HY57V654020ATC-10S
Abstract: HY57V654020ATC HY57V654020A
Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of
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HY57V654020A
HY57V654020A
864-bit
304x4.
400mil
54pin
HY57V654020ATC-10S
HY57V654020ATC
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dram 4mx4
Abstract: HY57V654020A Hyundai Semiconductor dram HY57V654020ATC-10S
Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of
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HY57V654020A
HY57V654020A
864-bit
304x8.
1SE31-11-MAR98.
400mil
54pin
dram 4mx4
Hyundai Semiconductor dram
HY57V654020ATC-10S
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BYTE18
Abstract: BYTE65 HYM7V75AS1601ATNG
Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt
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16Mx72
PC/100
16Mx4
HYM7V75AS1600A/
HYM7V75AS1601A/
HYM7V75AS1630A/
HYM7V75AS1631A
75AS1601A/
75AS1630A/
BYTE18
BYTE65
HYM7V75AS1601ATNG
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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Untitled
Abstract: No abstract text available
Text: - H Y U N D ft l - • HY57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of
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HY57V654020A
HY57V654020A
864-bit
304x8.
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HY57V16161
Abstract: hy57v168010b 1MX16BIT 4MX16
Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram
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HY57V41610TC---------------------
256Kx16-bit,
16M-bit
HY57V16401O
--------HY57V168010BTC-------------------
-------------------------------HY57V16161
-------------------1Mx16-bit,
64M-bit
HY5DV654023TC--------------------
HY57V16161
hy57v168010b
1MX16BIT
4MX16
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