opamp 759
Abstract: folded cascode OPAMP folded cascode op amp OP021IS01
Text: OP021IS01 AMERICAN MICROSYSTEMS, INC June, 1998 Preliminary AMI 0.8 micron CMOS CWL Double Poly SINGLE-STAGE OP AMP FEATURES • • AVDD IB25U Small layout. Good for driving capacitive load only. VIP VOUT DESCRIPTION VIN This is a simple single-stage foldedcascode opamp capable of driving
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OP021IS01
IB25U
21MHz.
opamp 759
folded cascode
OPAMP
folded cascode op amp
OP021IS01
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iob25hh
Abstract: RAM256X9AA
Text: ProASICPLUS Macro Library Guide R1-2002 Actel Corporation, Sunnyvale, CA 94086 2002 Actel Corporation. All rights reserved. Part Number: 5579016-1 Release: June 2002 No part of this document may be copied or reproduced in any form or by any means without prior written consent of Actel.
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R1-2002
iob25hh
RAM256X9AA
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OB33LN
Abstract: IOB33LNU IOBL33LLU OB25LPLL IOBL25HHU OB33PL IOB33PH OTB33PL OB33LL
Text: A ppl i cati on N ot e I/O Cell Selection for ProASIC 500K Devices In t ro d u c t i o n Table 1 • Input Pads The ProASIC 500K family offers a variety of different I/O cells to meet specific application requirements. These I/O cells can be configured with a 3.3V or 2.5V I/O ring supply
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IB33U
IB25U
IB25LPU
IB25LP
OB33LN
IOB33LNU
IOBL33LLU
OB25LPLL
IOBL25HHU
OB33PL
IOB33PH
OTB33PL
OB33LL
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iob25hh
Abstract: IOB33LNU
Text: Application Note I/O Cell Selection for ProASIC 500K Devices Introduction Table 1 • Input Pads The ProASIC 500K family offers a variety of different I/O cells to meet specific application requirements. These I/O cells can be configured with a 3.3V or 2.5V I/O ring supply voltage.
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IB33U
IB25U
IB25LPU
IB25LP
IOB25LPLN
IOB25LPLL
IOBL25LPHH
IOBL25LPHN
IOBL25LPHL
IOBL25LPLH
iob25hh
IOB33LNU
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FIFO256X9SSRP
Abstract: iob25hh RAM256X9AA
Text: ProASIC Macro Library Guide November 1999 Actel Corporation, Sunnyvale, CA 94086 ã 1999 Actel Corporation. All rights reserved. Part Number: 5579016-1 Release: November 1999 No part of this document may be copied or reproduced in any form or by any means without prior
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iob25hh
Abstract: No abstract text available
Text: ProASIC Macro Library Guide June 1999 Actel Corporation, Sunnyvale, CA 94086 ã 1999 Actel Corporation. All rights reserved. Part Number: 5579016-0 Release: June 1999 No part of this document may be copied or reproduced in any form or by any means without prior
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AC142
Abstract: IOB33PH IOB33PNU OTB33PL IOB33LL ob33lh OTB33PH
Text: Application Note AC142 I/O Cell Selection for ProASIC 500K Devices In t ro d u c t i o n Table 1 • Input Pads The ProASIC 500K family offers a variety of different I/O cells to meet specific application requirements. These I/O cells can be configured with a 3.3V or 2.5V I/O ring supply
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AC142
AC142
IOB33PH
IOB33PNU
OTB33PL
IOB33LL
ob33lh
OTB33PH
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MA3232
Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCBO-100V
BVCE0-80V
BVEBO-15V
BVCBO-60V
BVCEO-40V
BVCB0-80V
BVCE0-60V
BVCB0-100V
MA3232
BF123
CA3036
FT4017
2n1613 replacement
A431
BF121
DIODE SJ 98
DM01B
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transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor a640
transistor A608
2SC632
transistor 2sC632
2SC634
L14B
Pt-100W
CA3036
DM02B
FV918
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transistor k1502
Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
transistor k1502
dr 25 germanium diode
DIODE 10N 40D
2N3379
CA3036
K1502
K1501
2N5513
darlington 12V 6.2A
P1029
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DIODE SJ 98
Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
DIODE SJ 98
CA3036
silicon epitaxial mesa diode microwave switch
V405T
DARLINGTON 3A 100V npn array
2n1613 replacement
A431
MT726
MT869
MT995
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A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
A1381 transistor
2N5036
CA3036
NF Amp NPN Silicon transistor TO-3
MA3232
20C26
2N5034 package
2N5035
L29a
2N5034
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transistor A431
Abstract: CA3036 a106 transistor A431 transistor d16P4 4JD12X009 A431 BFR14 MA3232 GI3793
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor A431
CA3036
a106 transistor
A431 transistor
d16P4
4JD12X009
A431
BFR14
MA3232
GI3793
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
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UD1001
Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
UD1001
FT4017
transistor A431
MA3232
CA3036
UC850
DM01B
DM02B
UC340
L0NA
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2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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