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    IGBT IGNITION Search Results

    IGBT IGNITION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT IGNITION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


    Original     		PDF FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor

    8201NG

    Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G

    8204NG

    Abstract: GB8204N NGB8204N NGB8204NT4 NGB8204NT4G
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D 8204NG GB8204N NGB8204N NGB8204NT4 NGB8204NT4G

    8205NG

    Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G

    B8204

    Abstract: NGB8204N NGB8204NT4
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D B8204 NGB8204N NGB8204NT4

    8201NG

    Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4

    MGP20N40CL

    Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
    Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		PDF MGP20N40CL/D MGP20N40CL MGP20N40CL/D* MGP20N40CL NT 407 F TRANSISTOR TO 220 MGP20N40CL-D

    8245NG

    Abstract: No abstract text available
    Text: NGB8245N Ignition IGBT 20 Amp, 450 Volt, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8245N NGB8245N/D 8245NG

    NT 407 F TRANSISTOR TO 220

    Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		PDF MGP20N40CL/D MGP20N40CL NT 407 F TRANSISTOR TO 220 MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
    Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		PDF MGP20N14CL/D MGP20N14CL MGP20N14CL/D* NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220

    MGP20N40CL

    Abstract: NT 407 F power transistor NT 407 F TRANSISTOR TO 220
    Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		PDF MGP20N40CL/D MGP20N40CL MGP20N40CL NT 407 F power transistor NT 407 F TRANSISTOR TO 220

    NT 407 F TRANSISTOR TO 220

    Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
    Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N14CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		PDF MGP20N14CL/D MGP20N14CL NT 407 F TRANSISTOR TO 220 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition

    8204NG

    Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
    Text: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8204N NGB8204N/D 8204NG GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG

    NGD 8205NG

    Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G

    NGB8202NT4G

    Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D NGB8202NT4G NGB8202AN NGB8202ANT4G NGB8202N NGB8202A

    18n40b

    Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
    Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D

    8201N

    Abstract: NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4

    B8202N

    Abstract: B8202 B8-202 Direct fuel injection ignition IGBT GB8202N
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N B8202N B8202 B8-202 Direct fuel injection ignition IGBT GB8202N

    N40B

    Abstract: G18N40B g18n40
    Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD18N40CLBT4 NGD18N40CLB/D N40B G18N40B g18n40

    NGD8205AN

    Abstract: NGD8205A
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N, NGD8205AN NGD8205N/D NGD8205A

    NGD8201N

    Abstract: 8201x NGD8201AN 8201xg NGD8201ANT4G
    Text: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N, NGD8201AN NGD8201N/D NGD8201N 8201x 8201xg NGD8201ANT4G

    Untitled

    Abstract: No abstract text available
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    OCR Scan     		PDF MGP20N35CL -220A

    GP20N

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)


    OCR Scan     		PDF MGP20N40CL 21A-09 O-220AB GP20N