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    APT43GA90B Search Results

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    APT43GA90B Price and Stock

    Microchip Technology Inc APT43GA90B

    IGBT PT 900V 78A TO247
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    DigiKey APT43GA90B Tube 81 1
    • 1 $6.31
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    Avnet Americas APT43GA90B Tube 26 Weeks 90
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    Mouser Electronics APT43GA90B
    • 1 $6.31
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    Newark APT43GA90B Bulk 90
    • 1 $6.31
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    Future Electronics APT43GA90B 90
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    Microchip Technology Inc APT43GA90B Tube 26 Weeks
    • 1 $6.31
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    Onlinecomponents.com APT43GA90B
    • 1 -
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    TME APT43GA90B 1
    • 1 $9.14
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    NAC APT43GA90B Tube 60
    • 1 $6.03
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    Master Electronics APT43GA90B
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    Microchip Technology Inc APT43GA90BD30

    IGBT PT 900V 78A TO247
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    DigiKey APT43GA90BD30 Tube 80 1
    • 1 $7.95
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    Avnet Americas APT43GA90BD30 Tube 26 Weeks 70
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    Mouser Electronics APT43GA90BD30
    • 1 $7.95
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    Newark APT43GA90BD30 Bulk 70
    • 1 $7.95
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    Microchip Technology Inc APT43GA90BD30 Tube 26 Weeks
    • 1 $7.95
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    TME APT43GA90BD30 70 1
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    NAC APT43GA90BD30 Tube 48
    • 1 $7.57
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    Richardson RFPD APT43GA90BD30 70
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    Master Electronics APT43GA90BD30
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    APT43GA90B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT43GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original PDF
    APT43GA90BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original PDF

    APT43GA90B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S PDF

    diode schottky 600v

    Abstract: No abstract text available
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90SD30 diode schottky 600v PDF

    APT43GA90B

    Abstract: APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky
    Text: APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90B APT43GA90B APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S Ver81 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90SD30 TYP11 PDF

    RECTIFIER DIODE 1000A schottky

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30
    Text: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90SD30 TYPI67 RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30 PDF

    RECTIFIER DIODE 1000A schottky

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90B APT43GA90BD30 MIC4452
    Text: APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90BD30 APT43GA90B RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90B APT43GA90BD30 MIC4452 PDF

    APT43GA90B

    Abstract: MIC4452
    Text: APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90B MIC4452 PDF

    APT43GA90B

    Abstract: APT43GA90S MIC4452 117 IC 100-C43
    Text: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B APT43GA90S APT43GA90B APT43GA90S MIC4452 117 IC 100-C43 PDF

    diode schottky 600v

    Abstract: phase shift resistance welding APT43GA90B MIC4452 .47 j 100
    Text: APT43GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT43GA90B diode schottky 600v phase shift resistance welding APT43GA90B MIC4452 .47 j 100 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 PDF