D431000AGZ
Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Text: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is
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PD431000A
ThepPD431000A
576bits
vPD431OOOA
uPD431OOOA
32-pin
yPD431232L
013io
D431000AGZ
d431000a
UPD431OOOAGZ-7OLL-KKH
d431232
d431000ag
D431000
ypd431000a
D4310
d431000all
031T
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NEC B 536
Abstract: VQH200
Text: NEC fiPD431016 65,536 x 16-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem ory cells. It is suitable for cache memory and buffer
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uPD431016
536-word
16-bit
/JPD431016
44-pin
fiPD431016
HPD431016
pPD431016
NEC B 536
VQH200
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC blE ]> • NEC NEC Electronics Inc. bM27S25 003517b 201 « N E C E fiPD431016 65,536 x 16-Bit Static CMOS RAM Description Pin Configurations The pPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology,
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bM27S25
003517b
fiPD431016
16-Bit
pPD431016
536-word
16-bit
44-Pin
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NEC 41-A 002
Abstract: No abstract text available
Text: JUPD431016 65,536 X 16-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /JPD431016 is a 65,536-word by 16-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem
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JUPD431016
16-Bit
/JPD431016
536-word
16-bit
44-Pin
/L/PD431016
NEC 41-A 002
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