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    HY57V561620A

    Abstract: HY57V561620AT-H HY57V561620AT
    Text: HY57V561620AT 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.


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    PDF HY57V561620AT 16Bit HY57V561620A 456bit 304x16. 400mil 54pin HY57V561620AT-H HY57V561620AT

    HY57V561620AT-H

    Abstract: No abstract text available
    Text: HY57V561620A 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.


    Original
    PDF HY57V561620A 16Bit HY57V561620A 456bit 304x16. 400mil 54pin HY57V561620AT-H

    HY57V561620A

    Abstract: No abstract text available
    Text: HY57V561620A L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.


    Original
    PDF HY57V561620A 16Bit 456bit 304x16. 400mil 54pin

    57v561620

    Abstract: No abstract text available
    Text: HY57V561620A L T 16Mx16-bit, 8K Ref., 4Banks, 3.3V DESCRIPTION The HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.


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    PDF HY57V561620A 16Mx16-bit, 456bit 304x16. 256M-bit 54pin 57v561620

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


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    PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201

    PC100

    Abstract: 54-PIN
    Text: 2 . PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X XX X X PRO DUCT Q UICK REFERENCE New SDRAM PART NUMBERING XX I : Industrial Tem perature E: Extended Tem perature HY NIX M EM OR Y SPEED PRODUCT G ROUP 57 : SDRAM s PROCESS & PO W ER SUPPLY


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    PDF 183MHz PC133 125MHz PC100, 100MHz M72V32656T8 HYM72V32636T8 HYM72V32756T8 PC100 54-PIN