i8042
Abstract: IAM-81028 IAM-81008 I8082 i40220 I40420 AN-S013 IAM-82008 I80220 I80820
Text: AB-0013: SPICE Models for the IAM- 81 and IAM-82 Active Mixers Revised February, 1999 Introduction The IAM81 and IAM82 mixers are offered in a number of packages. IAM-81000 and IAM-82000 are chip form; IAM-81008 and IAM-82008 are SO-8 plastic packaged versions, and IAM-81028 and IAM-82028
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AB-0013:
IAM-82
IAM81
IAM82
IAM-81000
IAM-82000
IAM-81008
IAM-82008
IAM-81028
IAM-82028
i8042
I8082
i40220
I40420
AN-S013
I80220
I80820
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IAM82018
Abstract: IAM-81018 gilbert cell differential pair IAM-82018 signal path designer Gilbert Cell
Text: IAM-8 Series Active Mixers Application Note S013 Introduction Hewlett-Packard’s IAM-8 products are Gilbert cell based double balanced active mixers capable of accepting RF inputs up to 5 GHz and producing IF outputs up to 2 GHz. They feature conversion gain, insensitivity to mismatch, and superior isolation in a very compact format.
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unf80
IAM-82028,
5091-6488E
5967-6158E
IAM82018
IAM-81018
gilbert cell differential pair
IAM-82018
signal path designer
Gilbert Cell
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IAM-81018
Abstract: IAM-82018 gilbert cell sum IAM-82 IAM-82028 IAM82018 IAM-81 IAM-81028 IAM-8-82028 59802-1
Text: IAM-8 Series Active Mixers Application Note S013 Introduction Agilent Technologies’ IAM-8 products are Gilbert cell based double balanced active mixers capable of accepting RF inputs up to 5 GHz and producing IF outputs up to 2 GHz. They feature conversion gain, insensitivity to mismatch, and superior isolation in a very compact format.
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1000pF
1500pF
IAM-82028,
5967-6158E
5980-2112E
IAM-81018
IAM-82018
gilbert cell sum
IAM-82
IAM-82028
IAM82018
IAM-81
IAM-81028
IAM-8-82028
59802-1
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JESD22-A114-B
Abstract: transistor A114 IAM-91563 M2003 M2004 MTTF transistor 107 A
Text: Agilent MGA-8xxxx Series IAM-91563 GaAs MMIC Devices Reliability Data Sheet Description The devices referenced on this data sheet are made using the Agilent Technologies Pseudomorphic High Electron Mobility Transistor PHEMPT A process. Life Tests The following cumulative test
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IAM-91563
JESD22-A113-A
MIL-STD-202,
94-V0.
5988-3729EN
5988-9935EN
JESD22-A114-B
transistor A114
IAM-91563
M2003
M2004
MTTF
transistor 107 A
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1756-QS105
Abstract: 12v to 230v inverters circuit diagrams 2094-xLxxS 20-HIM-A3 i ball 450 watt smps repairing 2094-bc02-m02 Allen-Bradley 2090-XXLF-3100 2094-BC04-M03-S wiring diagram motor autotransformer 2090-XXLF-3100
Text: User Manual Kinetix 6000 Multi-axis Servo Drives Catalog Numbers 2094-ACxx-Mxx-S, 2094-BCxx-Mxx-S, 2094-AMxx-S, 2094-BMxx-S 2094-ACxx-Mxx, 2094-BCxx-Mxx, 2094-AMxx, 2094-BMxx, 2094-BSP2, 2094-PRF Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety
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2094-ACxx-Mxx-S,
2094-BCxx-Mxx-S,
2094-AMxx-S,
2094-BMxx-S
2094-ACxx-Mxx,
2094-BCxx-Mxx,
2094-AMxx,
2094-BMxx,
2094-BSP2,
2094-PRF
1756-QS105
12v to 230v inverters circuit diagrams
2094-xLxxS
20-HIM-A3
i ball 450 watt smps repairing
2094-bc02-m02
Allen-Bradley 2090-XXLF-3100
2094-BC04-M03-S
wiring diagram motor autotransformer
2090-XXLF-3100
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Transistor hall s41
Abstract: s41 230 hall effect s41 hall effect sensor 1756-QS105 HEIDENHAIN endat 2.1 2094-EN02D-M01-S1 hall effect sensor s41 s53 optocoupler 2094-BM01-M 1783-ETAP
Text: Kinetix 6200 and Kinetix 6500 Modular Multi-axis Servo Drives User Manual Catalog Numbers 2094-BC01-MP5-M, 2094-BC01-M01-M, 2094-BC02-M02-M, 2094-BMP5-M, 2094-BM01-M, 2094-BM02-M, 2094-SE02F-M00-S0, 2094-SE02F-M00-S1, 2094-EN02D-M01-S0, 2094-EN02D-M01-S1,
