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    HY51V65403

    Abstract: HY51V65403HG Hyundai Semiconductor dram HY51V 65403HG
    Text: HY51V S 65403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal


    Original     		PDF HY51V 65403HG/HGL 64Mbit 400mil 32pin HY51V65403 HY51V65403HG Hyundai Semiconductor dram HY51V 65403HG

    k2835

    Abstract: HY51VS
    Text: HY51V S 65403HG(HGL) 16Mx4, 3.3V, 4K Ref, EDO DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera­


    OCR Scan     		PDF HY51V 65403HG 16Mx4, 64Mbit 100us. 65403H 400mil 32pin I400mii k2835 HY51VS

    Untitled

    Abstract: No abstract text available
    Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns


    OCR Scan     		PDF 8Mx72 7738280CTG A6V8730E18H 71V65800Cx9 HY51V 65803HG 71V64403C 71V65403C 65403HG