B0J0
Abstract: LAVDH msu1 12-2 PMC-2021098
Text: 5: 03 AM TUPP 2488 ASSP Telecom Standard Product Data Sheet Released es da y, 09 Oc to TUPP™ 2488 be r, 20 07 04 :2 PM5364 Data Sheet Released Issue No. 7: August 2004 Do wn lo ad ed by IH S Pa r ts Ma na g em en tI nc .o fI HS IN C on Tu SONET/SDH Tributary Unit Payload
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PMC-2011334,
PM5364
B0J0
LAVDH
msu1 12-2
PMC-2021098
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RX110f
Abstract: p85 smd smd 125F 16V 1206R FHT100-16F P67-P69 RH6150 RU110F FSMD1206 RG300F
Text: CONTENTS I- OVERVIEW COMPANY PROFILE P.1 FUZETEC PRODUCT FAMILY P.1 SAFETY, QUALITY AND CUSTOMER SATISFACTION P.1 TECHNOLOGY NICHE P.1 II- FUNDAMENTAL HOW DOES THE RESETTABLE FUSE WORK P.2 TRIP CURRENT, HOLD CURRENT AND THERMAL DERATING P.2 III- PRODUCT
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FRX90V
FSMD2920
FSMD1812
FSMD1210
FSMD1206
FSMD0805
RX110f
p85 smd
smd 125F 16V
1206R
FHT100-16F
P67-P69
RH6150
RU110F
FSMD1206
RG300F
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RV55F
Abstract: RX110F TL 650 ht FRX90V 1206R 93AE 93AG MICROSMDC bimetal fuse FSMD010-1206
Text: CONTENTS I- OVERVIEW COMPANY PROFILE FUZETEC PRODUCT FAMILY SAFETY, QUALITY AND CUSTOMER SATISFACTION TECHNOLOGY NICHE II- FUNDAMENTAL HOW DOES THE RESETTABLE FUSE WORK TRIP CURRENT, HOLD CURRENT AND THERMAL DERATING III- PRODUCT PRODUCT SUMMARY FRX FRK
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FRX90V
FSMD2920
FSMD1812
FSMD1210
FSMD1206
FSMD0805
RV55F
RX110F
TL 650 ht
FRX90V
1206R
93AE
93AG
MICROSMDC
bimetal fuse
FSMD010-1206
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LVDS 51 connector
Abstract: PLL130-01
Text: Preliminary for proposal PLL130-01 High Speed Buffer for LVDS and PECL FEATURES Selectable PECL or LVDS outputs Single AC coupled input 100mV swing . Input range from DC to 1.3 GHz. Output Enable selector. 3.3V operation. Available in 16-Pin (SOIC or TSSOP).
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PLL130-01
100mV
16-Pin
PLL130-01
LVDS 51 connector
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13001 s bd
Abstract: 5310N
Text: g •Noissiwa^d N 3 in a M in o H iiM a 3 sn 3a i o n a in o H S o n v a 3 iv a o d d o o N i X310W 01 A dV13 IH d0 ad S I 1VH1 N O UVNdOdNI SN IV1N03 0NIMVHQ SIH1 3Z IS ZOO-22259-aS ‘ON 133HS _ 'ON ONIMydQ ‘ON lV Id 3 1 V N X 3 1 0 IA I
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P20-N3
X310W
IV1N03
133HS
ZOO-22259-aS
310V1
33NVH
9U/UI/V003
03r0U
9U/UU/7003
13001 s bd
5310N
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13001 LZ
Abstract: SR 13001 PA 13001
Text: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh
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AS4VC1M16E5
42-pin
44/50-pin
AS4VC1M16E5-50JC
AS4VC1M16E5-50TC
AS4VC1M16E5-60JC
AS4VC1M16E5-60TC
13001 LZ
SR 13001
PA 13001
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7006C
Abstract: TOA8
Text: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB814260A
16-bit
16-bits
MB814260A-70/-80/-10
7006C
TOA8
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICOND UCT OR INC bTE D • b l l l S M 11! DDÜTTbö 7ÖT ■ MRN M ir D H M 1 semiconductor inc. MT4C16256/7 256K X 16 DRAM 2 5 6 K X 16 DRAM DRAM FAST PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C16256/7
512-cycle
MT4C16257
MT4C162S6/7
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MT4C16256DJ-7
Abstract: No abstract text available
Text: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*
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256Kx
16DRAM
512-cycle
MT4C16257
MT4C16256/7
CYCLE24
MT4CI82S4/7
1QT94
QD1111D
MT4C16256DJ-7
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MT4C16270DJ-7
Abstract: No abstract text available
Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C16270
512-cycle
MT4C16270DJ-7
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Untitled
Abstract: No abstract text available
Text: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE
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MT4C16256/7/8/9
40-Pin
C1993
MT4C162S6/7/V9
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Untitled
Abstract: No abstract text available
Text: M ICRON SEM ICONDUCTOR INC b 'iE D m b i l l 5 HT G D G cì cì f i 3 B i MRN MT4C16256/7 L 256K X 16 DRAM MICRON I TTh SEPiCO ND'J CIO FiU JC. 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages
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MT4C16256/7
512-cycle
MT4C16257
MT4C162Se/7L
MT4C162SOTL
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MB81417
Abstract: marking 10-16