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2094-BC01-MP5-M,
2094-BC01-M01-M,
2094-BC02-M02-M,
2094-BMP5-M,
2094-BM01-M,
2094-BM02-M,
2094-SE02F-M00-S0,
2094-SE02F-M00-S1,
2094-EN02D-M01-S0,
2094-EN02D-M01-S1,
Transistor hall s41
s41 230 hall effect
s41 hall effect sensor
1756-QS105
HEIDENHAIN endat 2.1
2094-EN02D-M01-S1
hall effect sensor s41
s53 optocoupler
2094-BM01-M
1783-ETAP
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active double balanced mixer
Abstract: 180MIL hic an005
Text: HEW LETT PACKARD IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Features • • • • • • • • IAM-81000 Chip Outline 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz IF Output From DC to 1 GHz with Gain
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IAM-81000
active double balanced mixer
180MIL
hic an005
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IAM-81000
Abstract: IAM transistor
Text: HEWLETT-PACKARD/ CMP N T S blE J> m M447SA4 aOCH'nb fl5b IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Thai HEW LETT W!HA PACKARD IAM-81000 Chip Outline Features • • • • • • • • I HPA 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz
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M447SA4
IAM-81000
IAM transistor
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Untitled
Abstract: No abstract text available
Text: PACKAGING CODES STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 51 Bulk 2 3 4 4A 4B 4C 4D 5 52 53 54 D O -2 1 4 /2 1 5 A A SM B , 12m m Tape, 7" D iam eter Plastic Reel 26m m Horizontal Taping and Am m o Box Packing 52.4m m Horizontal Tape, 13” D iam eter P aper R eel C lass I
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TDA3654
Abstract: ac voltage stabilizer circuit diagram TDA3654AU TDA3654U LG flyback flyback data pin diagram QDM7234 sot131b sot157b toa25
Text: NAPC/ SIGNE TIC S IflE » • Signetics TDA3654 bb53*iaM 0QM7235 Ö ■ SIC3_ T -7 7 -0 -7 -1 Vertical Deflection Output Circuit Product Specification Linear Products PIN CONFIGURATION DESCRIPTION FEATURES The TDA3654 is a full-performance verti cal deflection output circuit in a 9-lead,
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TDA3654
T-77-07-11
00M7237
150eC
ac voltage stabilizer circuit diagram
TDA3654AU
TDA3654U
LG flyback
flyback data pin diagram
QDM7234
sot131b
sot157b
toa25
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Untitled
Abstract: No abstract text available
Text: data sheet '332. MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip July, 1991 Features • • • • • • • • IAM-8100 Chip Outline 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz IF Output From DC to 1 GHz with Gain
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IAM-8100
IAM-81000
ADS-1752/7-91
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ck 77-1 3 94v
Abstract: MAX1771 15VInput MAX1771CPA
Text: 72V o r A djustable, High-Efficiency, L o w Iq , S t e p - U p DC- DC C o n t r o l l e r Description This controller uses m iniature external com ponents. Its high sw itching fre q u e n cy up to 300kH z allow s surface-m ount m agnetics of 5mm height and 9mm d iam e
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300kH
MAX1771
AX1771
300mA,
150jlF
1N5820
032mm)
ck 77-1 3 94v
MAX1771
15VInput
MAX1771CPA
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la1385
Abstract: vertical deflection circuit
Text: SANYO SEMICONDUCTOR 7997076 SANYO CORP 7b SEMICONDUCTOR DE 7^707^ CORP O D G iam 76C LA1385 01841 ^ Îl-o f ô ° T D T’ 77-'Ö7~11 C IR C U IT D R A W I N G N o .a O S 6 monolithic linear IC VERTICAL DEFLECTION CIRCUIT OF B / W TV 3018A The L A 1 3 8 5 , which is an IC fo r vertical deflection
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LA1385
la1385
vertical deflection circuit
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smd transistor 2f
Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.
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Tap15
FTO-220
S10VB
S15VB
S15VBA
S25VB
S50VB
S10WB
S15WB
S20WB
smd transistor 2f
330 smd
transistor 2sk 168
K2663
smd TRANSISTOR code 2F
2SJ 162
m 147 smd transistor
s4vb 10 73
SMD CODE TRANSISTOR 2SK
smd transistor 1Z
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BFS22A
Abstract: No abstract text available
Text: PHILIPS bSE IN TE RNA TI ONA L T> m 711002b O D b S b n bbS I PHIN B FS 2 2 A V.H.F. POW ER TRAN SISTO R N-P-N epitaxial planar transistor intended fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran
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711002b
BFS22A
BFS22A
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2N3924
Abstract: inductor 4312 020 36640 2N3927 7z08 4312 020 36640 2N3926 aTO-39 842 ic Silicon Epitaxial Planar Transistor philips cl 100 hie
Text: b'ìE T> • 2N3924 2N3926 2N3927 b b S B ' m 002*1700 Tb7 BiAPX N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS T he 2 N 3 9 2 4 is an n-p-n o verlay tra nsistor in a T O -3 9 m etal envelope w ith the c o lle c to r connected to the case.
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2N3924
2N3926
2N3927
2N3924
aTO-39
The2N3926
2N3927
T0-60
2N3926
inductor 4312 020 36640
7z08
4312 020 36640
842 ic
Silicon Epitaxial Planar Transistor philips
cl 100 hie
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BSS59
Abstract: bss 97 transistor
Text: BSS59 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Verstärker und schnelle Schalter Applications: A m piifier and high speed switches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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BSS59
BSS59
bss 97 transistor
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BFS22A
Abstract: J22 transistor 27Z60 BFS22
Text: J b^E J> N AUER PHILIPS/DISCRETE bbS3^31 DDSÔ7BE Ifi? I IAPX BFS22A V.H.F. POWER TRANSISTOR N-P-N e p itaxia l planar tra n sisto r intended fo r use in class-A, B and C operated m obile, industrial and m ilita ry tra n s m itte rs w ith a supply voltage o f 13,5 V . The tra n sisto r is resistance stabilized. Every tra n
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BFS22A
BFS22A
J22 transistor
27Z60
BFS22
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TFK BC
Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:
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BC108
BC109
TFK BC
TFK 110
TFK 309
TFK 727
tfk 4 309
tfk 238
BC109
tfk bc108
BC107
TFK 330
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2N929
Abstract: 2N930 929-2N
Text: 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF am plifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorström en
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tr 2n2160
Abstract: 2N167 2N1471 2n1671a 2n2160 unijunction
Text: TYPES 2N1671, 2N1671A, 2N1671B. ¿mm P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L S 6 8 3 1 8 9 , O C T O B E R 1 9 6 2 - R E V t S E D M A Y 1 96 8 Designed for Medium-Power Switching/ Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance
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2N1671,
2N1671A,
2N1671B.
tr 2n2160
2N167
2N1471
2n1671a
2n2160
unijunction
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bly91a
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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7110fl2b
BLY91A
T-33-07
OT-48/2
bly91a
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tlk 94
Abstract: 2N2193 High Speed Switches C4752 tfk s 220
Text: 4M> Nicht für Neuentwicklungen Not for new developments 2 N 2193 'W Silizium-NPN-Epitaxial-Pianar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches
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BLY94
Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
Text: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran
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bbS3131
BLY94
OT-55.
Tmb-25
BLY94
vhf power transistor 50W
philips Trimmer 60 pf
transistor TT 2222
BLY94 application notes
BLY94 a
class D 50w
50w rf power transistor
sot55
SOT-55
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