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    IGBT, PASSIVATION Search Results

    IGBT, PASSIVATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    IGBT, PASSIVATION Price and Stock

    Taoglas Antenna Solutions TG.23.0112

    Passive Components , Antennas
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TG.23.0112 3,000
    • 1 -
    • 10 $8.71
    • 100 $8.36
    • 1000 $7.69
    • 10000 $7.38
    		Buy Now

    CTS Corporation CB3-3I-24M576000

    Oscillator - XO (Standard) - 24.576 MHz - Enable/Disable Function - HCMOS, TTL Output - ±50ppm Frequency Stability - 5V Supply - 4-SMD, No Lead.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CB3-3I-24M576000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.907
    • 10000 $0.661
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    CTS Corporation CB3-3I-24M5760

    Oscillator - XO (Standard) - 24.576 MHz - Enable/Disable Function - HCMOS, TTL Output - ±50ppm Frequency Stability - 5V Supply - 4-SMD, No Lead.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CB3-3I-24M5760 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.907
    • 10000 $0.661
    		Buy Now

    Staffall 460S-9404-PASSIVATED

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 460S-9404-PASSIVATED 750
    • 1 $0.9
    • 10 $0.9
    • 100 $0.77
    • 1000 $0.73
    • 10000 $0.73
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    Staffall 4538-632-SS-20

    Hex Standoff, #6-32 Thrd Sz, 1/4 in Thrd L Stainless Steel Passivated, 1/4" Hex W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 4538-632-SS-20 675
    • 1 $2.78
    • 10 $2.78
    • 100 $2.38
    • 1000 $1.65
    • 10000 $1.65
    		Buy Now
    Find more IGBT, PASSIVATION price and stock on Findchips.com

    IGBT, PASSIVATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and


    Original     		APT120GR120D PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12K1721 CH-5600 12K1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12M1730 CH-5600 PDF

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12J1721 CH-5600 12J1721 5SMY 12J1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12G1721 CH-5600 12G1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter


    Original     		12M1721 CH-5600 PDF

    169800

    Abstract: 12M6501
    Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M6501 CH-5600 169800 PDF

    12M1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12M1721 CH-5600 12M1721 PDF

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12J1721 CH-5600 5SMY 12J1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12K1721 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12G1721 CH-5600 PDF

    5SMY 86G1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12G1721 CH-5600 5SMY 86G1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M1721 CH-5600 PDF

    5SMY 86M1730

    Abstract: ac130
    Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M1730 CH-5600 5SMY 86M1730 ac130 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M1721 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12J1721 CH-5600 PDF

    12K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 12K1280 PDF

    132102

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12J1280 CH-5600 132102 PDF

    12M1280

    Abstract: 5SMY12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 CH-5600 12M1280 5SMY12M1280 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12J1280 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 CH-5600 PDF

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		12N4501 CH-5600 abb press-pack igbt PDF

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 76K1280 PDF

    MJ86

    Abstract: 57 A
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12H1280 CH-5600 MJ86 57 A PDF