TAA 691
Abstract: No abstract text available
Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASU
HY5116400Ã
HY5116400ASLT
TAA 691
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HYUNDAI i10
Abstract: ha1930 HYM5V64414
Text: "HYUNDAI HYM5V64414A N-Series 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V17404A in 24/28 pin SOJ or TSOR-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.
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HYM5V64414A
64-bit
HY51V17404A
16-bit
HYM5V64414ANG/ATNG/ASLNG/ASLTNG
18-OmW
A0-A10
DQ0-DQ63)
HYUNDAI i10
ha1930
HYM5V64414
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HY5118164
Abstract: No abstract text available
Text: "HYUNDAI HYM564124A R-Series Unbuffered 1M x 64-bit CMOS ORAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of tour HY5118164B in 42'42 pm SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O.inF and
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HYM564124A
64-bit
HY5118164B
HYM564124ARGATRGASLRGASLTRG
DQ0-DQ63)
1CE16-10-APR95
1CE16-10-APR96
HY5118164
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HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
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Untitled
Abstract: No abstract text available
Text: » H Y U N D A I H Y M 5 6 4 2 1 4 A F - S e r ie s Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5117804B in 28/28 SOJ
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64-bit
HYM564214A
HY5117804B
HYM564214AFG/ATFG/ASLFG/ASLTFG
of16M
/-0004f2
S41MIN.
-004M
4b750flfl
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HYUNDAI i10
Abstract: No abstract text available
Text: “H Y U N D A I HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Page m ode CMOS DRAM m odule consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for
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HYM532210A
32-bit
HYM53221OA
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
HYM53221OAEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
1CE13-10-DEC94
HYUNDAI i10
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM5V64214A F-Series 2M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64214A is a 2M x 64-bit EDO m ode CMOS DRAM m odule consisting of eight HY51V17804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .I^F and 0.01 nF
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HYM5V64214A
64-bit
HY51V17804B
HYM5V64214AFG/ATFG/ASLFG/ASLTFG
DQ0-DQ63)
1EC07-10-J
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HYM536410AMG
Abstract: No abstract text available
Text: “H Y U N D A I H Y M 5 3 6 4 1 0 A M - S e r ie s 4Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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4Mx36-blt
HYM536410A
36-bit
HY5117400A
HY514100A
HYM536410AM
HYM536410AMG
70WIJJ-í
p3G10
Pi/I53641
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HYUNDAI i10
Abstract: No abstract text available
Text: CYPRESS CY62256V25 PRELIMINARY 32K x 8 2.5V Static RAM active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. Features Single 2.5V power supply
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CY62256V25
HYUNDAI i10
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HYUNDAI i10
Abstract: No abstract text available
Text: CY62256V25 PRELIMINARY 32K X 8 2.5V Static RAM Features active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. • Single 2.5V power supply • Ideal for low-voltage and low-power cache memory
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CY62256V25
HYUNDAI i10
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STR W 5453 A
Abstract: HYUNDAI i10 STR 5453 LT 5251 STR W 5453 C STR W 5453 STR W 5453 A regulator preprogram bl p76 MCU FLASH
Text: HMS39C7092 Embedded Flash MCU Preliminary Specification Ver 0.9c System IC SBU, SP BU MCU Business Division, Flash Team Flash MCU HMS39C7092 Released : February. 2001 Update Note ARM is trademark of Advanced RISC Machine Ltd. ARM7TDMI is designed by ARM Ltd.
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HMS39C7092
HMS39C7092)
STR W 5453 A
HYUNDAI i10
STR 5453
LT 5251
STR W 5453 C
STR W 5453
STR W 5453 A regulator
preprogram
bl p76
MCU FLASH
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HYUNDAI i10
Abstract: QAA100 CY62256V25-70SNC CY62256V25-70ZC CY62256V25L-70SNC CY62256V25L-70ZC CY62256V25LL-70SNC " i10" hyundai
Text: • rn n rn n *= # r C i l h h o o CY62256V25 PRBUMINIÀRY 32K x 8 2.5V Static RAM Features active LO W ou tput enable OE and three -state drivers. The device has an au tom atic pow e r-d ow n feature, reducing the po w e r con sum p tion by m ore tha n 98% w hen deselected.
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CY62256V25
CY62256V25
HYUNDAI i10
QAA100
CY62256V25-70SNC
CY62256V25-70ZC
CY62256V25L-70SNC
CY62256V25L-70ZC
CY62256V25LL-70SNC
" i10" hyundai
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Hyundai I30
Abstract: D4JG C014H HYUNDAI i10 73E28 C03AH SE401 C086H C03EH C034H
Text: Aox Incorporated - Proprietary and Confidential 99-1-22 7:28 AM SE401 ASIC Specification Aox Incorporated Se401.doc 1 Aox Incorporated - Proprietary and Confidential 1 AOX - SE401 ASIC CONTROLLER. 4
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SE401
ARAM1024X8C16
ARAM1536X8C16
Hyundai I30
D4JG
C014H
HYUNDAI i10
73E28
C03AH
C086H
C03EH
C034H
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ic 74ls245 pdf datasheet
Abstract: 4816p-002-103 W17 SMD transistor 4816P-001 transistor c124 HYUNDAI i10 SMD LD3 smd transistor w16 transistor c114 ZP2 smd
Text: CNTRL.1 LED_BLK.1 BSEL_A BSEL_A CRS_A COLX_A SRCI+ SRCI- SRCI- SRCI- SRDO+ SRDO+ LDA[0:7] SRDO- SRDO- SRDO- BSEL_A SRDI+ SRDI+ SRDI+ SRDI- SRDI- COLX_A SRDI- AUI_BLK.1 SDO+ SDO+ PART_A PART_A PART_A LINK_A LINK_A LINK_A SDO- SCI+ SCI+ POL_A SDO+ SDO- SDO-
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Untitled
Abstract: No abstract text available
Text: User’s M anual, V1.0, Mar. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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TC11IB
D-81541
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Untitled
Abstract: No abstract text available
Text: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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TC11IB
D-81541
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SAF-TC11IB-64D96E
Abstract: p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746
Text: User’s Manual, V2.0, Sep. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.
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TC11IB
32-Bit
D-81541
v135b
AP326111
TC11IB
AP3203011_
2002-07/V1
TC11IBErrataSheetBBV17
SAF-TC11IB-64D96E
p3x btr
diagrams hitachi ecu
Hitachi DSA00319
B.A. private examination 2011
manual 1746
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tag 8948
Abstract: lmb 1021 hyundai ECU IC MT48LC2M32 ibm edram Hitachi DSA00318 B.A. private examination 2011 32F200 A04813
Text: User’s Manual, V1.2, Feb. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.
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TC11IB
32-Bit
D-81541
tag 8948
lmb 1021
hyundai ECU IC
MT48LC2M32
ibm edram
Hitachi DSA00318
B.A. private examination 2011
32F200
A04813
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sr0n
Abstract: 1154 se lxo cd 3313 eo BsBM2 "FUSE BOX"
Text: User’s Manual, V1.0, July 2004 TC1100 System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2004.
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TC1100
32-Bit
D-81541
sr0n
1154 se lxo
cd 3313 eo
BsBM2
"FUSE BOX"
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