Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IC 3A HFE 500 Search Results

    IC 3A HFE 500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 3A HFE 500 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD1309

    Abstract: 2SB975 ic 3A hfe 500
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309


    Original     		2SD1309 -100V, 2SD1309 2SB975 ic 3A hfe 500 PDF

    2SC4130

    Abstract: FM20 transistor+2sC4130
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj


    Original     		2SC4130 Pulse14) 100max 400min 15typ 50typ O220F) 2SC4130 FM20 transistor+2sC4130 PDF

    2SC3680

    Abstract: No abstract text available
    Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


    Original     		2SC3680 100max 800min Pulse14) 105typ MT-100 2SC3680 PDF

    2SC3890

    Abstract: FM20
    Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


    Original     		2SC3890 100max 400min Pulse14) 10typ 50typ O220F) 2SC3890 FM20 PDF

    ZUMT617

    Abstract: ZUMT717 DSA003732
    Text: Super323  SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT717 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * * IC CONT 1.5A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed) Extremely Low Saturation Voltage


    Original     		Super323TM OT323 ZUMT717 500mW ZUMT617 100ms ZUMT617 ZUMT717 DSA003732 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor 2 PC 30(Tc=25°C) Tj V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz


    Original     		2SC4130 Pulse14) O220F) 100max 400min 15typ 50typ PDF

    ic 3A hfe 500

    Abstract: IC 3A 2SB601
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A


    Original     		-100V -100V, ic 3A hfe 500 IC 3A 2SB601 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H hFE=100 320 VCE=-2V, IC=-0.5A . G J B E hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM A


    Original     		KTA1001 -75mA) 250mm PDF

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


    Original     		2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045 PDF

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


    Original     		2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045 PDF

    FT-210

    Abstract: ZUMT618 ZUMT718 DSA003732
    Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		Super323TM OT323 ZUMT618 500mW ZUMT718 100ms FT-210 ZUMT618 ZUMT718 DSA003732 PDF

    KTA1001

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES C H hFE=100 320 VCE=-2V, IC=-0.5A . G J B E hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM A


    Original     		KTA1001 -75mA) 250mm KTA1001 PDF

    2SB1431

    Abstract: 2SB143 ic 3A hfe 500
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -3A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3mA)


    Original     		-100V -100V; 2SB1431 2SB143 ic 3A hfe 500 PDF

    2SD1796

    Abstract: relay 12v 3a datasheet FM20
    Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A


    Original     		2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 relay 12v 3a datasheet FM20 PDF

    2SC4546

    Abstract: FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor PDF

    IC 1A datasheet

    Abstract: ZUMT618 ZUMT718 DSA003732
    Text:  Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		Super323 OT323 ZUMT718 500mW ZUMT618 100ms IC 1A datasheet ZUMT618 ZUMT718 DSA003732 PDF

    transistor npn high speed switching 5A 600v

    Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) transistor npn high speed switching 5A 600v 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text:  Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		Super323 OT323 ZUMT718 500mW ZUMT618 100ms PDF

    2SD2014

    Abstract: 2SB1257 FM20
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 2SD2014 2SB1257 FM20 PDF

    2SD2014

    Abstract: 2SB1257 FM20 S8010
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 150x150x2 2SD2014 2SB1257 FM20 S8010 PDF

    KTD1415

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E S B FEATURES G ᴌHigh DC Current Gain : hFE=2000 Min. at VCE=3V, IC=3A. ᴌLow Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.


    Original     		KTD1415 KTD1415 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000 Min. at VCE=2V, IC=3A. K Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.


    Original     		KTD1413 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000 Min. at VCE=3V, IC=3A. K Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.


    Original     		KTD1415 PDF

    transistor a1001

    Abstract: KEC SOT89 H1 SOT-89 transistor rf A1001 KTA1001 sot89 E3
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1001 EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 V ce=-2V, Ic=-0.5A . • hFE=70(Min.) (Vce=-2V, Ic=-3A). • Low Collector Saturation Voltage.


    OCR Scan     		KTA1001 -75mA) 250mm2 transistor a1001 KEC SOT89 H1 SOT-89 transistor rf A1001 KTA1001 sot89 E3 PDF