S432 DIODE schottky
Abstract: DIODE S417 Schottky s448 schottky diode s448 diode diode s526 DIODE S438 eeprom s190 DIODE S526 Schottky diode s426 eeprom s130
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD161608 176-RGB x 220-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY DESCRIPTION The μPD161608 is TFT-LCD display driver IC. Also, it is possible by 176-RGB x 220-dot to display 262,144 colors. FEATURES • 176-RGB x 220-dot TFT-LCD display driver IC for 262,144 colors 528ch-source driver/220ch-gate driver
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PD161608
176-RGB
220-DOT
144-COLOR
PD161608
528ch-source
S432 DIODE schottky
DIODE S417 Schottky
s448 schottky diode
s448 diode
diode s526
DIODE S438
eeprom s190
DIODE S526 Schottky
diode s426
eeprom s130
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Datasheet of IC 7432
Abstract: 7415 ic pin details data sheet IC 7432 DATASHEET OF IC 7401 7401 ic configuration IC 7409 draw pin configuration of ic 7402 INFORMATION OF IC 7424 BGA and QFP Package mounting EIA and EIAJ standards
Text: CHAPTER 1 CHAPTER 1 1.1 PACKAGE OUTLINES AND EXPLANATION PACKAGE OUTLINES AND EXPLANATION Types of Packages 1.1.1 Classification of IC packages The following figure classifies the packages for semiconductor products: SDIP DIP QUIP SIP ZIP Through hole mount type
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NEC A39A
Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Text: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES
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C10943XJ6V0IF00
IEI-635,
IEI-1213)
ED-7411
NEC A39A
NEC A39A 240
SOP28 330 mil land pattern
NEC A39A 8 PIN
mjh 106
120-PIN 282 185 01
smd TRANSISTOR code b6
ED-7500
transistor a39a
SIP 400B
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eeprom s190
Abstract: eeprom s130 S507 s331 eeprom Datasheet of 7492 IC 66285 929 rev oh s26 KVP14 KVP18 444-573
Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD161608 262,144 色カラーTFT 液晶対応 176-RGB x 220 ドット 1 チップ・ドライバ μPD161608 は，TFT 液晶対応の表示コントローラ・ドライバ IC です。また，176-RGB x 220 ドットにより 262,144
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PD161608
176-RGB
IC528
PD161608P
S17594JJ2V0DS00
VLCD63
eeprom s190
eeprom s130
S507
s331 eeprom
Datasheet of 7492 IC
66285
929 rev oh s26
KVP14
KVP18
444-573
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ic 8255
Abstract: S350P
Text: TELEFUNKEN Semiconductors S 350 P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are
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S350P
850nm.
D-74025
ic 8255
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IC S350
Abstract: LL-S350PTC
Text: Luckylight 1.40mm Height 1206 Package With Inner Lens Phototransistor Technical Data Sheet Part No.: LL-S350PTC-1A Spec No.: S350 Approved: ZHOU Rev No.: V.2 Checked: Wu Lucky Light Electronics Co., Ltd. Date: Dec./26/2006 Drawn: Shu Page: 1 OF 9 http://www.luckylight.cn
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LL-S350PTC-1A
S350PT
IC S350
LL-S350PTC
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8239
Abstract: S350P of ic 8255
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
D-74025
20-May-99
8239
of ic 8255
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Untitled
Abstract: No abstract text available
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
D-74025
20-May-99
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S350P
Abstract: ic 8255 phototransistor, 850nm
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
D-74025
20-May-99
ic 8255
phototransistor, 850nm
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lm 4046 IC
Abstract: 4046 analog IC ic 4046 sampling pulse generator Lm 4046
Text: S3506I/S3507I/S3507AI fc A M I Industrial Temperature Am e r ic a n m ic r o system s , in c . CMOS Single Chip ^-Law/A-Law Synchronous Combo Codecs With Filters Features • • • • • • • • • Independent Transm it and Receive Sections W ith 75dB Isolation
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S3506I/S3507I/S3507AI
600fi
S3S06
lm 4046 IC
4046 analog IC
ic 4046 sampling pulse generator
Lm 4046
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S3507
Abstract: AMI AMERICAN encoder 74175 ST110 PCM encoder circuit ami
Text: MAMA. S3506I/S3507I/S3507AI Industrial Temperature a m e r ic a n m ic r o s y s t e m s in c . CMOS Single Chip pi-Law/A-Law Synchronous Combo Codecs With Filters Features • Encoder has Dual-Speed Auto-Zero Loop for Fast Acquisition on Power-up • Low Absolute Group Delay = 450/isec @ 1kHz
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S35061/S3507I/S3507Al
256kHz
64kHz
S3507
AMI AMERICAN
encoder 74175
ST110
PCM encoder circuit ami
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Untitled
Abstract: No abstract text available
