IRG41BC20W
Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles
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O-220
IR2130
230VAC
IR2133
460VAC
IR2233
IR2137/IR2171
IRG41BC20W
IRG41BC20UD
Drive circuit for IGBT using IR2130
IR2184 application notes
IR2110 driver CIRCUIT FOR INVERTERS
DC MOTOR SPEED CONTROL USING IGBT
IRG41BC30W
IR2181 application notes
IR2103 bldc driver
1KW dc motor
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IRG4BC20KD
Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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OCR Scan
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IRG4BC20KD
T0220A8
IRG4BC20KD
IGBT IRG4BC20KD
IRGBC20KD2
transistor iqr
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IRG4BC20KD-S
Abstract: No abstract text available
Text: PD-9.1598 International IGR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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OCR Scan
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IRG4BC20KD-S
IRG4BC20KD-S
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Untitled
Abstract: No abstract text available
Text: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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OCR Scan
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IRG4BC20KD
T0-220AB
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Untitled
Abstract: No abstract text available
Text: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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OCR Scan
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IRG4BC20KD-S
5SM52
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IRGBC20KD2
Abstract: IRGBC20MD2
Text: PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4BC20KDPbF
O-220AB
IRGBC20KD2
IRGBC20MD2
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IRG4BC20
Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
Text: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91599A
IRG4BC20KD
O-220AB
IRG4BC20
IRG4BC20KD
IRGBC20KD2
IRGBC20MD2
motor IG 2200 19 00001
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Untitled
Abstract: No abstract text available
Text: PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4BC20KDPbF
O-220AB
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motor IG 2200 19 X 000 15 R
Abstract: motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
motor IG 2200 19 X 000 15 R
motor IG 2200 53 X 000 41 R
ic c 838
IRG4BC20KD
IRG4BC20KD-S
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
motor IG 2200 19 00001
227V
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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IGBT IRG4BC20KD
Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 IRG4BC20K
Text: PD -9.1599 IRG4BC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4BC20KD
O-220AB
IGBT IRG4BC20KD
IRG4BC20KD
IRGBC20KD2
IRGBC20MD2
IRG4BC20K
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Untitled
Abstract: No abstract text available
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -9.1598 PRELIMINARY IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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IRG4BC20
Abstract: irgbc20kd IRG4BC20KD IRGBC20KD2 IRGBC20MD2 irg4bc IGBT IRG4BC20KD
Text: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91599A
IRG4BC20KD
O-220AB
IRG4BC20
irgbc20kd
IRG4BC20KD
IRGBC20KD2
IRGBC20MD2
irg4bc
IGBT IRG4BC20KD
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AN-994
Abstract: IRGBC20KD2-S IRGBC20MD2-S
Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
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IRG4BC20KD-SPbF
EIA-418.
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
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Untitled
Abstract: No abstract text available
Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
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IRG4BC20KD-SPbF
EIA-418.
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AN-994
Abstract: IRGBC20KD2-S IRGBC20MD2-S 10 DC IR Bridge
Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter
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IRG4BC20KD-SPbF
EIA-418.
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
10 DC IR Bridge
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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OCR Scan
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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OCR Scan
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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vfd B DELTA
Abstract: operation of IGBT in inverter section delta electronics VFD cree Sic IRG4BC20KD CSD10060 EN61800-3 HFA15TB60 IRG4BC20K inverter vfd B DELTA
Text: By Michael O’Neill, Applications Engineer, Cree Inc., Durham, N.C. Silicon carbide enables the creation of nearperfect high-voltage diodes whose speed and power-handling capabilities open new applications in variable-frequency motor drives. This will lead to higher density power modules that
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PCIM-26-CU
vfd B DELTA
operation of IGBT in inverter section
delta electronics VFD
cree Sic
IRG4BC20KD
CSD10060
EN61800-3
HFA15TB60
IRG4BC20K
inverter vfd B DELTA
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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GA400GD25S
Abstract: ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137
Text: +200 / -460 mA 12.5 - 25V 12.5 - 25V with with UnderUnderVoltage Voltage Lockout Lockout UP TO 1200V — IR2233 / 2235 10 - 25V 10 - 25V with with +200 / -420 UVLO UVLO mA 12 - 25V 12 - 25V with with UVLO UVLO Output Swing = Supply Voltage Output Swing = Supply
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IR2108
IRFBA1404P
IRF1404S
IRF1404
IRF1404L
IRF1405S
IRF1405
IRF1405L
IRFP2907
IRFPS3810
GA400GD25S
ir2184 circuit
IR211X
IRG4BC30KD-S
IR2213 DIE
600V 20A 50KHz
IR2136
GA250
IRFP3415
IR2137
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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