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    GT30J1 Search Results

    GT30J1 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
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    GT30J1 Price and Stock

    Toshiba America Electronic Components GT30J121(Q)

    IGBT 600V 30A 170W TO3PN
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    DigiKey GT30J121(Q) Tray 3,137 1
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    Avnet Americas GT30J121(Q) Tube 18 Weeks 100
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    Mouser Electronics GT30J121(Q) 128
    • 1 $3.17
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    Verical GT30J121(Q) 200 100
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    TME GT30J121(Q) 64 1
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    Toshiba America Electronic Components GT30J110SRA,S1E(S

    Bipolar Transistor (BJT)
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    Chip1Stop GT30J110SRA,S1E(S Tube 10
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    GT30J1 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT30J101 Toshiba IGBT Chip, N Channel, 600V, 2-16C1C, 3-Pin Original PDF
    GT30J101 Toshiba Insulated Gate Bipolar Transistor - Silicon N Channel IGBT Original PDF
    GT30J101 Toshiba Discrete IGBTs Original PDF
    GT30J101 Toshiba Discrete IGBTs Original PDF
    GT30J121 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT30J121 Toshiba Discrete IGBTs Original PDF
    GT30J121 Toshiba High-Speed IGBTs Original PDF
    GT30J121(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 170W TO3PN Original PDF
    GT30J122 Toshiba Discrete IGBTs Original PDF
    GT30J122 Toshiba SILICON N CHANNEL IGBT Original PDF
    GT30J122 Toshiba Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(N)IS; Number Of Pins: 3; No Of Circuits: 1; Comments: Low saturation voltage type; V_CES (V): (max 600) Original PDF
    GT30J122A Toshiba GT30J122A - Discrete IGBTs, GT30J122A Original PDF
    GT30J126 Toshiba GT30J126 - TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, LEAD FREE, 2-16F1A, 3 PIN, Insulated Gate BIP Transistor Original PDF

    GT30J1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)


    Original     		PDF GT30J121 50kHz Tj125

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT30J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 2-16C1C GT30J101 GT30J301

    GT30J126

    Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
    Text: GT30J126 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT30J126 2-16F1A 20070701-JA GT30J126 GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 GT30J101 GT30J301

    GT30J121

    Abstract: GT30J324
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 GT30J121 GT30J324

    IGBT GT30J121

    Abstract: GT30J121 GT30J324
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 IGBT GT30J121 GT30J121 GT30J324

    IGBT GT30J122

    Abstract: GT30J122 GT30*122 IGBT TEST toshiba gt30j122
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 IGBT GT30J122 GT30J122 GT30*122 IGBT TEST toshiba gt30j122

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 2-16C1C GT30J101 GT30J301

    GT30J101

    Abstract: Toshibagt30j101
    Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 2-16C1C GT30J101 Toshibagt30j101

    GT30*122

    Abstract: GT30J122 IGBT GT30J122
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 2-16F1A GT30*122 GT30J122 IGBT GT30J122

    GT30J122

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 GT30J122

    GT30J101

    Abstract: GT30J301 IC-8100
    Text: GT30J101 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J101 ○ 大電力スイッチング用 単位: mm • 第 3 世代品です。 • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。 : tf = 0.30 s 最大 (IC = 30 A)


    Original     		PDF GT30J101 2-16C1C 20070701-JA GT30J101 GT30J301 IC-8100

    Untitled

    Abstract: No abstract text available
    Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT30J122A

    GT30J121

    Abstract: GT30J324 ic604 IGBT GT30J121
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 GT30J121 GT30J324 ic604 IGBT GT30J121

    GT30J122A

    Abstract: gt30j1
    Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT30J122A GT30J122A gt30j1

    Untitled

    Abstract: No abstract text available
    Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)


    Original     		PDF GT30J126

    GT30J324

    Abstract: GT30J126
    Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)


    Original     		PDF GT30J126 GT30J324 GT30J126

    GT30J122

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT30J122 THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement−Mode • High Speed: tf = 0.25µs Typ. (IC = 50A) • Low Saturation Voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 GT30J122

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 000707EAA1 GT30J101 GT30J301

    Untitled

    Abstract: No abstract text available
    Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT30J122A

    Untitled

    Abstract: No abstract text available
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121

    Untitled

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT30J122 THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement−Mode • High Speed: tf = 0.25µs Typ. (IC = 50A) • Low Saturation Voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122 2-16F1A

    Untitled

    Abstract: No abstract text available
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121