IC A 3120 igbt drive
Abstract: IGBT 1200A half bridge inverter schematic Power IGBT full bridge Inverter IGBT 1500 volts igbt bridge switching power supply IGBT full bridge 1200 igbt 600V igbt inverter reference schematics PP1200D060
Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP1200D060 TM POW-R-PAK 1200A / 600V Half Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a
|
Original
|
PP1200D060
PP1200D060
IC A 3120 igbt drive
IGBT 1200A
half bridge inverter schematic
Power IGBT full bridge Inverter
IGBT 1500 volts
igbt bridge switching power supply
IGBT full bridge 1200
igbt 600V
igbt inverter reference schematics
|
PDF
|
24v 125A IGBT
Abstract: No abstract text available
Text: TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 PP1200D060 TM POW-R-PAK 1200A / 600V Half Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a
|
Original
|
PP1200D060
PP1200D060
24v 125A IGBT
|
PDF
|
2MBI1200U4G-120
Abstract: IGBT 1200A 600V
Text: / 2MBI1200U4G-120 IGBT Modules IGBT MODULE U series 1200V / 1200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier
|
Original
|
2MBI1200U4G-120
2MBI1200U4G-120
IGBT 1200A 600V
|
PDF
|
1MBI1200U4C-120
Abstract: 1mbi1200u 1MBI1200
Text: 1MBI1200U4C-120 IGBT Modules IGBT MODULE U series 1200V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
|
Original
|
1MBI1200U4C-120
1MBI1200U4C-120
1mbi1200u
1MBI1200
|
PDF
|
fast recovery diode 600v 1200A
Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
Text: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
|
Original
|
PDE-N1200GR12A-0
MBN1200GR12A
200A/1200V,
Weight1300g
fast recovery diode 600v 1200A
diode current 1200A
MBN1200GR12A
IGBT 1200A
PDE-N1200GR12A-0
IGBT 1200A 600V
|
PDF
|
hitachi igbt
Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
Text: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
|
Original
|
PDE-N1200GR12A-0
MBN1200GR12A
200A/1200V,
Weight1300g
hitachi igbt
IGBT 1200A
MBN1200GR12A
Hitachi DSA0047
|
PDF
|
AN4503
Abstract: AN4502 AN4505 GP1200FSS18
Text: GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module DS5260-3.1 January 2001 KEY PARAMETERS
|
Original
|
GP1200FSS18
DS5260-2
DS5260-3
GP1200FSS18
AN4503
AN4502
AN4505
|
PDF
|
BQ JN
Abstract: PHMB1200B12 IGBT G033
Text: TENTATIVE IGBT MODULE PHMB1200B12 Single 1200A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 1,200g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation
|
Original
|
PHMB1200B12
BQ JN
PHMB1200B12
IGBT G033
|
PDF
|
AN4503
Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
Text: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)
|
Original
|
GP1200FSM18
DS5410-1
GP1200FSM18
AN4503
AN4502
AN4505
AN4506
AN5000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.
|
Original
|
GP1200FSS12S
DS4547-1
190ns
840ns
|
PDF
|
IGBT G033
Abstract: CC60 IGBT 600V 1200A
Text: TENTATIVE IGBT MODULE PHMB1200B12 Single 1200A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation
|
Original
|
PHMB1200B12
IGBT G033
CC60
IGBT 600V 1200A
|
PDF
|
transistor 8929
Abstract: No abstract text available
Text: DIM1200FSS12-A000 Single Switch IGBT Module DS5834-1.0 March 2005 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23835) 1200V 2.2V 1200A 2400A Isolated Copper Baseplate
|
Original
|
DIM1200FSS12-A000
DS5834-1
LN23835)
DIM1200FSS12-A000
transistor 8929
|
PDF
|
723 ic internal diagram
Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
Text: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)
|
Original
|
GP1201FSS18
DS5411-1
GP1201FSS18
723 ic internal diagram
AN4502
AN4503
AN4505
AN4506
|
PDF
|
semikron snubber
Abstract: snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt
Text: SEMIKRPN innovation+ service U tf&i Now SEMIKRON introduces SKiiP SKiiP , a new compact technology for integrated intelligent power. SKiiPPACK® IGBT product range from 600 to 1700V from 150 to 800A sixpack 600V from 150 to 300A sixpack 1200/1700V from 400 to 1200A halfbridge 1200/1700V
|
OCR Scan
|
1200/1700V
semikron snubber
snubber resistance of IGBT
semikron IGBT snubber
power mosfet 600v 600A
IGBT 1200A
SKIIPPACK
Power MOSFET 150 A
mosfet 600V 600A circuit
snubber igbt
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DIM600WHS12-E000 Single Switch IGBT Module DS5837-1.0 April 2005 FEATURES Trench Gate Field Stop Technology Low Conduction Losses KEY PARAMETERS VCES VCE sat (typ) IC (max) IC(PK) (max) (LN23871) 1200V 1.7 V 600A 1200A Low Switching Losses 10 s Short Circuit Withstand
|
Original
|
DIM600WHS12-E000
DS5837-1
LN23871)
DIM600WHS12-E000
|
PDF
|
DIM600BSS17-A000
Abstract: No abstract text available
Text: DIM600BSS17-A000 Single Switch IGBT Module DS5692-1.4.0 September 2007 LN25581 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1700V 2.7 V 600A 1200A *(Measured at the power bus-bars and not the auxiliary
|
Original
|
DIM600BSS17-A000
DS5692-1
LN25581)
DIM600BSS17-A000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.2 May 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25346) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)
|
Original
|
DIM600XSM45-F000
DS5874-1
LN25346)
|
PDF
|
DIM600NSM45-F000
Abstract: No abstract text available
Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.4 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25833) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)
|
Original
|
DIM600NSM45-F000
DS5873-1
LN25833)
DIM600NSM45-F000
450ibility
|
PDF
|
DIM600XSM45-F000
Abstract: 110nF
Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25832) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)
|
Original
|
DIM600XSM45-F000
DS5874-1
LN25832)
DIM600XSM45-F000
110nF
|
PDF
|
IGBT 1200A
Abstract: diode current 1200A MBN1200GR12A IGBT 1200A 600V 600VIC
Text: PDJ-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [定格 1200A/1200V, 1in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用
|
Original
|
PDJ-N1200GR12A-0
MBN1200GR12A
200A/1200V,
1300g
TC125
IGBT 1200A
diode current 1200A
MBN1200GR12A
IGBT 1200A 600V
600VIC
|
PDF
|
FZ1600R12KF4
Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC
|
Original
|
600V/1700V
500V/3300V
50GB60DLC
75GB60DLC
100GB60DLC
150GB60DLC
200GB60DLC
300GB60DLC
FZ1600R12KF4
IGBT FZ 800
75GD120DN2
100GB170DN2
IGBT FZ 1200r16kf4
igbt driver
BSM10GD60DLC
FZ800R12KL4C
igbt 1600V 20A
eupec igbt BSM 100 gb
|
PDF
|
CM600HU-12H
Abstract: E80276
Text: MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM600HU-12H ● IC . 600A ● VCES . 600V ● Insulated Type
|
Original
|
CM600HU-12H
E80276
E80271
12K/W
CM600HU-12H
E80276
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM600HU-12H ● IC . 600A ● VCES . 600V ● Insulated Type
|
Original
|
CM600HU-12H
E80276
E80271
|
PDF
|
T1200TB
Abstract: transistor 7830 diode current 1200A
Text: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T1200TB25A
T1200TB25A
T1200TB
transistor 7830
diode current 1200A
|
PDF
|
