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Untitled Abstract: No abstract text available Text: APT50GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	APT50GP90B2DF2 APT50GP90B2DF2	PDF

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: APT50GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

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