nec 2561 equivalent
Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such
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CDMA450
Abstract: dr600
Text: Advanced Datasheet Ver. 03 SAW Bandpass Filter F4623 Features z RF bandpass filter for CDMA450 Rx. Part z Usable bandwidth 5MHz 460.0 MHz ~ 465.0 MHz z High attenuation z No matching single-balanced operation ( single 50Ω / balance 100Ω ) z Ceramic Surface Mounted Device Package ( 3.0 mm x 3.0mm )
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F4623
CDMA450
300mm/min
DR6001-PS03
dr600
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CDMA450
Abstract: 1-6732
Text: SAW Bandpass Filter F4621 Features z RF bandpass filter for CDMA450 C-Band Rx. Part z Usable bandwidth 5MHz 460 MHz ~ 465 MHz z High attenuation z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device Package ( 3.8 mm x 3.8 mm ) z RoHS compliant
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F4621
CDMA450
300mm/min
NR3017-AS02
1-6732
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MB90F462A
Abstract: MB90F463 MB90F463A MB90460 MB90467 MB90F462 F2MC-16LX LQFP-64 MB90F462AP-SH DS07-13714-2E
Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-13714-2E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460/465 Series MB90462/467/F462/F462A/F463A/V460 • DESCRIPTION The MB90460/465 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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DS07-13714-2E
16-bit
F2MC-16LX
MB90460/465
MB90462/467/F462/F462A/F463A/V460
MB90F462A
MB90F463
MB90F463A
MB90460
MB90467
MB90F462
LQFP-64
MB90F462AP-SH
DS07-13714-2E
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-13714-2E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460/465 Series MB90462/467/F462/F462A/F463A/V460 • DESCRIPTION The MB90460/465 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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DS07-13714-2E
16-bit
F2MC-16LX
MB90460/465
MB90462/467/F462/F462A/F463A/V460
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H1061
Abstract: DIP-64P-M01 F2MC-16LX FPT-64P-M06 FPT-64P-M09 MB90460 MB90F462 MB90V460 QFP-64 SDIP-64
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13714-1E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460 Series MB90462/467/F462/V460 • DESCRIPTION The MB90460 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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DS07-13714-1E
16-bit
F2MC-16LX
MB90460
MB90462/467/F462/V460
H1061
DIP-64P-M01
FPT-64P-M06
FPT-64P-M09
MB90F462
MB90V460
QFP-64
SDIP-64
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H1061
Abstract: QFPM06
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13714-1E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460 Series MB90462/467/F462/V460 • DESCRIPTION The MB90460 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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DS07-13714-1E
16-bit
F2MC-16LX
MB90460
MB90462/467/F462/V460
F0112
H1061
QFPM06
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hitachi sr 302
Abstract: No abstract text available
Text: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x
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HM514100JP/ZP-7--------------------
304-Word
HM51440QJP
HM514100
20-pin
CP-20DA)
hitachi sr 302
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Untitled
Abstract: No abstract text available
Text: IBM13M32734BCA 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM ; ; | DIMM CAS Latency i fCK iW : • • • • • • • -75A Reg4 I i Units | | Clock Frequency
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IBM13M32734BCA
168-Pin
32Mx72
100MHz
133MHz
19L7297.
F38442A
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MOSFET IRF460
Abstract: IRF460 irf462
Text: 4302571 □DS3cî7a 413 • H A R R I HAS S I R F 4 6 0 I R F 4 6 2 N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E • 21A and 19A, 500V B O TTO M VIE W • rD S °n = 0 -2 7 0 and 0 .3 5 fl • Single Pulse Avalanche Energy Rated
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43G2271
MOSFET IRF460
IRF460
irf462
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A933A
Abstract: No abstract text available
Text: Preliminary PC133 Synchronous DRAM - 64Mb, 256Mb Features Multiple Burst Read with Single Write Option • High Performance: ! ! -75 D, CL=3 I I -75A, C L= 3 Automatic and Controlled Precharge Command U nits Data Mask for Read/Write control fc K C lo c k F re q u e n c y
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PC133
256Mb
cycles/64ms
256Mb
A933A
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25CC
Abstract: P4C163 P4C163L
Text: PERFORMANCE SEMI CONDUCTOR 20E D • 7 0 b 2 5 e! 7 00005b3 P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS T 3 ^ - a ■ s - i a FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 |iA Typical Current Common I/O Full CMOS, 6T Cell
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70b2Si?
P4C163/P4C163L
P4C163L
28-Pln
28-Pnd
-17PC
-20PC
-25PC
-35PC
25CC
P4C163
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m5m5110
Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
Text: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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754S40
MSM511001RS/JS/ZS
576-WORD
MSM511001
18-pin
MSM511001-10
MSM51100P
L72424D
0D041Ã
m5m5110
MSM511001-12
T-46
OGD41
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Untitled
Abstract: No abstract text available
Text: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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576-WORD
MSM511001
18-pin
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T1IS
Abstract: GQQ0731 ragy 3530114
Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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EDI8F8512C/LP/P
512Kx8
EDI8F8512C/LP/P
4096K
128Kx8
28Kx8
G0G0734
T-46-23-14
353011M
T1IS
GQQ0731
ragy
3530114
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ah rzj
Abstract: MSM511002-10 MSM511002-12
Text: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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CI11SI
MSM511002RS/JS/ZS
576-WQRD
MSM511002
18-pin
MSM511002-10
MSM511002-12
ah rzj
MSM511002-10
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D65806
Abstract: 9215K1
Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-MICRON
xPD65800
D65806
9215K1
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IRMT
Abstract: F4620 SO DIMM DRAM 144 Pin Connector Pinout
Text: IBM13M16734BCA P relim inary 16M X 72 1-B ank R egistered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM ! -75 A Reg. DIMM CAS Latency • • • • • • • i Clock Cycle tAC \ Clock Access Tim e
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IBM13M16734BCA
168-Pin
16Mx72
133MHz
A14-4716-01-b
IRMT
F4620
SO DIMM DRAM 144 Pin Connector Pinout
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MB81C78A-35
Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Text: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory
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0G1B77S
MB81C78A-35/-45
64K-BIT
MB81C78A
T-46-23-12
MB81C78A-35
MB81C78A-45
C-28P-
C28054S-1C
MB81C78A-35
ICE 47E
fujitsu 1988
IP-28P-M
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Mostek 2716
Abstract: CMOS-440
Text: S G S-THOHSON a?» 87D 10299 T T | Dr 7 ^ 2 3 7 □ G lD H T 'i f-46-23-12 FEATURES □ Predicted worst case battery life of 11 years @ 70°C □ Data retention in the absence of power □ Data security provided by automatic write protection during power failure
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f-46-23-12
MK48Z02/12)
MK48Z03/13)
CMOS-440
24-Pin
MK48Z02/03
MK48Z12/13
T-46-23-12
Mostek 2716
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8251a usart interface from z80
Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn
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L4E75BS
80C42H
D043fl23
8251a usart interface from z80
UDL TM 500
f922
verilog code for 8254 timer
l912
256x32
POWER MODULE TM 31
udl 500
78K3
F5S4
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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iPD658xx
transistor f422
transistor f423
F422 transistor
transistor f421
nec product naming rule
BK-DK
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bv0T
Abstract: 658X
Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4E75S5
QQ3T701
nPD658xx
bv0T
658X
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transistor f422
Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high
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xPD658xx
transistor f422
transistor f423
BKDF
f422 transistor
B00J
f422
F423
fet 13187
RJ4B
ru4f
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