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    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz OT-227

    ga200sa60up

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz 12-Mar-07 ga200sa60up