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    HY531000A Price and Stock

    SK Hynix Inc HY531000AJ-70

    Dynamic RAM, Fast Page, 1M x 1, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY531000AJ-70 10
    • 1 $2.5
    • 10 $2.3
    • 100 $2.3
    • 1000 $2.3
    • 10000 $2.3
    		Buy Now

    SK Hynix Inc HY531000ALJ-60

    Dynamic RAM, Fast Page, 1M x 1, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY531000ALJ-60 1,532
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.7875
    		Buy Now
    HY531000ALJ-60 239
    • 1 $3.45
    • 10 $3.45
    • 100 $1.725
    • 1000 $1.5956
    • 10000 $1.5956
    		Buy Now

    hyn HY531000ALJ60

    1M X 1, FAST PAGE MODE Fast Page DRAM, 1MX1, 60ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY531000ALJ60 75
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    HY531000A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY531000AJ Hynix Semiconductor 1Mx1, Fast Page mode Original PDF

    HY531000A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000C HY531000A HYM591000CM/CLM 1BB08-10-MAY93 1BB08-10-MAYM 1BB08-10-MAVM

    HYM5361

    Abstract: HYM536100AMG hym536100
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


    OCR Scan     		PDF 36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100

    Untitled

    Abstract: No abstract text available
    Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536120A 36-bit HY5118160B HY531000A 22nFdecoupling HYM536120AW/ALW HYM536120AWG/ALWG DQ0-DQ35)

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 3 1 A S e r i e s 1M X 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A HY531000Ato 300mil 1AB05-10-APR94 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22/iF HYM581000CM/CLM 1BB07-10-M G0Q174S DDQ17M3

    HYM536100A

    Abstract: No abstract text available
    Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 132-OmW DGG20b4

    Untitled

    Abstract: No abstract text available
    Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)

    HYM536200AM

    Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
    Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling


    OCR Scan     		PDF HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM

    hy5118160b

    Abstract: No abstract text available
    Text: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536220A 36-bit HY5118160B HY531000Ain 20/26pin 22nFdecoupling HYM536220AW/LW HYM536220AWG/LWG

    Yundai

    Abstract: No abstract text available
    Text: • HY531000A 1Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1-bit c o n fig u ra tio n w ith F a st P age m ode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan     		PDF HY531000A HY531000ALS HY531000ALJ) Yundai

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22fiF HYM581000CM/CLM 1BB07-10-M 1BB07-10-MAY93 1BB07-1

    HYM536200AM60

    Abstract: 00S11
    Text: • H Y U N D A I H Y M 5 3 6 2 A M - S e r î e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536200A 36-bit HY514400A HY531000A 22nFdecoupling HYM536200AM/ALM HYM536200AMG/ALMG 06QI127 HYM536200AM60 00S11

    HYM536100AM

    Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
    Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A 22uFdecouDlina HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-01-FEB94 HYM536100AM HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000C HY531000A 22/iF HYM591OOOCM/CLM 1BB08-10-MAYW 4b750Ã 07IV7B1

    HYM591000B

    Abstract: No abstract text available
    Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is


    OCR Scan     		PDF HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1BB06-00-M 1BB06-00-MAY93

    HY5118160

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 1C006-01-SEP94

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		PDF HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    Untitled

    Abstract: No abstract text available
    Text: H Y531000A H Y U N D A I SEMICONDUCTOR S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF Y531000A HY531000A 300mil Schottk31000A 300BSC 100BSC 1AB05-10-APR93

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY531000ALJ60

    Abstract: HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc
    Text: H Y 5 3 1 0 0 0 A ‘ • H Y U N D A I S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A HY531000A TheHY531000Autilizes HY531000Ato 300mil 300BSC 3-11deg 1AB01-20-MAY95 HY531000AS HY531000ALJ60 HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc