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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 4 3 1 0 1 6 L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM, Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF 16-BIT uPD431016L /iPD431016L 44-pin PD4310161- jUPD431016L iiPD431016LLE:

    NEC B 536

    Abstract: VQH200
    Text: NEC iPD431016 65,536 x 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­ ory cells. It is suitable for cache memory and buffer


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    PDF uPD431016 536-word 16-bit /JPD431016 44-pin fiPD431016 HPD431016 pPD431016 NEC B 536 VQH200

    NEC B 536

    Abstract: 431016LLE
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF 431016L 64K-WORD 16-BIT uPD431016L /iPD431016L 44-pin 431016LLE-Al7 /JPD431016LLE-A20 091-oooi NEC B 536 431016LLE

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿ P D 431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT D e s c rip tio n The /iP D 431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits C M OS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.


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    PDF 16-BIT 431016L 44-pin //PD431016LLE-A17 iPD45 L42752S 008tooo2 G0L4327

    Untitled

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ¿¿PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n The ¿iPD431016 is a high speed, lo w power, 1 048 576 bits 65 536 w ords by 16 bits CMOS static RAM. The /jPD431016 are packed in 44-pin plastic SOJ. F e a tu re


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    PDF uPD431016 64K-WORD 16-BIT iPD431016 44-pin 091t8ool /XPD431016 PD431016. /PD431016LE:

    D431016LE

    Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
    Text: MOS INTEGRATED CIRCUIT juPD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /JPD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.


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    PDF uPD431016 64K-WORD 16-BIT /JPD431016 041t8 b427525 00b43G3 PD431016 431016LE 00b4304 D431016LE HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1

    Untitled

    Abstract: No abstract text available
    Text: SEC JJPD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations T he /JPD431016 is a 65,536-word by 16-bit static RAM fab ric a te d w ith advanced silicon-gate technology, unique CM O S peripheral circuits, and N-channel m em ­


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    PDF JJPD431016 16-Bit /JPD431016 536-word 16-bit 44-Pin 536-w

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.


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    PDF PD431016 64K-WORD 16-BIT PD431016 44-pin 005T347 b427525 PP431016 //PD431016.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.


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    PDF PD431016L 64K-WORD 16-BIT //PD431016L /iPD431016L 44-pin 431016LLE-A PD431016LLE-A20 /iPD431016L. /PD431016LLE:

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC blE ]> • NEC NEC Electronics Inc. bM27S25 003517b 201 « N E C E iPD431016 65,536 x 16-Bit Static CMOS RAM Description Pin Configurations The pPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology,


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    PDF bM27S25 003517b fiPD431016 16-Bit pPD431016 536-word 16-bit 44-Pin

    NEC 41-A 002

    Abstract: No abstract text available
    Text: JUPD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /JPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­


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    PDF JUPD431016 16-Bit /JPD431016 536-word 16-bit 44-Pin /L/PD431016 NEC 41-A 002

    d431016

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /xPD 431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n T h e /j P D 431016 is a high sp eed , low pow er, 1 048 576 bits 65 536 w o rd s by 16 b its C M O S static R A M . T h e ¿/PD431016 are packed in 44-pin p lastic S O J .


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    PDF 64K-WORD 16-BIT uPD431016 44-pin 091tg iPD431016. d431016