Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HYNIX SEMICONDUCTOR AMERICA Search Results

    HYNIX SEMICONDUCTOR AMERICA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HYNIX SEMICONDUCTOR AMERICA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7MC-8128Z

    Abstract: CFU455D2 audio squelch circuit toko 10k coil TOKO 7MC-8128Z TOKO quad coil 7MC8128Z 10.245MHz crystal TOKO 10.7MHz quadrature coil audio squelch can
    Text: V 1.01 GL3361 Hynix Semiconductor Low Power Narrow Band FM IF Pin Configurations Description The GL3361 is designed for use in FM dual conversion communications equipment. This device contains an Oscillator, Mixer, Limiting Amplifier, Filter Amplifier and


    Original     		PDF GL3361 GL3361 7MC-8128Z 220pF 245MHz CFU455D2 audio squelch circuit toko 10k coil TOKO 7MC-8128Z TOKO quad coil 7MC8128Z 10.245MHz crystal TOKO 10.7MHz quadrature coil audio squelch can

    4 MBIT SERIAL FLASH MEMORY HYNIX

    Abstract: Hynix Semiconductor America
    Text: HY29DS322/HY29DS323 32 Megabit 4M x 8/2M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications


    Original     		PDF HY29DS322/HY29DS323 4 MBIT SERIAL FLASH MEMORY HYNIX Hynix Semiconductor America

    HY29LV400

    Abstract: Hynix Semiconductor America
    Text: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 55, 70 and 90 ns access time versions for


    Original     		PDF HY29LV400 8/256K HY29LV400 Hynix Semiconductor America

    Hynix Semiconductor America

    Abstract: No abstract text available
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		PDF HY29F040A Hynix Semiconductor America

    29F080

    Abstract: No abstract text available
    Text: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current


    Original     		PDF HY29F080 29F080

    HY29F002T

    Abstract: HY29F002
    Text: HY29F002T 2 Megabit 256K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current


    Original     		PDF HY29F002T HY29F002T HY29F002

    29f400 psop

    Abstract: programming 29F400 0x7C00
    Text: HY29F400 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte


    Original     		PDF HY29F400 512Kx8/256Kx16) 29f400 psop programming 29F400 0x7C00

    HY29F800T

    Abstract: PSOP 44 Pattern HY29F800B
    Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte


    Original     		PDF HY29F800 1Mx8/512Kx16) HY29F800T PSOP 44 Pattern HY29F800B

    HY29F800ATT

    Abstract: hynix 1.8 memory flash 0x78000
    Text: HY29F800A 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 50 ns n Low Power Consumption – 20 mA typical active read current in byte


    Original     		PDF HY29F800A 1Mx8/512Kx16) from55ns, 120ns HY29F800ATT hynix 1.8 memory flash 0x78000

    Untitled

    Abstract: No abstract text available
    Text: HY29F400A 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES 5 Volt Read, Program, and Erase – Minimizes system-level power requirements High Performance – Access times as fast as 50 ns Low Power Consumption – 20 mA typical active read current in byte


    Original     		PDF HY29F400A 512Kx8/256Kx16)

    0x7E000

    Abstract: HYNIX 512 Mbit HY29LV800 0X7D000
    Text: HY29LV800 8 Mbit 1M x 8/512K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full


    Original     		PDF HY29LV800 8/512K 0x7E000 HYNIX 512 Mbit HY29LV800 0X7D000

    2746h

    Abstract: k 6257 k 150MIL 300MIL HMS77C2000 HMS77C2001
    Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS77C2000 HMS77C2001 User’s Manual Ver. 1.1 HMS77C2000/2001 Revision History Ver 1.1 (this manual, NOV. 2002) Add IOL-VOL, IOH-VOH and VPP rising & falling time graphs in the electrical characteristics. Correct mistakes in the paragraph.


