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    IGBT GT30J122 Search Results

    IGBT GT30J122 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT GT30J122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122

    IGBT GT30J122

    Abstract: GT30J122 GT30*122 IGBT TEST toshiba gt30j122
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 IGBT GT30J122 GT30J122 GT30*122 IGBT TEST toshiba gt30j122

    GT30*122

    Abstract: GT30J122 IGBT GT30J122
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 2-16F1A GT30*122 GT30J122 IGBT GT30J122

    GT30J122

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 GT30J122

    GT30*122

    Abstract: GT30J122 IGBT GT30J122 toshiba gt30j122
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 GT30*122 GT30J122 IGBT GT30J122 toshiba gt30j122

    GT30J122

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT30J122 THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement−Mode • High Speed: tf = 0.25µs Typ. (IC = 50A) • Low Saturation Voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 GT30J122

    Untitled

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT30J122 THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement−Mode • High Speed: tf = 0.25µs Typ. (IC = 50A) • Low Saturation Voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 2-16F1A

    GT30J122A

    Abstract: gt30j1
    Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT30J122A GT30J122A gt30j1

    Untitled

    Abstract: No abstract text available
    Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT30J122A

    Untitled

    Abstract: No abstract text available
    Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT30J122A

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30J124

    Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。


    Original     		PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    GT30J122

    Abstract: toshiba gt30j122 IC301 GT30*122
    Text: GT30J122 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J122 ○ 第 4 世代 ○ 電流共振インバータスイッチング用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。 : tf = 0.25 s 標準 (IC = 50 A)


    Original     		PDF GT30J122 2-16F1A 20070701-JA GT30J122 toshiba gt30j122 IC301 GT30*122

    induction cooker circuit diagram

    Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
    Text: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3


    Original     		PDF SCE0013D induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker

    TC7600FNG

    Abstract: TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D 2SK3767 TB6674 fag 23 mg TB6575FNG
    Text: システムカタログ 2009-9 システムカタログ 家電・住設編 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / IH 炊飯ジャー Home Appliances 冷蔵庫 全自動洗濯機 エアコン 食器洗い乾燥機 •CONTENTS


    Original     		PDF TMPM370/TMP19A71 GT30J122 DC1I583 SCJ0013D SCJ0013C TC7600FNG TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D 2SK3767 TB6674 fag 23 mg TB6575FNG

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    microtek inverter service manual

    Abstract: tc94a92fg TC94A93MFG microtek inverter circuit TB2926chq equivalent TC94A99FG TC94A93 tb2929hq TC7600FNG TC9260AFG
    Text: 2010-8 PRODUCT GUIDE Microcomputers h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Toshiba Microcomputers Protecting the global environment is all-important, and more and more electronic appliances are being designed with this end in view.


    Original     		PDF BCE0021H microtek inverter service manual tc94a92fg TC94A93MFG microtek inverter circuit TB2926chq equivalent TC94A99FG TC94A93 tb2929hq TC7600FNG TC9260AFG

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    TB6584FNG

    Abstract: TB9061FNG TC7600FNG TB9056FNG TB6560AHQ TB62214 tmp89fw24 tb6560ahq application tb6572 TB62208FNG
    Text: 2010-3 SYSTEM CATALOG Motor Solutions Guide h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Toshiba’s Semiconductors for Motor Control Interface Driver Controller Many of the digital mobile handsets, small office equipment and toy robots are battery-powered,


    Original     		PDF SCE0020C TB6584FNG TB9061FNG TC7600FNG TB9056FNG TB6560AHQ TB62214 tmp89fw24 tb6560ahq application tb6572 TB62208FNG

    TB6584FNG

    Abstract: TK5A50D5 TB9056FNG TC7600FNG TB9061FNG TK7A50D5 TB9061 TB9067FNG TB62214 TB6560AHQ
    Text: システムカタログ 2010-3 システムカタログ モータ用半導体 h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / ドライバ 東芝のモータ用半導体 イ ン タ フ ェ ー ス コントローラ プリドライブ 回路


    Original     		PDF QFP100 LQFP44 DIP16 SSOP24 LQFP48 LQFP100 HSIP10 HZIP25 DIP20 SSOP30 TB6584FNG TK5A50D5 TB9056FNG TC7600FNG TB9061FNG TK7A50D5 TB9061 TB9067FNG TB62214 TB6560AHQ