MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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20kHz
MITSUBISHI CM400
MITSUBISHI CM300
H BRIDGE inverters circuit diagram using igbt
NPN/transistor NEC K 2500
HALF BRIDGE NPN DARLINGTON POWER MODULE
ups circuit diagram using igbt
IGBT h-series application note
CM30 igbt
CM400
MITSUBISHI cm50-24h
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) IGBT IC=100A (Tc=25C) IGBT tf=80ns typ.
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ENA2308A
NGTB30N60L2WG
O-247-3L
A2308-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications
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ENA2308B
NGTB30N60L2WG
A2308-8/8
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GC 72 smd diode
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GC 72 smd diode
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GC 72 smd diode
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
GC 72 smd diode
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ultrafast igbt
Abstract: 50mt060ulstapbf GC smd diode 94540
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
18-Jul-08
ultrafast igbt
50mt060ulstapbf
GC smd diode
94540
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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IRG4PH40UD2-EP
Abstract: 035H IRGP30B120KD-E
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
IRG4PH40UD2-EP
035H
IRGP30B120KD-E
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induction cooking
Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
induction cooking
035H
IRG4PH40UD2-EP
IRGP30B120KD-E
TO247AD package
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diod t4
Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051D
GA400TD25S
10kHz
diod t4
p j 85 diod
GA400TD25S
t4 diod
INT-A-PAK Dual weight
diod 800A
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA200TS60UPbF
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051D
GA400TD25S
10kHz
85ded
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT8GT60KR
O-220
150KHz
APT8GT60KR
Continu15V
66VCES
MIL-STD-750
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gFE smd diode
Abstract: 50MT060ULSTAPBF
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996)
18-Jul-08
gFE smd diode
50MT060ULSTAPBF
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Untitled
Abstract: No abstract text available
Text: APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • • •
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APT33GF120BR
O-247
20KHz
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GA400TD60U
Abstract: No abstract text available
Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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GA400TD60U
25imeters
GA400TD60U
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2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G070-060D
2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
DS34C87
LIN opto isolator
SFH6186-4
SPM6G070-060D
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1515G
Abstract: GA250TD120U
Text: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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0054A
GA250TD120U
10kHz
1515G
GA250TD120U
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Untitled
Abstract: No abstract text available
Text: APT15GT60BR APT15GT60BR 600V 30A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT15GT60BR
O-247
150KHz
APT15GT60BR
T0-247
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PR30A
Abstract: APT15GT60BRD
Text: APT15GT60BRD 600V 30A Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers
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APT15GT60BRD
O-247
150KHz
O-247
PR30A
APT15GT60BRD
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA200TS60UPbF
12-Mar-07
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