Untitled
Abstract: No abstract text available
Text: •HYUNDAI 128K X H Y 6 3 8 1 0 0 FAST SRAM 8 -b it PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai’s high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,
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OCR Scan
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HY638100
15/17/20/25ns
1DG01-11-MAY95
400mil
HY638100J
HY638100U
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PDF
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Untitled
Abstract: No abstract text available
Text: HY638100 •HYUNDAI 128K X 8 -b it FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai's high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,
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OCR Scan
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HY638100
HY638100
15/17/20/25ns
00Dbl
1DG01
-11-MAY95
400mil
1DG01-11-MAY95
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY638100 Series 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process. This high reliability process coupled with innovative circuit design techni
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OCR Scan
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HY638100
128KX
1DD02-00-MAY93
1DD02-00-M
HY638100PC
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PDF
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