NM29N16S
Abstract: C1996 ICC01 NM29N16 NM29N16R
Text: NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read
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NM29N16
NM29N16
NM29N16S
C1996
ICC01
NM29N16R
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toshiba NAND ID code
Abstract: toshiba nand flash 16Mb KM29N16000TS TC5816FT toshiba nand flash 1995 C1995 KM29N16000RS NM29N16 NM29N16R NM29N16S
Text: National Semiconductor Application Note 993 Robert Frizzell April 1995 INTRODUCTION The NM29N16 is a 16Mb NAND Flash device which is second sourced by other manufacturers This provides customers the added confidence of knowing that they will have an adequate supply of competively priced product which is not
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NM29N16
toshiba NAND ID code
toshiba nand flash 16Mb
KM29N16000TS
TC5816FT
toshiba nand flash 1995
C1995
KM29N16000RS
NM29N16R
NM29N16S
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11b15
Abstract: NM29N16 NM29N16R NM29N16S 119155
Text: PRI NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E^PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH. The device ¡s organized as an array of 512 blocks, each consist ing of 16 pages. Each page contains 264 bytes. All com
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NM29N16
NM29N16
tl/d/11915-75
D7DT03
11b15
NM29N16R
NM29N16S
119155
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Untitled
Abstract: No abstract text available
Text: National NM29N16 tß Semiconductor NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH. The device is organized as an array of 512 blocks, each consist ing of 16 pages. Each page contains 264 bytes. All com
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NM29N16
NM29N16
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