HY29F002
Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Text: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current
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HY29F002
S-128
HY29F002
29F002T
hyundai tv hy 22 f circuit
29F002
HY29F002T
PDIP32
PLCC32
TSOP32
hyundai tv circuits
P55i
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Untitled
Abstract: No abstract text available
Text: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current
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HY29F080
S-128
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29F080
Abstract: HY29F080T90 1N3064 HY29F080 PSOP44 7915 full pack hyundai tv hy 22 f circuit 3611-1
Text: HY29F080 Series 8 Megabit 1M x 8 , 5-volt Only, Flash Memory KEY FEATURES n 5-Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as low as 55 ns n Low Power Consumption – 15 mA typical active read current
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HY29F080
S-128
HY29F080
29F080
HY29F080T90
1N3064
PSOP44
7915 full pack
hyundai tv hy 22 f circuit
3611-1
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29F080
Abstract: yura hyundai tv hy 22 f circuit 1N3064 HY29F080 PSOP44
Text: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current
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Original
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HY29F080
S-128
29F080
yura
hyundai tv hy 22 f circuit
1N3064
HY29F080
PSOP44
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PDF
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Untitled
Abstract: No abstract text available
Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current
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HY29F040A
r-61400755
S-128
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29F040A
Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current
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Original
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HY29F040A
S-128
29F040A
hyundai HY29F040A
1N3064
HY29F040A
PLCC32
TSOP32
hyundai tv circuits
HY29F040AT
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PDF
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hyundai HY29F040A
Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current
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Original
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HY29F040A
S-128
hyundai HY29F040A
29f040a
1N3064
HY29F040A
PLCC32
TSOP32
hyundai tv circuits
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PDF
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programming 29F400
Abstract: PSOP44
Text: HY29F400 4 Megabit 512K x 8/256K x 16 , 5V Only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F400
8/256K
S-128
programming 29F400
PSOP44
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PDF
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programming 29F400
Abstract: HY29F400 PSOP44 29f400 psop
Text: HY29F400 4 Megabit 512Kx8/256Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte
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Original
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HY29F400
512Kx8/256Kx16)
S-128
programming 29F400
HY29F400
PSOP44
29f400 psop
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PDF
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programming 29F400
Abstract: HY29F400 PSOP44 programming 29F400 PSOP
Text: HY29F400 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte
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Original
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HY29F400
512Kx8/256Kx16)
S-128
programming 29F400
HY29F400
PSOP44
programming 29F400 PSOP
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PDF
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HY29F800b
Abstract: HY29F800TT90 29F800 equivalent 29f800
Text: HY29F800 8 Megabit 1M x 8/512K x 16 , 5V Only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F800
8/512K
S-128
HY29F800b
HY29F800TT90
29F800 equivalent
29f800
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PDF
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HY29F800
Abstract: PSOP44 HY29F800TT90 DQ021
Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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Original
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HY29F800
1Mx8/512Kx16)
S-128
HY29F800
PSOP44
HY29F800TT90
DQ021
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PDF
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HY29F800TT-90
Abstract: hy29f800tt HY29F800 PSOP44 29F800 code
Text: HY29F800 8 Megabit 1M x 8/512K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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Original
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HY29F800
8/512K
S-128
HY29F800TT-90
hy29f800tt
HY29F800
PSOP44
29F800 code
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PDF
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Untitled
Abstract: No abstract text available
Text: ‘ HYUNDAI HYM532220A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast Page mode CMOS ORAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin giass-epoxy printed circuit board. 0.22nFdecoupling
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HYM532220A
32-bit
HY5117800B
22nFdecoupling
HYM532220AE/ASLE/ATE/ASLTE
HYM532220AEG/ASLEG/ATEG/ASLTEG
l25f3
17lMIN.
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hyundai tv hy 22 f circuit
Abstract: c 144 ESS HYM5C9256
Text: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin
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OCR Scan
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M421202A-APR91
HYM5C9256
HY53C256LF
22jiF
HYM5C9256M
HYM5C9256P
HYM5C9256-70
HYM5C9256-80
HYM5C9256-10
HYM5C9256-12
hyundai tv hy 22 f circuit
c 144 ESS
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Untitled
Abstract: No abstract text available
Text: " H Y U N D A I ” • Il H li fl • H Y 6 7 V 3 2 1 0 0 /1 0 1 32K X 32 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 32K x 32 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge
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5ns/10ns/13
5ns/15ns
75MHz
1DH09-11-MAY95
67V32100/101
HY67V32100TQ
HY67V32101TQ
100pin
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CRL4
Abstract: s8100
Text: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10
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G0003flfl
M431201B-APR91
HYM581000
HY531000J
HYM581000M
HYM581000P
HYM581000-60
S81000-70
YM581000-80
36l--
CRL4
s8100
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PDF
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HYM591000M
Abstract: No abstract text available
Text: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine
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OCR Scan
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75Gfifi
HYM591000
591000M
HYM591000M
HY531000J
HYM591000
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PDF
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also
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HY29F040
1FA02-11-MAY
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption
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OCR Scan
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HY29F800
8/512K
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current
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OCR Scan
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HY29F080
S-128
HY29F080
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PDF
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C551
Abstract: HY29F040A P55i
Text: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Com patible with JEDEC-Standard Comm ands
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OCR Scan
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HY29F040A
32-Pin
HY29F040A
C551
P55i
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY2BFD4D Series _ 512K II B-bit CMOS 5V/12V, Buoi Bloch Flash Mwnory Preliminary DESCRIPTION The HY2BFD40 b o o l b lo ck flash m em ory is a very high performance 4 M bit m em ory organized as 512 Mbytes ol B bits each. Seven separately erasable blocks including a Hardware-Lockable boat b lo ck | 15,304 byTBs"J7two
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V/12V,
HY2BFD40
HYZBF040-90
HYZBF040-120
1FAD1-11-MAY
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EV02
Abstract: No abstract text available
Text: “HYUNDAI HY51 V65164,HY51 V64164 4M x 16-bit CMOS DRAM with Extended Data Out PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION T his 'a m ily is a 64M bit dynam ic RAM organized 4,194 304 x 16-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data O ut mode
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V65164
V64164
16-bit
HY51V64164TC
HY51V64164LJC
HY51V64164SLTC
HY51V65164TC
Y51V65164LTC
5164W
EV02
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