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    Infineon Technologies AG IPT007N06NATMA1

    MOSFET N-CH 60V 300A 8HSOF
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    DigiKey IPT007N06NATMA1 Digi-Reel 11,059 1
    • 1 $6.88
    • 10 $4.648
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    • 1000 $2.92188
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    IPT007N06NATMA1 Cut Tape 11,059 1
    • 1 $6.88
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    IPT007N06NATMA1 Reel 10,000 2,000
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    Avnet Americas IPT007N06NATMA1 Ammo Pack 16 Weeks, 3 Days 1
    • 1 $6.7
    • 10 $4.9
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    IPT007N06NATMA1 Reel 18 Weeks 2,000
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    Mouser Electronics IPT007N06NATMA1 6,848
    • 1 $6.62
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    Verical IPT007N06NATMA1 6,000 2,000
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    IPT007N06NATMA1 3,730 5
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    IPT007N06NATMA1 612 2
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    IPT007N06NATMA1 16 2
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    Arrow Electronics IPT007N06NATMA1 6,000 18 Weeks 2,000
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    IPT007N06NATMA1 Cut Strips 612 18 Weeks 1
    • 1 $6.507
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    • 100 $3.287
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    IPT007N06NATMA1 16 18 Weeks 1
    • 1 $6.5041
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    Newark IPT007N06NATMA1 Cut Tape 2,096 1
    • 1 $4.03
    • 10 $3.69
    • 100 $3.41
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    IPT007N06NATMA1 Reel 2,000
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    Rochester Electronics IPT007N06NATMA1 348,975 1
    • 1 $3.25
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    TME IPT007N06NATMA1 1
    • 1 $6.69
    • 10 $5.77
    • 100 $4.02
    • 1000 $3.74
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    Chip One Stop IPT007N06NATMA1 Cut Tape 3,730
    • 1 $5.07
    • 10 $3.54
    • 100 $3.46
    • 1000 $3.13
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    Chip-Germany GmbH IPT007N06NATMA1 77
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    EBV Elektronik IPT007N06NATMA1 280,000 19 Weeks 2,000
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    New Advantage Corporation IPT007N06NATMA1 212,000 1
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    Win Source Electronics IPT007N06NATMA1 26,680
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    • 100 $1.8929
    • 1000 $1.6225
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    Infineon Technologies AG IPT017N12NM6ATMA1

    MOSFETs TRENCH >=100V
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    Mouser Electronics IPT017N12NM6ATMA1 8,050
    • 1 $6.96
    • 10 $4.83
    • 100 $3.84
    • 1000 $3.38
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    Infineon Technologies AG IPTG007N06NM5ATMA1

    MOSFETs TRENCH 40<-<100V
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    Mouser Electronics IPTG007N06NM5ATMA1 5,644
    • 1 $6.54
    • 10 $4.69
    • 100 $3.55
    • 1000 $3.41
    • 10000 $3.4
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    Infineon Technologies AG IPT007N06N

    MOSFETs TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPT007N06N 5,533
    • 1 $6.36
    • 10 $5.34
    • 100 $4.32
    • 1000 $3.46
    • 10000 $2.93
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    ComSIT USA IPT007N06N 1,529
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    Win Source Electronics IPT007N06N 28,900
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    • 100 $1.8929
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    Infineon Technologies AG IPT067N20NM6ATMA1

    MOSFETs TRENCH >=100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPT067N20NM6ATMA1 3,964
    • 1 $9.14
    • 10 $6.43
    • 100 $4.87
    • 1000 $4.71
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    I PT 0 0 7N 0 6 N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPT007N06NATMA1 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300A 8HSOF Original PDF

    I PT 0 0 7N 0 6 N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01116 (XN1116) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu


    Original
    2002/95/EC) XN01116 XN1116) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH50N120C3 High speed PT IGBTs for 20 - 50 kHz switching 1200V 50A 4.2V 64ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IC110 IXGH50N120C3 O-247 50N120C3 PDF

    IXGH50N120C3

    Abstract: 50N120C3 MJ-2035 g50n
    Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH50N120C3 High speed PT IGBTs for 20 - 50 kHz switching 1200V 50A 4.2V 64ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    IC110 IXGH50N120C3 O-247 50N120C3 IXGH50N120C3 MJ-2035 g50n PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID 01E STATE Optoelectronic S p ecificatio n s- HARRI S SEIHCOND 19642 D - T4I-M SECTOR 37E D M 43G2E71 G0271QM Infrared Emitter T • 1N 6264 1N6264,1N6265 Gallium Arsenide Infrared — Em itting Diode T T he G E Solid State 1N6264 and 1N6265 Series are gallium arsenide, light


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    43G2E71 G0271QM 1N6264 1N6265 1N6265 PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISIO NS A J DNEN90N5 ARE IN INCHES FIG. 1 -0 1 : ONE PLACE DECIMALS: ± .1 TWO PLACE DECIMALS: ± .01 THROUGH HOLE - N O. OF POS. x .0787 [2.00] ± .005 [.13] (SEE NOTE 7) DO NO T SCALE FROM THIS P R IN T X 2 mm - - < L - 01 : IN PROCESS SM M -XX-D-S m m -m -n -n


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    DNEN90N5 5-21-si PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 I 4 5 AP PR O V ED : DATE: _ TITLE: n cq 2,54 ! 'ten* W vD CD CO Ö 3 P IN BRASS 1 G OLD 2 IN S U L A T O R TEFLO N' 1 NONE 1 BO DY BRASS 1 G O LD NO. D E S C R IP T IO N M A T E R IA L Q ’T Y F IN IS H 6 5 ö T 0L 4 -Key I A lM T description 5217


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    JRF2-27-T-00-5Ã PDF

    d4b-3a13n

    Abstract: 7N66
    Text: H e a vy -D u ty, P o s itiv e - O p e n in g C o n t a c t s Lim it S w it c h D4B-BN Features • Direct-opening contacts ■ Enclosure rating meets IP67 and NEMA 3, 4 , 4X, 6P and 13 ■ International approvals: IEC 947-5-1, EN60947-5-1, UL 508, CSA C22-2 No. 14, VDE 0660 Part 200 snap action type


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    EN60947-5-1, C22-2 4B-3117N d4b-3a13n 7N66 PDF

    Q300

    Abstract: A600 GLLC01C
    Text: F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER GLLC01C REV DOCUMENT B 0016843 CHANGED KRB BY 0 7N O V 05 CHECK RJ N O M IN A L T R A V E LS Item s PLATED COPPER ALLOY 010 .393 -10 (.393) B OF (max) fOoeratina force) RF (min) (Release force) PT (max) (Pre-Travet)


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    GLLC01C 07NOVQ5 75mm2- 18MAY05 5M-1994 Q300 A600 GLLC01C PDF

    Untitled

    Abstract: No abstract text available
    Text: □ RAW ING No,:- P 2 5 - H SHEET PROBE 2 OF 2 HEAD IF IN DOUBT AST NOT TO S C A L E THIRD A N G LE PR O JECT IO N VARIANTS 9G° NO, HARWIN PART NO, P25-1ÜB P25-Ü5B NO, CD fJD OR Pi E R HARWIN PART NO, CODE: 02 , 00 - P253- CD P2P—HU B P25-Q1B S P E C IF IC A T IO N S :


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    150ql P25-1 P253- P25-Q1B P25-2GB P25-3GB PDF

    Untitled

    Abstract: No abstract text available
    Text: 90779— SHADED AREA DENOTES POSITION OF COLOUR CODED HOT STAMP MOULD BASE COLOUR: NATURAL 10 20 <29.18 /1.149 24.13I/.950 (27.73)/1.092 (29.64)/1.167 -••08 18 (26.641/1.049 (2 1.59I/.850 (25.191/ .992 (27.10)/1.067 19 — .07 16 (24.10)/ .949 (19.05)/.750


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: jkM SPECIFICATION • F L O A T I N G D I S T A N C E :FOR R A D I U S ± 0 . 5mm A ■7 D — T< ±0. 5 N O T E . D O NOT ADD LOAD TO A F L OA TI NG äE. 7n—r-f PART. fciDa.&v'T*T$K APPLICABLE WIRE S E M I - F L E X I B L E C O A X I A L CA B L E 0.14 W


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    CF2C004DA2 F2C004DA2 PDF

    LA 3840

    Abstract: No abstract text available
    Text: NOTES: 1. HOUSING MATL. PO LYESTER PBT 15% GLASS FILLED 2. TER. MATL. BRASS 0.281/.0 11 THK PLATING. TIN: ( l.27um /50u" MIN NICKEL UNDER (4-6um )/I60-240U" TIN 3. 4. 5. G. 7. TO UL 94 V-0, BLACK. APPL. CLASS TO DIN 40040 HME (-25°C/+I00°C) PIN PUSH FORCE MIN 7N


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    /I60-240U" 006THK S0718-102 SPA-90718 LA 3840 PDF

    30271

    Abstract: No abstract text available
    Text: 10 MOULD BA SE COLOUR! NATURAL 90779-*0l3 26 36.801/1.449 (31.751/1.250 (35.351/1.392 (37.261/1.467 14 1 -*012 24 (34.261/1.349 (29.211/1.150 (32.811/1.292 (34.721/1.367 15 -*011 22 (31.721/1.249 (26.671/1.050 (30.271/1.192 (32.181/1.267 16 -.0 10 20 (29.181/1.149


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    SDA-90779 30271 PDF

    Diode C540

    Abstract: C540 DIODE HD74HC541
    Text: HD74HC540,HD74HC541 The HD 74HC540 is an inverting buffer and the HD74HC541 | is a non-inverting buffer. The 3-state control gate operates ^ as a two-input NO R such that if either G- or G 2 are high, # Octal Buffers/Lin e Drivers with 3-state outputs) PIN ARRANGEMENT