    Original     		PDF HMS77C2000 HMS77C2001 HMS77C2000/2001 howev-921-214 2746h k 6257 k 150MIL 300MIL HMS77C2000 HMS77C2001

    Untitled

    Abstract: No abstract text available
    Text: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full


    Original     		PDF HY29LV400 8/256K

    0x1FA000

    Abstract: 0x60000 00002A2C
    Text: HY29LV160 16 Mbit 2M x 8/1M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time


    Original     		PDF HY29LV160 0x1FA000 0x60000 00002A2C

    4 MBIT SERIAL FLASH MEMORY HYNIX

    Abstract: No abstract text available
    Text: HY29DS162/HY29DS163 16 Megabit 2M x 8/1M x 16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications


    Original     		PDF HY29DS162/HY29DS163 4 MBIT SERIAL FLASH MEMORY HYNIX

    hynix 227e

    Abstract: No abstract text available
    Text: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time


    Original     		PDF HY29LV320 128-word, 48ball 63ball 11x7mm2) hynix 227e

    29DL162T

    Abstract: 4 MBIT SERIAL FLASH MEMORY HYNIX HY29DL162 HY29DL163 HY29DL162TT HY29DL163B 0xE8000 29dl163 0x98000 0xa8000
    Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications


    Original     		PDF HY29DL162/HY29DL163 100pF 29DL162T 4 MBIT SERIAL FLASH MEMORY HYNIX HY29DL162 HY29DL163 HY29DL162TT HY29DL163B 0xE8000 29dl163 0x98000 0xa8000

    32 Megabit 3.0-Volt only Page Mode Flash Memory

    Abstract: No abstract text available
    Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications


    Original     		PDF HY29DL162/HY29DL163 100pF 32 Megabit 3.0-Volt only Page Mode Flash Memory

    Untitled

    Abstract: No abstract text available
    Text: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 80, 90 and 120 ns access time versions


    Original     		PDF HY29LV320

    voice record to SD card

    Abstract: usb ccd controller ic Epson matrix ccd MX8861 specifications tv pattern generator panasonic cmos image sensor matrix CCD epson diagram sony lcd tv tv pattern generator ic schematic diagram tv sharp
    Text: BRIEF MX8861 4M PIXEL MULTIMEDIA CAMERA CONTROLLER General Description The MX8861 is a highly integrated system LSI designed for a digital still camera from CIF up to 4 mega-pixels resolution. Based on a built-in powerful 32-bit RISC processor and many flexible and programmable functional


    Original     		PDF MX8861 MX8861 32-bit voice record to SD card usb ccd controller ic Epson matrix ccd specifications tv pattern generator panasonic cmos image sensor matrix CCD epson diagram sony lcd tv tv pattern generator ic schematic diagram tv sharp

    LCD Iphone 3G

    Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
    Text: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355


    Original     		PDF TMS320DM355 LLP-16 LP5551 LLP-36 LP5552 SMD-36 LCD Iphone 3G cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g

    Trends And Opportunities In Semiconductor Licensing

    Abstract: FinFET
    Text: Semiconductor Licensing Trends Trends And Opportunities In Semiconductor Licensing By Stefan Tamme, Stephen Schott, Dogan Gunes, Jeffrey Wallace, Richard Boadway, Frank Razavi, and Marc Pépin Summary The following article examines the impact of current business, technology, and international trends


    Original     		PDF

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash
    Text: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas


    Original     		PDF CH-9552 D-12681 SAMSUNG 4gb NAND Flash Qualification Report ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash

    88E8001

    Abstract: Motherboard dell optiplex gx280 88E8055 Marvell 88E8055 M5229 WD1600JS-00NCB1 marvell 88e8001 nc6000 Motherboard dell optiplex gx620 ibm thinkpad t42
    Text: Intel Entry Storage System SS4000-E Tested Hardware and Operating System List Revision 1.5 October, 2006 Storage Server Group Marketing Revision History Intel® Entry Storage System SS4000-E Revision History Date Revision Number 21 Feb 2006 0.5 Modifications


    Original     		PDF SS4000-E BCFv11b214 toDFE-530TX DFE-530TX GA-7VM400AM KT400-8235) ALC655 VT6420 VT6102 88E8001 Motherboard dell optiplex gx280 88E8055 Marvell 88E8055 M5229 WD1600JS-00NCB1 marvell 88e8001 nc6000 Motherboard dell optiplex gx620 ibm thinkpad t42