upd431016
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The µ PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
|
Original
|
PDF
|
PD431016L
16-BIT
PD431016L
44-pin
I/O16)
PD431016
PD431016L.
PD431016LLE:
upd431016
|
IC-8818
Abstract: IC-3243 PD431016 UPD431016LE-15 UPD431016LE-20 *D431016LE *D431016
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The µPD431016 is a high speed, low power, 1 048 576 bits 65 536 words by 16 bits CMOS static RAM. The µPD431016 are packed in 44-pin plastic SOJ. Feature
|
Original
|
PDF
|
PD431016
64K-WORD
16-BIT
PD431016
44-pin
I/O16)
PD431016LE-15
PD431016LE-17
PD4310rs.
IC-8818
IC-3243
UPD431016LE-15
UPD431016LE-20
*D431016LE
*D431016
|
PHOTOCOUPLER P112
Abstract: uPC151 IC 74157 74HC244 NEC p120 photocoupler UPD703017AGC 74HC244 NEC datasheet circuit diagram of MAX232 connection to pic L1652 27C1024
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
EMP7128
Abstract: ra8b M5237L nec 157c TLR124 UPD424260-70 ra5b max232 application CC112 CTLD8
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
|
Original
|
PDF
|
PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
|
HM27C4000G
Abstract: MC-422000AA64-60 103662-6002LCSC M3P00 CTLD8 MAX232 RS232 K1611 y318 K1615 uPD703102
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
V850E/MS1
PD703100
PD703101
PD703102
PD70F3102
U14214JJ1V0ANJ11
U14214JJ1V0AN00
1V850E/MS1.
HM27C4000G
MC-422000AA64-60
103662-6002LCSC
M3P00
CTLD8
MAX232 RS232
K1611
y318
K1615
uPD703102
|
ic stw 3208
Abstract: mc14054b "A 2169" c2pm2 UAA 146 222D-R C1pm1 A 2169 L1652 uPD703015B
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
V850/SA1TM
PD703014A
PD703014AY
PD703014B
PD703014BY
PD703015A
PD703015AY
PD703015B
PD703015BY
PD703017A
ic stw 3208
mc14054b
"A 2169"
c2pm2
UAA 146
222D-R
C1pm1
A 2169
L1652
uPD703015B
|
EMP7128
Abstract: pd424260 EMP7160-84FPGA CTLD8 PC151A WT-1 nec 44pin EMP7160 uPD70F3003A uPD70F3025A
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
V853TM
PD703003A
PD703003A
PD703004A
PD703025A
PD703025A
PD70F3003A
PD70F3003A
PD70F3025A
U12619JJ3V0AN003
EMP7128
pd424260
EMP7160-84FPGA
CTLD8
PC151A
WT-1
nec 44pin
EMP7160
uPD70F3003A
uPD70F3025A
|
D431000AGZ
Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Text: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is
|
Original
|
PDF
|
PD431000A
ThepPD431000A
576bits
vPD431OOOA
uPD431OOOA
32-pin
yPD431232L
013io
D431000AGZ
d431000a
UPD431OOOAGZ-7OLL-KKH
d431232
d431000ag
D431000
ypd431000a
D4310
d431000all
031T
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.
|
OCR Scan
|
PDF
|
PD431016
64K-WORD
16-BIT
PD431016
44-pin
005T347
b427525
PP431016
//PD431016.
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.
|
OCR Scan
|
PDF
|
PD431016L
64K-WORD
16-BIT
//PD431016L
/iPD431016L
44-pin
431016LLE-A
PD431016LLE-A20
/iPD431016L.
/PD431016LLE:
|
d431016
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /xPD 431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n T h e /j P D 431016 is a high sp eed , low pow er, 1 048 576 bits 65 536 w o rd s by 16 b its C M O S static R A M . T h e ¿/PD431016 are packed in 44-pin p lastic S O J .
|
OCR Scan
|
PDF
|
64K-WORD
16-BIT
uPD431016
44-pin
091tg
iPD431016.
d431016
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿ P D 431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT D e s c rip tio n The /iP D 431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits C M OS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.
|
OCR Scan
|
PDF
|
16-BIT
431016L
44-pin
//PD431016LLE-A17
iPD45
L42752S
008tooo2
G0L4327
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 4 3 1 0 1 6 L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The /PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM, Operating supply voltage is 3.3 V ± 0.3 V.
|
OCR Scan
|
PDF
|
16-BIT
uPD431016L
/iPD431016L
44-pin
PD4310161-
jUPD431016L
iiPD431016LLE:
|
|
|
D431016LE
Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
Text: MOS INTEGRATED CIRCUIT PD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /PD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.
|
OCR Scan
|
PDF
|
uPD431016
64K-WORD
16-BIT
/JPD431016
041t8
b427525
00b43G3
PD431016
431016LE
00b4304
D431016LE
HART3
d431016
IC-3243
MARKING TP NEC
431016LE-1
|
Untitled
Abstract: No abstract text available
Text: SEC PD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations T he /PD431016 is a 65,536-word by 16-bit static RAM fab ric a te d w ith advanced silicon-gate technology, unique CM O S peripheral circuits, and N-channel m em
|
OCR Scan
|
PDF
|
JJPD431016
16-Bit
/JPD431016
536-word
16-bit
44-Pin
536-w
|
NEC B 536
Abstract: VQH200
Text: NEC PD431016 65,536 x 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /PD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem ory cells. It is suitable for cache memory and buffer
|
OCR Scan
|
PDF
|
uPD431016
536-word
16-bit
/JPD431016
44-pin
fiPD431016
HPD431016
pPD431016
NEC B 536
VQH200
|
NEC B 536
Abstract: 431016LLE
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The /PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
|
OCR Scan
|
PDF
|
431016L
64K-WORD
16-BIT
uPD431016L
/iPD431016L
44-pin
431016LLE-Al7
/JPD431016LLE-A20
091-oooi
NEC B 536
431016LLE
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ÎPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V + 0.3 V.
|
OCR Scan
|
PDF
|
uPD431016L
16-BIT
JUPD431016L
44-pin
uPD431016LLE-A17
uPD431016LLE-A20
PD431016L
|
32 PIN
Abstract: No abstract text available
Text: Low Power SR A M Selection Guide 1/ 2 Maximum supply current Access time Capacity Organization Version Part number Operating Standby |mA| (j/A) Data14”*“1 retention (/»A) 70 (70 ns. 85 ns. 100 ns) 100 15 CZ: 32-pin DIP (600mil). GW: 32-pin SOP <525mii)
|
OCR Scan
|
PDF
|
uPD431000A
32-pin
600mil)
525mii)
525mil)
32 PIN
|
Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC blE ]> • NEC NEC Electronics Inc. bM27S25 003517b 201 « N E C E PD431016 65,536 x 16-Bit Static CMOS RAM Description Pin Configurations The PD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology,
|
OCR Scan
|
PDF
|
bM27S25
003517b
fiPD431016
16-Bit
pPD431016
536-word
16-bit
44-Pin
|
NEC 41-A 002
Abstract: No abstract text available
Text: PD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /PD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem
|
OCR Scan
|
PDF
|
JUPD431016
16-Bit
/JPD431016
536-word
16-bit
44-Pin
/L/PD431016
NEC 41-A 002
|
