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    IGBT, PASSIVATION Search Results

    IGBT, PASSIVATION Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation
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    IGBT, PASSIVATION Price and Stock

    Philco/Philips MRS25F-51R1

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    Onlinecomponents.com MRS25F-51R1 5
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    Philco/Philips MRS25F-237K

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    Onlinecomponents.com MRS25F-237K 252
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    Philco/Philips MRS25F-10K

    Res Metal Film 10K Ohm 2% 0.25W(1/4W) ±200ppm/°C Conformal AXL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MRS25F-10K 24,842
    • 1 $0.466
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    • 1000 $0.1056
    • 10000 $0.057
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    Philco/Philips 5053HD215R0FTR

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    Onlinecomponents.com 5053HD215R0FTR 5,000
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    Philco/Philips 5053HD374K0FTR

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    Onlinecomponents.com 5053HD374K0FTR 5,000
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    Find more IGBT, PASSIVATION price and stock on Findchips.com

    IGBT, PASSIVATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and


    Original     		PDF APT120GR120D

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12K1721 CH-5600 12K1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1730 CH-5600

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12J1721 CH-5600 12J1721 5SMY 12J1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12G1721 CH-5600 12G1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter


    Original     		PDF 12M1721 CH-5600

    169800

    Abstract: 12M6501
    Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M6501 CH-5600 169800

    12M1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600 12M1721

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12J1721 CH-5600 5SMY 12J1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12K1721 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12G1721 CH-5600

    5SMY 86G1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12G1721 CH-5600 5SMY 86G1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600

    5SMY 86M1730

    Abstract: ac130
    Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1730 CH-5600 5SMY 86M1730 ac130

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M1721 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12J1721 CH-5600

    12K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600 12K1280

    132102

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12J1280 CH-5600 132102

    12M1280

    Abstract: 5SMY12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 CH-5600 12M1280 5SMY12M1280

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12J1280 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12M1280 CH-5600

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		PDF 12N4501 CH-5600 abb press-pack igbt

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600 76K1280

    MJ86

    Abstract: 57 A
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12H1280 CH-5600 MJ86 57 A