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    HD74HC540 HD74HC541 HD74HC541 Diode C540 C540 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: F /M F100179 Carry Lookahead Generator R C H IU 3 A S c h lu m b e rg e r C o m p a n y F100K ECL Product Description The F100179 is a high-speed Carry Lookahead Generator intended for use with the F100180 6-bit fast Adder and the F100181 4-bit ALU. Pin Names


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    F100179 F100K 24-Pln F100180 F100181 F100179 14K13) 19M24) PDF

    Untitled

    Abstract: No abstract text available
    Text: DWG NO: REVISIONS I AD I FIG. -0 1 : 1 ONE PLACE DECIMALS; ± .1 TWO PLACE DECIMALS: ± .01 THROUGH HOLE THREE PLACE DECIMALS: ± .0 0 5 FOUR PLACE DECIMALS: ± .0 0 2 0 - N O . OF POS. x .0 7 8 7 [2 .0 0 ] ± ,0 0 5 [.1 3 ] - 2 mm ANGLES ± H S O C K E T STRIP


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CRETE /O PT O} TT D01t>ñ?ñ 3 1 ~ 9097250 TOSHIBA DISCRETE/OPTO tfoihihn 99D 16878 TOSHIBA SEMICONDUCTOR FIELD EFFECT D _r-3(^-t3 TRANSISTOR Y T F 6 A 1 S I L I C O N -N C H A N N E L M O S TECHNICAL DATA TYPE ( % -m o s n ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    250uA 00A/ps PDF

    Untitled

    Abstract: No abstract text available
    Text: 9 2 NOTES: j 1. HOUSING MATL. POLYESTER PBT 15% GLASS FILLED TO UL 94 V-0, BLACK. 2. TER. MATL. BRASS 0.28 /.0 11 THK PLATING. TIN: (l.2 7u m )/50 u" MIN NICKEL UNDER ( 4 - 6 u m ) / I6 0 - 2 4 0 U " TIN 3. APPL. CLASS TO DIN 40040 HME C-25°C/+ I00°C) 4. PIN PUSH FORCE MIN 7N


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    006THK SDA-90715 PDF

    G2JS

    Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
    Text: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7


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    2SC4550 2SC4550 PWS300 D15596JJ2V0DS00 G2JS Immo transistor t 2190 U/25/20/TN26/15/850/G2JS PDF

    592p

    Abstract: berg plcc 7d8l 2E-1D
    Text: A B C NOTE: 6 8 POSITION S O C K E T SHOWN NEW RELEASE ADDED BERG PART NUMBER TO TABLE CHANGED INSERTION & WITHDRAWAL FORCE VALUES & WEIGHTS ON ALL PLCC SIZES 576 2048 2096 10 /1 4 /9 2 6 /2 7 /9 5 8 /4 /9 5 PCB LAYOUT PLCC B. D E A SY 10/5/92 PLCC— [ ]P — T


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    PDF

    PC4061

    Abstract: TL061 PIN CONFIGURATION TL061 TL061D
    Text: NEC NEC Electronics Inc. juP C 4061 J -F E T IN P U T L O W -P O W E R O P E R A T IO N A L A M P L IF IE R P R E L IM IN A R Y IN F O R M A T IO N D e s c r ip t io n P in C o n f ig u r a t io n T he jjPC4061 is a J-FE T in p u t lo w -p o w e r ope ra tio n al


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    uPC4061 /PC4081 //PC4061 PC4061 TL061 PIN CONFIGURATION TL061 TL061D PDF

    DIP20

    Abstract: TSSOP14 TSSOP16 196-M
    Text: [ 1 5 ] fâlI'É7~‘—£ TOSHIBA U W ft 6ooc n m m fît i t m Psi & Pt m* h Ea = 0.8eV (pcs) 60°C (Fit) 17660 1 8 6 1 .2 3 x 1 0 6 6 2.3 & m m ft Ta = 125°C V c c = 6V is] >m ¡£ ÍÍE -f y 7 Ta = 125°C V c c = 6V Ta = 150°C V c c = 6V IS] /im fa


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    23x106 IIS/W77 DIP14 DIP16 DIP20 20lWifcE 10WMM 105Pa DIP20 TSSOP14 TSSOP16 196-M PDF

    R1200

    Abstract: R1200F R2500 R5000 R5000F
    Text: SEP ELECTRONIC CORP 24E D • ~OS 000DDS3 D ■ R1200 thru R5000 R1200F thru R5000F HIGH VOLTAGE RECTIFIER VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Amperes R12 0 0 -2 0 0 0 R 2 5 0 0 -5 0 0 0 DO-15 R 2 5 0 0 -5 0 0 0 ' DO-41 (R12 0 0 -2 0 0 0 ) FEATURES


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    14t7flt. 00DQDE3 R1200 R5000 R1200F R5000F R1200-2000 R2500â DO-41 R1200-2000) R2500 R5000F PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-736A Z Rev. 1.0 Feb. 7, 1997 Description The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117405)


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    HB56U832 HB56U432 608-word 32-bit 304-word ADE-203-736A 16-Mbit HM5117405) PDF