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    IGBT 900V 50A Search Results

    IGBT 900V 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 900V 50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode schottky 600v

    Abstract: phase shift resistance welding APT43GA90B MIC4452 .47 j 100
    Text: APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90B diode schottky 600v phase shift resistance welding APT43GA90B MIC4452 .47 j 100

    Untitled

    Abstract: No abstract text available
    Text: APT50GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP90B O-247 APT50GP90B T0-247

    APT25GP90BDF1

    Abstract: T0-247 T0247 package NF 833
    Text: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247 APT25GP90BDF1 T0-247 T0247 package NF 833

    APT43GA90B

    Abstract: MIC4452
    Text: APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90B APT43GA90B MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT50GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP90B2DF2 APT50GP90B2DF2

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90B APT43GA90S Ver81

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90B APT43GA90S

    diode schottky 600v

    Abstract: No abstract text available
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90BD30 APT43GA90SD30 diode schottky 600v

    APT43GA90B

    Abstract: APT43GA90S MIC4452 117 IC 100-C43
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90B APT43GA90S APT43GA90B APT43GA90S MIC4452 117 IC 100-C43

    Untitled

    Abstract: No abstract text available
    Text: APT50GP90JDF2 900V POWER MOS 7 IGBT E E ® G The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP90JDF2 APT50GP90JDF2

    Untitled

    Abstract: No abstract text available
    Text: APT50GP90J 900V POWER MOS 7 IGBT 27 2 T- C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP90J APT50GP90J

    APT43GA90B

    Abstract: APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky
    Text: APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90BD30 APT43GA90B APT43GA90B APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky

    D-6020

    Abstract: APT25GP90B T0-247
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247 D-6020 APT25GP90B T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    APT25GP90BDF1

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247 APT25GP90BDF1

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90BD30 APT43GA90SD30 TYP11

    RECTIFIER DIODE 1000A schottky

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90BD30 APT43GA90SD30 TYPI67 RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90BDF1 O-247

    RECTIFIER DIODE 1000A schottky

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90B APT43GA90BD30 MIC4452
    Text: APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT43GA90BD30 APT43GA90B RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90B APT43GA90BD30 MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT25GP90B O-247

    IC 7476

    Abstract: 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet APT25GP90BDQ1
    Text: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G* Volta10) IC 7476 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet