Untitled
Abstract: No abstract text available
Text: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter
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V23990-P629-L99-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXYH40N120B3D1
183ns
O-247
IF110
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYH40N120B3D1
IC110
183ns
O-247
IF110
062in.
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PDF
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Untitled
Abstract: No abstract text available
Text: APT40GR120B2DU30 APT40GR120B2DU30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 1200V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between
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APT40GR120B2DU30
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QR30
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
062in.
QR30
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IXYH40N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
062in.
IXYH40N120C3
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode MMIX1Y100N120C3H1 VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 3.5V 110ns C G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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MMIX1Y100N120C3H1
IC110
110ns
IF110
MMIX1Y100N120C3H1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120C3D1
O-247
IF110
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N120B3
IC110
183ns
O-247
062in.
40N120B3
A-C91)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH40N120B3
IC110
183ns
O-247
062in.
40N120B3
A-C91)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXYH40N120B3
183ns
O-247
40N120B3
A-C91)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N120B3D1
IC110
183ns
O-247
IF110
062in.
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PDF
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Untitled
Abstract: No abstract text available
Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-L59-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter
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V23990-P629-F73-PM
200V/40A
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Untitled
Abstract: No abstract text available
Text: July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction
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FGA25N120ANTD/FGA25N120ANTD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXYR50N120C3D1
ISOPLUS247TM
IF110
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IXYR50N120C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IF110
IXYR50N120C3D1
ISOPLUS247TM
IXYR50N120C3D1
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Untitled
Abstract: No abstract text available
Text: IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N120B3
IC110
183ns
O-247
40N120B3
A-C91)
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Untitled
Abstract: No abstract text available
Text: IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYH40N120C3D1
O-247
IF110
13/1030A,
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Ultra fast diode
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
062in.
Ultra fast diode
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN50N120C3H1 VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
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IXGN50N120C3H1
IC110
OT-227B,
E153432
IF110
50N120C3H1
3-01-10-A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXYH20N120C3D1
108ns
O-247
IF110
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ixgn50n120c3h1
Abstract: g50n IF110 g50n120c3
Text: Advance Technical Information IXGN50N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
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IXGN50N120C3H1
IC110
OT-227B,
E153432
IF110
50N120C3H1
3-01-10-A
ixgn50n120c3h1
g50n
IF110
g50n120c3
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IXGN82N120B3H1
Abstract: IXGN82N120 IF110 IXGN82N120B3H
Text: Advance Technical Information IXGN82N120B3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN82N120B3H1
IC110
OT-227B,
E153432
IF110
82N120B3H1
IXGN82N120B3H1
IXGN82N120
IF110
IXGN82N120B3H
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