Text: FEB i 6 1993 August 1992 Edition 2.0A fu J it su — DATASHEET MB814170A-70/-80/-10 CMOS 256K x 16 Bits Fast Page Mode Dynamic RAM The Fujitsu M B 814170A is a fully decoded C M O S Dynamic RAM D R A M that contains 4 ,1 9 4 ,3 0 4 memory cells accessible in 16- or 8-bit increments. The M B 814 1 70A features a
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MB814170A-70/-80/-10
14170A
MB81417
marking 10-16
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Untitled
Abstract: No abstract text available
Text: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions
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256KX16DRAM
MT4C16257/9
MT4C16258/9
512-cyde
MT4C16256/7/8/9
MT4C1C25OTV9L
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Untitled
Abstract: No abstract text available
Text: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*
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MT4C16256/7/8/9
512-cycle
MT4C16257/9
MT4C16258/9
Tim93
MT4C162SS/7/I/9
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Untitled
Abstract: No abstract text available
Text: m ' i PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process
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MT4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cyde
500mW
MT4C162S6/7/W
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve
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256KX
16-bit
HY51V4260B
400mil
40pin
40/44pin
1AC26-00-MAY94
4b75Gflfl
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Untitled
Abstract: No abstract text available
Text: MOTOROLA H SEMICONDUCTOR TECHNICAL DATA MC54/74HC4514 1 -o f-1 6 D e c o d e r/D e m u ltip le x e r w ith A dd ress Latch High-Performance Silicon-Gate CMOS The MC54/74HC4514 is identical in pinout to the MC14514B metal-gate CMOS device. The device inputs are compatible w ith standard CMOS outputs; w ith pullup
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MC54/74HC4514
MC14514B
T00-02FF
0300-03FF
0400-04FF
0500-05FF
0600-06FF
0700-07F
0800-08FF
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13002
Abstract: HB 541 X810 MIL-T-10727 c s x 13001 H 08
Text: -f l O — no - - sqs Series 800 Vert¡sockets" Vertical Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of Vertisockets for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc.
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94-HB
QQ-B-750.
13002
HB 541
X810
MIL-T-10727
c s x 13001 H 08
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MT4C16257
Abstract: MT4C16256DJ-7 MT4C1625
Text: ADVANCE M T4C 16256/7/8/9 L 256K X 16 DRAM M IC R O N DRAM 256K x 16 DRAM g LOW POWER, EXTENDED REFRESH < FEATURES • Industry standard xl6 pinouts, tim ing, functions and packages • High-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply
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MT4C16257/9
MT4C16258/9
40-Pin
MT4C16256/7fe/9
T4C16256
MT4C16256/7r
MT4C16257
MT4C16256DJ-7
MT4C1625
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Untitled
Abstract: No abstract text available
Text: RPR 1 1993 PRELIMINARY M IC P D N I 1 IW = ! » T M T 4 0 1 6 2 5 6 /7/8 /9 S 2 5 6 K X 16 W ID E D R A M WIDE DRAM 256K x 16 DRAM FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc I 1 DQ1 I 2 D 02 [ 3 DQ3 [ 4 DQ4 C S Vcc DQ5 DQ6 DQ7 DOS
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40-Pin
l62S6tf/fl/9
4C16256/7/8/9
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Untitled
Abstract: No abstract text available
Text: E N - 0 2 J O 9 7 MX J- 54 g0S°b0Q-b6gl s-as^ t75-PXlA| A60)r30-N 3 a "NOISSINddd N d llld M in O H U M OdSn 39 ION OinOHS ONV OdlVdOddOONI X310IAI 01 A d V ld ld dO dd SI 1VH1 NOIlVWdOdNI SNIV1N00 ONIMVdO SIH1 3ZIS G JO G t70 0 —t7GoI S _OS 11VH3 X d lO H
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t75-PXlA|
r30-N
X310IAI
SNIV1N00
11VH3
3SIA39
N0IS30
1N33V
3NI0N09
0NI113S0lA
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Untitled
Abstract: No abstract text available
Text: AMP Kabelschuhe und Verbinder Verarbeitungswerkzeuge, Service-Sortimente AMP Terminals and Splices Application Tooling, Service Kits AM P AMP PIDG AMP P/DG Ringzungen, 0,1—6,6 mm2 Ring Tongues, 0.1—6.6 mm2 Kabelschuhmaterial: Cu, verzinnt Terminal Material:
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Bolzenloch-78.
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PK-85513-001
Abstract: No abstract text available
Text: 10 C irc u it 1 NOTES; 1- MATERIAL: - HOUSING: POLYAMIDE 46 FIBER GLASS FILLED UL 94-VO , COLOR BLACK. - TERMINAL: PHOSPHOR BRONZE PLATED WITH: 0 . 0 0 1 2 7 /.0 0 0 0 5 0 MIN GOLD IN CONTACT AREA, 0 . 0 0 1 9 0 /.0 0 0 0 7 5 MIN PURE TIN IN T A IL AREA, BOTH OVER 0 . 0 0 1 2 7 /.0 0 0 0 5 0
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94-VO
SD-85513-001
PK-85513-001
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