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HY57V654020ATC-10S Abstract: HY57V654020ATC HY57V654020A Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of	Original	HY57V654020A HY57V654020A 864-bit 304x4. 400mil 54pin HY57V654020ATC-10S HY57V654020ATC	PDF
dram 4mx4 Abstract: HY57V654020A Hyundai Semiconductor dram HY57V654020ATC-10S Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of	Original	HY57V654020A HY57V654020A 864-bit 304x8. 1SE31-11-MAR98. 400mil 54pin dram 4mx4 Hyundai Semiconductor dram HY57V654020ATC-10S	PDF
BYTE18 Abstract: BYTE65 HYM7V75AS1601ATNG Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt	Original	16Mx72 PC/100 16Mx4 HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A 75AS1601A/ 75AS1630A/ BYTE18 BYTE65 HYM7V75AS1601ATNG	PDF
Untitled Abstract: No abstract text available Text: - H Y U N D ft l - • HY57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of	OCR Scan	HY57V654020A HY57V654020A 864-bit 304x8.	PDF
hy57v168010b Abstract: ddr sdram 128Mbit 8Mx16 54-PIN Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x	OCR Scan	256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN	PDF
HY57V16161 Abstract: hy57v168010b 1MX16BIT 4MX16 Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram	OCR Scan	HY57V41610TC--------------------- 256Kx16-bit, 16M-bit HY57V16401O --------HY57V168010BTC------------------- -------------------------------HY57V16161 -------------------1Mx16-bit, 64M-bit HY5DV654023TC-------------------- HY57V16161 hy57v168010b 1MX16BIT 4MX16	PDF