Text: AMI S2811 AM ER IC A N M ICR O SY ST EM S, INC.| SIGNAL PROCESSING PERIPHERAL Features General Description □ Programmable for Digital Processing of Signals in Voioe-Grade Communications Systems and Other Applications with Signals in the Audio Frequency Range
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S2811
12-Bit
256x17)
256x16)
300ns
20MHz)
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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L78M09ML
Abstract: IC-2607 26071 L78M12ML
Text: SANYO SEMICONDUCTOR lEE CORP L78M00ML Series D I 7T17G7IT 00G34bD fi "J“ l ^ S S - U - »3 3100 M o n o lith ic Linear 1C 5 to 24V 0 .5 A 3-Pin ’' ' ' •' • CD2607 Voltage Regulator Features . Output voltage L78M05ML:5V L78M06ML:6V L78M07ML:7V L78M08ML: 8V
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L78M00ML
Q0G34bD
L78M05ML
L78M09ML
L78M18ML:
500mA
L78M06ML
L78M10ML
L78M20ML
L78M07ML
IC-2607
26071
L78M12ML
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2sd1007
Abstract: No abstract text available
Text: NEC S IL IC O N T R A N S IS T O R S ELECTRON DEVICE 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRA N SISTO RS POWER MINI MOLD DESCRIPTIO N The 2SD1006 and 2SD 1007 are designed fo r audio frequency power a m p lifie r application, especially in H ybrid Integrated
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2SD1006
2SD1007
2SD1007
2SD1007)
2SD1006)
2SB805
2SB806
2S01007
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ah 471k capacitor
Abstract: FB F251 JY 222 M capacitor RPU05 RQC09 RQC05 101 Ceramic Disc Capacitors RPU08 RQC08 30-JRT
Text: H 15 "b "7 ^ "j 0 3 > x > I f ¡5 *Class2s • Class3 CERA M IC DISC CA PA CITO R (HIGH DIELECTRIC CONSTANT TYPE • CLASS 2, SEMICONDUCTING CERAMIC TYPE • CLASS 3) O PERATING TEM P. -25°C~+85"C <Class2> • Large capacitance values relative to size • High withstand voltage
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SrTi03)
ah 471k capacitor
FB F251
JY 222 M capacitor
RPU05
RQC09
RQC05
101 Ceramic Disc Capacitors
RPU08
RQC08
30-JRT
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zener 245
Abstract: 700J bzx384-B4V7 MARKING S95 marking s350 BZX384 bzx384b
Text: CA = G e n e r a l v S e m ic o n d u c t o r BZX384 Series Zener Diodes Vz Range 2.4V to 75V Power Dissipation 200mW SOD-323 Mounting Pad Layout 0.055 , 1.40 ) 0.062 | ( 1.60 ) | Mechanical Data Features Case: SOD-323 Plastic Package Weight: Approx. 0.004g
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BZX384
200mW
OD-323
OD-323
zener 245
700J
bzx384-B4V7
MARKING S95
marking s350
bzx384b
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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BPW85C
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85A
BPW85B
BPW85C
BPW96A
BPW96B
BPW96C
BPV11
TEMT2100
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L78M15ML equivalent
Abstract: L78M05ML L78H12 af515 HCFT L78M06ML L78M07ML L78M08ML L78M09ML L78M10ML
Text: SANYO SEMICONDUCTOR CORP lEE D I 7T17G7IT 00G34bD fi "J“ l ^ S S - U - »3 L 7 8 M 0 0 M L Series M o n o lith ic L inear 1C 3100 ’' ' ' • CD2607 ' • 5 to 2 4 V 0 .5 A 3-Pin Voltage Regulator Features . Output voltage L78M05ML:5V L78M06ML:6V L78M07ML:7V
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L78M00ML
Q0G34bD
L78M05ML
L78M09ML
L78M18ML:
500mA
L78M06ML
L78M10ML
L78M20ML
L78M07ML
L78M15ML equivalent
L78H12
af515
HCFT
L78M08ML
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Untitled
Abstract: No abstract text available
Text: TAIWAN TS78M00A Series % S E M IC O N D U C T O R pb; RoHS 3-Terminal 500mA Positive Voltage Regulator CO M PLÌAN C E TO-252 (DPAK P in D efinitio n: 1. In p u t 2. Ground (tab) 3. Output £9 1 23 1 23 General Description The TS73M00A Series positive voltage regulators are identical to the popular TS78ÛÛA Series devices, except that
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TS78M00A
500mA
O-252
TS73M00A
TS7300A
TS78M0
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TD-6161
Abstract: PA33 TCMT-c
Text: -T — S 7 • 5 / — h NEC C o m p o u n d T ran sis to r A Q 1 '> 'J - X W t % F*g M P N p x lJ □ V > 7 > i> 7 * 9 m it m o ic ^ ib , -t — ;?• W / A K l lif i ^ , 2 A i T c o ^ a K 7 4 7 "* M tÈ T "t„ T X f f iii^ f t jt L T ^ i- to AQ1'><; - X - K *
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SC-43B
I-150
PWS10
CycleS50
D10840JJ2V0DS00
TD-6161
PA33
TCMT-c
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Untitled
Abstract: No abstract text available
Text: Temic S e m i c o n d u c S350P t o r s Silicon NPN Phototransistor Description S 3 5 0 P is a h ig h se n s itiv e silic o n N P N e p ita x ia l p la n a r p h o to tra n s is to r in a m in ia tu re p la stic c a s e w ith flat w indow . W ith a lead c e n te r - to - c e n te r s p a c in g o f 2 .5 4 m m an d a
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S350P
850nm
15-Ju
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