Untitled
Abstract: No abstract text available
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
K06N60HS
P-TO-220-3-45
SKB06N60HS
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
O-263AB
Q67040-S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
Aug-02
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pal to ntsc rf vidio converter
Abstract: AD9878 LC1210
Text: Mixed-Signal Front End for Broadband Applications AD9878 FEATURES Low cost 3.3 V CMOS MxFE for broadband applications DOCSIS, EURO-DOCSIS, DVB, DAVIC compliant 232 MHz quadrature digital upconverter 12-bit direct IF DAC TxDAC+™ Up to 65 MHz carrier frequency DDS
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AD9878
12-bit
12-bit,
10-bit,
AD8321/AD8323
AD8322/AD8327
AD9878BST
AD9878BSTRL
100-LQFP
ST-100
pal to ntsc rf vidio converter
AD9878
LC1210
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AD8238
Abstract: LC1210 INTERPOLATOR SIN COS spi if8 capacitor AD9878
Text: Mixed-Signal Front End for Broadband Applications AD9878 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS I Tx TxID[5:0] Q SINC–1 16 12 DAC Tx DDS Σ -∆ SDIO Σ-∆ OUTPUT 3 4 CA PORT CONTROL REGISTERS MCLK PLL IF10[4:0] 10 MUX OSCIN IF10 INPUT ADC 12 ADC
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AD9878
IF12B
IF12A
12-bit
MS-026BED
100-Lead
ST-100)
AD9878BST
AD9878BSTZ1
AD9878-EB
AD8238
LC1210
INTERPOLATOR SIN COS spi
if8 capacitor
AD9878
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LC1210
Abstract: No abstract text available
Text: Mixed-Signal Front End for Broadband Applications AD9878 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS I Tx TxID[5:0] Q SINC–1 16 12 DAC Tx DDS Σ -∆ SDIO Σ-∆ OUTPUT 3 4 CA PORT CONTROL REGISTERS MCLK PLL IF10[4:0] 10 MUX OSCIN IF10 INPUT ADC 12 ADC
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PDF
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AD9878
IF12B
IF12A
12-bit
MS-026BED
100-Lead
ST-100)
AD9878BST
AD9878BSTZ1
AD9878-EB
LC1210
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K06N60
Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKB06N60HS
PG-TO-263-3-2
K06N60HS
K06N60
k06n60hs
25E-4
PG-TO-263-3-2
SKB06N60HS
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IF10B
Abstract: ADC12A RX12B AD9878 AGND10 ADC12B 9877 sigma sport
Text: a Preliminary FEATURES Low Cost 3.3V-CMOS MxFE for DOCSIS, EURO-DOCSIS, DVB, DAVIC Compliant Set-Top Box and Cable Modem Applications 232 MHz Quadrature Digital Upconverter 12-B it D irect IF D /A C onverter TxD A C + Up to 65 MHz Carrier Frequency DDS
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Original
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PDF
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12-Bit
10-Bit,
AD8321/AD8323
AD8322/AD8327
AD9878
AD8327
AD8322
IF10B
ADC12A
RX12B
AD9878
AGND10
ADC12B
9877
sigma sport
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKB06N60HS
K06N60HS
P-TO-263-3-2
Q67040S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
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K06N60
Abstract: No abstract text available
Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKB06N60HS
K06N60HS
P-TO-220-3-45
SKB06N60HS
K06N60
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25E-4
Abstract: SKB06N60HS
Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SKB06N60HS
P-TO-263-3-2
O-263AB)
O-263AB
Q67040-S4544
Oct-02
25E-4
SKB06N60HS
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Untitled
Abstract: No abstract text available
Text: product P -P W A M M F I r LMAlNINtL F M W A M f 'f M iT M T I tN M A N L tM tN -100V. -12A, o.3n SDF9130 SDF9130 JAA JAB M H C M U b FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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-100V.
IF--12A.
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Untitled
Abstract: No abstract text available
Text: ^ ¡ » lit r o n UFA? dev ,E E S . _ PRODUCT N-CHANNEL ENHANCEMENT MOS FET 900V, 12A , 0 .9 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1) Drai n-Gate Vo 1tage ( R g s » 1 . 0 M ci ) (1) Gate-Source Voltage Con t inuous
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SDF12N90
IF-12A
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Untitled
Abstract: No abstract text available
Text: PRODUCT P-CHANNEL ENHANCEMENT MOS FET 100V.-12A, 0.3Q SDF9130 SDF9130 JAA JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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PDF
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SDF9130
MIL-S-19500
IF--12A,
03bfibD2
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Untitled
Abstract: No abstract text available
Text: J H l t r o n -PRODUCT DEVICES.INC. ¡177 BLUE H E R O N BLVD. • RIVIERA BEACH, FLORIDA 33404 ^ E L : 407 848-4311 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo 1 f .( 1 )
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IF-12A
MIL-S-19500
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