SP5630
Abstract: No abstract text available
Text: ^EDI ED I8L24512V 512KX24 SRAM Module ELECTRONIC DESIGNS, INC Preliminary 512KX24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available w ith access tim es of 12,
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I8L24512V
512KX24
I8L24512V
5630x
ca-40
EDI8L24512V15AC
EDI8L24512V17AC
EDI8L24512V20AI
SP5630
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5630x
Abstract: 512Kx2
Text: m E D I8 L 2 4 5 1 2 V x 512Kx24 SRAM Module ELECTRONIC DESIGNS. INC Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • SRAM. The device is available w ith access tim es of 12,
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512Kx24
5630x
M0-47AE
EDI8L24512V
EDI8L24512V
-40Cto
EDI8L24512V12AC
EDI8L24512V15AC
5630x
512Kx2
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JEDECMO-47AE
Abstract: No abstract text available
Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution • ADSP-21060L SHARC • ADSP-21062L (SHARC) • TMS320LC31 The ED I8L32512V is a high speed, 3.3V, 16 m egabit SRAM . The device is available w ith access tim es of 12,
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I8L32512V
512Kx32
ADSP-21062L
I8L32512V
ADSP-21060L
TMS320LC31
MPC860
S320LC
EDI8L32512V
JEDECMO-47AE
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