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    12K1280 Price and Stock

    VPG Transducers Y40212K12800T0W

    FRSM0603 2K1280 TCR0.2 0.01% B W
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    DigiKey Y40212K12800T0W Bulk 100
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    • 100 $6.8993
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    Avnet Americas Y40212K12800T0W Waffle Pack 100
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    • 100 $7.3876
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    12K1280 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600 76K1280

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600

    12K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600 12K1280

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


    Original     		PDF 12K1280 5SYA1308-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		PDF 12K1280 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications


    Original     		PDF 12K1280 5SYA1308-03 CH-5600

    12K1280

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12G1200 CH-5600 12K1280

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1


    Original     		PDF 12G1200 CH-5600