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    12M6501

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12M6501 5SYA1627-03 CH-5600 12M6501

    169800

    Abstract: 12M6501
    Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		PDF 12M6501 CH-5600 169800

    SiC BJT

    Abstract: transistor 304
    Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.


    Original     		PDF 12M6501 SiC BJT transistor 304