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    I/SOT23 JEDEC STANDARD 178 AB Search Results

    I/SOT23 JEDEC STANDARD 178 AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    I/SOT23 JEDEC STANDARD 178 AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic


    Original     		PDF CM1218 CM1218 CM1218/D

    Untitled

    Abstract: No abstract text available
    Text: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic


    Original     		PDF CM1218 MIL-STD-883D OT23-3 419AH CM1218/D

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    DVD player with usb circuit diagram

    Abstract: 320 sot236 CM1223-04SO Marking L2 Packaging SOT23-6 d337 diode marking L2 SOT23 6 zener D335 A0 SOT23-6
    Text: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting


    Original     		PDF CM1223 CM1223/D DVD player with usb circuit diagram 320 sot236 CM1223-04SO Marking L2 Packaging SOT23-6 d337 diode marking L2 SOT23 6 zener D335 A0 SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 OT-23 OT-223 MPSA64

    1937 sot23

    Abstract: No abstract text available
    Text: DBV 6 DBV 5 YEQ, YZQ TPS793xx www.ti.com SLVS348K – JULY 2001 – REVISED OCTOBER 2007 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23 FEATURES DESCRIPTION 1 • 200mA RF Low-Dropout Regulator


    Original     		PDF TPS793xx SLVS348K 200mA TPS793xx 1937 sot23

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    zener D335

    Abstract: Marking L2 Packaging SOT23-6 Marking X1 SOT23-6 X130 SOT23-5 marking L2 SOT23-6 Zener diode sot23-5 sot23-6 marking code 013 Marking L2 Packaging SOT23-5
    Text: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting


    Original     		PDF CM1223 CM1223/D zener D335 Marking L2 Packaging SOT23-6 Marking X1 SOT23-6 X130 SOT23-5 marking L2 SOT23-6 Zener diode sot23-5 sot23-6 marking code 013 Marking L2 Packaging SOT23-5

    zener D335

    Abstract: No abstract text available
    Text: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description http://onsemi.com The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting


    Original     		PDF CM1223 CM1223 CM1223/D zener D335

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor

    712 DIODE marking sot23

    Abstract: 712 SOT23
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 OT23W 712 DIODE marking sot23 712 SOT23

    TVS SOT23 712

    Abstract: CDSOT23-SM712 712 sot23
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 OT23W TVS SOT23 712 712 sot23

    CDSOT23-SM712

    Abstract: 712 sot23
    Text: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS Compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 712 sot23

    bel 188 transistor

    Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223 bel 188 transistor MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D

    TVS SOT23 712

    Abstract: 712 DIODE marking sot23 SM712 CDSOT23-SM712 712 sot23
    Text: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS Compliant* Working peak voltage 7 V or 12 V ESD protection >40 kV Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 – Surface Mount TVS Diode


    Original     		PDF RS485 CDSOT23-SM712 CDSOT23-SM712 TVS SOT23 712 712 DIODE marking sot23 SM712 712 sot23

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223

    bel 188 transistor

    Abstract: SOT23 1128 of bel 188 transistor
    Text: MMBTA28 PZTA28 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol


    Original     		PDF MPSA28 MMBTA28 PZTA28 MPSA28 MMBTA28 OT-23 OT-223 bel 188 transistor SOT23 1128 of bel 188 transistor

    bel 188 transistor

    Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBTA14 PZTA14 OT-23 OT-223 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    MPSA56

    Abstract: bel 188 transistor pnp 4963N CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
    Text: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA56 PZTA56 OT-23 OT-223 MPSA56 bel 188 transistor pnp 4963N CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56

    CBVK741B019

    Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 CBVK741B019 F63TNR MMBTA42 MPSA42 PN2222N PZTA42

    sot 223 fairchild

    Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMBTA92 PZTA92 OT-23 OT-223 sot 223 fairchild sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92

    ic 3843

    Abstract: PZTA06 SOT-223 CBVK741B019 F63TNR MMBTA06 MPSA06 PN2222N PZTA06 SOT23 JEDEC standard orientation pad size MPSA06 fairchild transistor
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA06 PZTA06 OT-23 OT-223 ic 3843 PZTA06 SOT-223 CBVK741B019 F63TNR MMBTA06 MPSA06 PN2222N PZTA06 SOT23 JEDEC standard orientation pad size MPSA06 fairchild transistor

    Marking L2 Packaging SOT23-6

    Abstract: L242 TOP marking sot23-6 MARKING X1 SOT23-6 20 sot23-6 esd marking L2 SOT23 6 L242 3000 L243 marking L2 SOT23-6 X1 SOT23-6
    Text: CM1224 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1224 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting


    Original     		PDF CM1224 CM1224/D Marking L2 Packaging SOT23-6 L242 TOP marking sot23-6 MARKING X1 SOT23-6 20 sot23-6 esd marking L2 SOT23 6 L242 3000 L243 marking L2 SOT23-6 X1 SOT23-6