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    IGBT 50V Search Results

    IGBT 50V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 50V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.


    Original     		PDF ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications


    Original     		PDF ENA2308B NGTB30N60L2WG A2308-8/8

    GC 72 smd diode

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GC 72 smd diode

    GC 72 smd diode

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11 GC 72 smd diode

    Untitled

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    ultrafast igbt

    Abstract: 50mt060ulstapbf GC smd diode 94540
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 18-Jul-08 ultrafast igbt 50mt060ulstapbf GC smd diode 94540

    Untitled

    Abstract: No abstract text available
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits

    IRG4PH40UD2-EP

    Abstract: 035H IRGP30B120KD-E
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD IRG4PH40UD2-EP 035H IRGP30B120KD-E

    induction cooking

    Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD induction cooking 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package

    diod t4

    Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
    Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		PDF -50051D GA400TD25S 10kHz diod t4 p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA200TS60UPbF 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		PDF -50051D GA400TD25S 10kHz 85ded 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		PDF APT8GT60KR O-220 150KHz APT8GT60KR Continu15V 66VCES MIL-STD-750

    gFE smd diode

    Abstract: 50MT060ULSTAPBF
    Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses


    Original     		PDF 50MT060ULSTAPbF E78996) 18-Jul-08 gFE smd diode 50MT060ULSTAPBF

    Untitled

    Abstract: No abstract text available
    Text: APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • • •


    Original     		PDF APT33GF120BR O-247 20KHz

    GA400TD60U

    Abstract: No abstract text available
    Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF GA400TD60U 25imeters GA400TD60U

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

    Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original     		PDF SPM6G070-060D 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D

    1515G

    Abstract: GA250TD120U
    Text: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		PDF 0054A GA250TD120U 10kHz 1515G GA250TD120U

    Untitled

    Abstract: No abstract text available
    Text: APT15GT60BR APT15GT60BR 600V 30A Thunderbolt IGBT™ The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		PDF APT15GT60BR O-247 150KHz APT15GT60BR T0-247

    PR30A

    Abstract: APT15GT60BRD
    Text: APT15GT60BRD 600V 30A Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers


    Original     		PDF APT15GT60BRD O-247 150KHz O-247 PR30A APT15GT60BRD

    Untitled

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA200TS60UPbF 12-Mar-07