Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT CHIP 400V 300A Search Results

    IGBT CHIP 400V 300A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IGBT CHIP 400V 300A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4MBI300VG-120R-50

    Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
    Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure


    Original     		PDF 4MBI300VG-120R-50 4MBI300VG-120R-50 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    CM300DX-24A

    Abstract: CM300DX
    Text: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE CM300DX-24A ¡IC . 300A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /


    Original     		PDF CM300DX-24A 25EDANCE 066K/W 12K/W CM300DX-24A CM300DX

    600V 300A igbt dc to dc power supply

    Abstract: CM300DX
    Text: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE CM300DX-24A ¡IC . 300A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /


    Original     		PDF CM300DX-24A 600V 300A igbt dc to dc power supply CM300DX

    cm300dy-24a

    Abstract: 300A 1200V IGBT MITSUBISHI
    Text: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM300DY-24A CM300 cm300dy-24a 300A 1200V IGBT MITSUBISHI

    300N60B3

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60B3 IXXX300N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 300A 1.6V 95ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


    Original     		PDF 10-30kHz IXXK300N60B3 IXXX300N60B3 IC110 O-264 062in. O-264) O-264 PLUS247 300N60B3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60C3 IXXX300N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 300A 2.0V 82ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


    Original     		PDF 20-60kHz IXXK300N60C3 IXXX300N60C3 IC110 O-264 062in. O-264) O-264 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM300DY-24A

    CM300DY-24A

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM300DY-24A CM300DY-24A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM300DY-24A

    MKP capacitor

    Abstract: SKIIP APPLICATION 803GD061-3DUW
    Text: SKiiP 803GD061-3DUW I. Power section 1 * SKiiP803GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin


    Original     		PDF 803GD061-3DUW SKiiP803GB061CT 803GD061-3DUW MKP capacitor SKIIP APPLICATION

    SKiiP613GB061CT

    Abstract: skIIP613GB 613GD061-3DUL
    Text: SKiiP 613GD061-3DUL I. Power section 1 * SKiiP613GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin


    Original     		PDF 613GD061-3DUL SKiiP613GB061CT 613GD061-3DUL skIIP613GB

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: VCES = 600V IC25 = 400A VCE sat ≤ 1.25V IXGN400N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN400N60A3 OT-227B, E153432 IC110 400N60A3 7-10-08-C

    IXGN400N60A3

    Abstract: No abstract text available
    Text: IXGN400N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN400N60A3 OT-227B, E153432 IC110 400N60A3 7-10-08-C IXGN400N60A3

    IGBT chip 400V 300A

    Abstract: No abstract text available
    Text: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 CM300DC-24NFM Dual IGBT NFM-Series Module 300 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101


    Original     		PDF CM300DC-24NFM Amperes/1200 IGBT chip 400V 300A

    semikron skiip 32

    Abstract: semikron skiip 400 gb 302GD061-359CTV
    Text: SKiiP 302GD061-359CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


    Original     		PDF 302GD061-359CTV semikron skiip 32 semikron skiip 400 gb 302GD061-359CTV

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V IGBT GenX4TM MMIX1X340N65B4 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = = IC90 VCE sat  tfi(typ) = 650V 295A 1.7V 80ns C G E ymbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF MMIX1X340N65B4 10-30kHz 340N65B4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 650V IGBT GenX4TM IXXK200N65B4 IXXX200N65B4 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 200A 1.7V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXK200N65B4 IXXX200N65B4 IC110 10-30kHz O-264 200N65B4 4-14-A

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 600V XPTTM IGBT GenX3TM IXXH150N60C3 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXXH150N60C3 IC110 20-60kHz O-247 150N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 600V XPTTM IGBT GenX3TM IXYN150N60B3 Extreme Light Punch through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXYN150N60B3 10-30kHz IC110 114ns OT-227B, E153432 150N60B3

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    zener DIODE A112

    Abstract: DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR
    Text: FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES APPLICATION MANUAL 1 REH983 CONTENTS Chapter 1 Features 1.1 IGBT-IPM Characteristics. 3 1.2 R-IPM Characteristics. 4


    Original     		PDF REH983 zener DIODE A112 DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR