GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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I27243
GA100TS120UPbF
GA100TS120UPBF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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I27236
GA200SA60UP
20kHz
OT-227
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IGBT 1000V .200A
Abstract: irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27221
GA200TS60UX
IGBT 1000V .200A
irf 100v 200A
Diode 15b
RG2 DIODE
Diode IR 1254
GA200TS60UX
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PDF
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GA100TS120U
Abstract: No abstract text available
Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120U
GA100TS120U
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PDF
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GA100TS120U
Abstract: No abstract text available
Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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50060B
GA100TS120U
T52-7105
GA100TS120U
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igbt 1000v 10A
Abstract: No abstract text available
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
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FGA50N100BNTD2
FGA50N100BNTD2
igbt 1000v 10A
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igbt induction cooker
Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
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FGA50N100BNTD2
FGA50N100BNTD2
igbt induction cooker
induction heating cooker
induction cooker circuit with IGBT
induction cooker application notes
induction cooker
fairchild induction cooker
fairchild induction heater
induction cooker component
induction heater
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PDF
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GA200TS60UX
Abstract: IGBT 100V 200A
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27221
GA200TS60UX
12-Mar-07
GA200TS60UX
IGBT 100V 200A
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27221
GA200TS60UX
08-Mar-07
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PDF
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ga200sa60up
Abstract: No abstract text available
Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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I27236
GA200SA60UP
20kHz
12-Mar-07
ga200sa60up
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PDF
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g50n60hs
Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
Text: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGW50N60HS
Eoff25
PG-TO-247-3-1
SGW50N60HS
100substances.
g50n60hs
G50N60
G50N60*HS
g50n60h
SGW50N60HS equivalent
G50N60hs IGBT
207E-04
SGW50N60
PG-TO247-3
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PDF
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G50N60HS
Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGW50N60HS
PG-TO-247-3
Eoff25
G50N60HS
G50N60HS
G50N60
G50N60*HS
SGW50N60HS
IDP45E60
PG-TO-247-3
207E-04
SGW50N60HS equivalent
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G50N60HS
Abstract: G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60
Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGW50N60HS
PG-TO-247-3-21
Eoff25
G50N60HS
G50N60HS
G50N60
G50N60*HS
SGW50N60HS
SGW50N60HS equivalent
207E-04
g50n
SGW50N60
200nC
IDP45E60
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PDF
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G50N60*HS
Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGW50N60HS
Eoff25
PG-TO-247-3-21
SGW50N60HS
100stances.
G50N60*HS
g50n60hs
200nC
G50N60
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igbt 1000v 100a 10 khz
Abstract: No abstract text available
Text: APTGT100TL170G Three level inverter Trench + Field Stop IGBT Power Module VCES = 1700V IC = 100A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop
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APTGT100TL170G
igbt 1000v 100a 10 khz
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PDF
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Untitled
Abstract: No abstract text available
Text: APTGT100TL170G Three level inverter Trench + Field Stop IGBT Power Module VCES = 1700V IC = 100A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop
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APTGT100TL170G
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m5x0.8
Abstract: ge 142 GA200NS61U
Text: PD -94347 GA200NS61U High Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features 3 • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA200NS61U
m5x0.8
ge 142
GA200NS61U
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irf 1740
Abstract: GA200TD120U
Text: PD - 5.061B PRELIMINARY GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA200TD120U
irf 1740
GA200TD120U
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g30n60hs
Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP30N60HS
SGW30N60HS
PG-TO-220-3-1
PG-TO-247-3
G30N60HS
SGW30N60HS
g30n60hs
G30N60hs IGBT
G30N60
SGP30N60HS
600v 30a IGBT
igbt 600V 30A infineon SGW30N60HS
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
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ir 249A
Abstract: GA200TD120U W80S
Text: PD - 50061C GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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50061C
GA200TD120U
ir 249A
GA200TD120U
W80S
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GA200SA60SP
Abstract: No abstract text available
Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC
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I27235
GA200SA60SP
OT-227
OT-227
GA200SA60SP
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g30n60hs
Abstract: g30n60 SGW30N60HS 1A20A
Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP30N60HS
SGW30N60HS
PG-TO-220-3-1
PG-TO-247-3-21
PG-TO-220-3-1
SGW30N60HS
g30n60hs
g30n60
1A20A
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"
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OCR Scan
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IRGKI0100M12
IGST21
002E132
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data S heet No. P D -9.938 International S Rectifier IRGNI0100M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT V CE= 1 2 0 0 V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"
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IRGNI0100M12
0Q221bQ
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PDF
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