Untitled
Abstract: No abstract text available
Text: G-7 ICC05 SERIES DIP TYPE IC SOCKET Dimensions for ICC05 Series 8,14,16,18,20,22pin Unit:mm(inch) C max. JAPAN No. of contacts Ref.E 16 KEL A max. B 2.54(0.100) Insulator Configuration 4.4 (0.173) 0.6 (0.024) 0.6 (0.024) 5.1 3.4 (0.134) (0.200) Ref.2.5 (0.098)
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ICC05
22pin)
42pin)
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NM29N16S
Abstract: C1996 ICC01 NM29N16 NM29N16R
Text: NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read
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NM29N16
NM29N16
NM29N16S
C1996
ICC01
NM29N16R
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NM29N16ES
Abstract: C1996 ICC01 NM29N16E
Text: NM29N16E 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16E is a 16 Mbit (2 Mbyte) NAND FLASH which operates over the industrial (b40 C to a 85 C) temperature range The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes
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NM29N16E
NM29N16E
NM29N16ES
C1996
ICC01
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SIC01
Abstract: "vlsi technology" on 5718 ICC05
Text: SIC01 SERIES 70mil 1.778mm SHRINK IC SOCKET SUMMARY As IC electronic packaging progresses towards further LSI/VLSI technology, KEL Corp. has met this challenge by developing a new 70mil Shrink IC socket. Kel has again incorporated a high reliability and quality
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SIC01
70mil
778mm)
70mil
ICC05
SIC01
"vlsi technology"
on 5718
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tc58v32ft
Abstract: TC58V32
Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32
TC58V32FT
528-byte,
528-byte
TC58V32FT--
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT/DC TENTATIVE T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT SILICON GATE C M O S 2, 64-MBIT 8M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND "E2PRQM) organized as 528 bytes X 16 pages X 1024 blocks.
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64-MBIT
TC58V64FT/DC
TC58V64FT/DC
016-bit)
528-byte
44/40-P-400-0
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wf vqc 10 d a6
Abstract: TC58V32AFT tr-5-t
Text: T O S H IB A TC58V32AFT T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT T E N T A T IV E SILICON GATE C M O S 32 M b it 4 M X 8 bit CM O S NAND E2PROM DESCRIPTION The TC58V 32 device is a sin g le volt 32 M (34,603,008) b it N A N D E lectrically Erasable and
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TC58V32AFT
TC58V32
44/40-P-400-0
wf vqc 10 d a6
TC58V32AFT
tr-5-t
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toshiba NAND ID code
Abstract: No abstract text available
Text: TOSHIBA TC5832FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC5832FT
TC5832FT
528-byte,
528-byte
toshiba NAND ID code
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12v mic transistor amplifiers
Abstract: TA8155FN TA8155F
Text: TA8155F/FN TO SH IBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 8 1 5 5 F , T A 8 1 5 5 F N REC/PB SYSTEM DUAL PRE-AMPLIFIER 1.5/3V USE The TA8155F and TA8155FN are REC/PB system dual pre amplifier ICs, which are developed for low voltage
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TA8155F/FN
TA8155F,
TA8155FN
TA8155F
TA8155FN
12v mic transistor amplifiers
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Untitled
Abstract: No abstract text available
Text: TC58V16BFT TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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TC58V16BFT
TC58V16
264-byte,
264-byte
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC5832FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit N A N D Electrically Erasable and Programmable Read O nly Memory (N A N D E E P R O M ) organized as 528 byte X 16 pages X 512 blocks.
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TC5832FT
TC5832FT
528-byte,
528-byte
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TC5816ADC
Abstract: No abstract text available
Text: IN TEG R A TED OSHIBA CIR CU IT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ADC SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only
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TC5816
264-byte,
264-byte
TC5816AD
FDC-22
TC5816ADC--38*
TC5816ADC
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ssfdc tc
Abstract: TC58V32ADC fDC22A a7611
Text: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32ADC
TC58V32ADC
32MByte
FDC-22A
ssfdc tc
fDC22A
a7611
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TC5832DC
Abstract: TC58V32ADC TC58V32AFT TC58V32DC
Text: TOSHIBA TENTATIVE TC58V3 2AFT/ADC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32AFT/ADC device is a single volt 32 M (34,603,008) b it NAND E lectrically E rasable and P rog ram m ab le Read O nly M emory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.
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TC58V3
TC58V32AFT/ADC
WemffffM-MTO0OTTO92
FDC-22A
TC5832DC
TC58V32ADC
TC58V32AFT
TC58V32DC
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eeprom toshiba L 510
Abstract: TC58V32FT
Text: TOSHIBA TENTATIVE TC58V32FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V32FT device is a single volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC58V32FT
TC58V32FT
528-byte,
528-byte
eeprom toshiba L 510
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swg 19
Abstract: condenser microphone 12v mic transistor amplifiers mic bias circuit TA8155F TA8155FN
Text: TOSHIBA TA8155F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8155F, TA8155FN R EC /PB SYSTEM DUAL PRE-AMPLIFIER 1 . 5 / 3 V USE The TA8155F and TA8155FN are REC/PB system dual pre amplifier ICs, which are developed for low voltage operation (1.5/3V use). These are especially suitable for a
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TA8155F/FN
TA8155F,
TA8155FN
TA8155F
TA8155FN
SSOP24-P-3QO-1
SSOP24-P-300-0
325TYP
swg 19
condenser microphone
12v mic transistor amplifiers
mic bias circuit
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 b it CMOS N A N D E2PROM (2M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and
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TC58V16BDC
TC58V16BDC
32MByte
FDC-22A
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Untitled
Abstract: No abstract text available
Text: National NM29N16 tß Semiconductor NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH. The device is organized as an array of 512 blocks, each consist ing of 16 pages. Each page contains 264 bytes. All com
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NM29N16
NM29N16
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chips 65554
Abstract: TSC-5 640x480x8bpp 05TM
Text: 17-1 •L nirb E l e c t r ic a l S p e c if ic a t io n s 1 7 E l e c t r ic a l S p e c if ic a t io n s Table 17-1: 65554 Absolute M aximum Conditions Symbol Pd Vcc V, Vo Parameter Power Dissipation package reliability limit Supply Voltage!" Input Voltage
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435mm
0D1Q577
chips 65554
TSC-5
640x480x8bpp
05TM
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microphone amplifier with alc
Abstract: 12v mic transistor amplifiers TA8155F TA8155FN
Text: TO SH IB A TA8155F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8155F, TA8155FN REC/PB SYSTEM DUAL PRE-AMPLIFIER 1.5/3V USE The TA8155F and TA8155FN are REC /PB system dual pre amplifier ICs, which are developed for low voltage operation (1.5/3V use). These are especially suitable for a
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TA8155F/FN
TA8155F,
TA8155FN
TA8155F
TA8155FN
SSOP24-P-3QO-1
SSOP24-P-300-0
microphone amplifier with alc
12v mic transistor amplifiers
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Untitled
Abstract: No abstract text available
Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32
TC58V32FT
528-byte,
528-byte
TC58V32FTâ
TSOP44-P-400B
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 vo lt 128 M (138,412,032) b it N A N D E le ctrica lly Erasable and Program m able Read O nly Mem ory (N A N D E E P R O M ) organized as 528 bytes X 32 pages X 1024 blocks.
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TH58V128FT
TH58V128
44/40-P-400-0
FTH128NCM-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC5832DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC5832DC device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC5832DC
TC5832DC
528-byte,
528-byte
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