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    HY514400 Price and Stock

    SK Hynix Inc HY514400AJ-70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY514400AJ-70 82
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    Quest Components HY514400AJ-70 235
    • 1 $4.23
    • 10 $2.115
    • 100 $1.833
    • 1000 $1.833
    • 10000 $1.833
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    HY514400AJ-70 167
    • 1 $4.23
    • 10 $4.23
    • 100 $2.6085
    • 1000 $2.6085
    • 10000 $2.6085
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    HY514400AJ-70 115
    • 1 $4.23
    • 10 $4.23
    • 100 $2.6085
    • 1000 $2.6085
    • 10000 $2.6085
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    HY514400AJ-70 26
    • 1 $4.23
    • 10 $2.115
    • 100 $2.115
    • 1000 $2.115
    • 10000 $2.115
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    SK Hynix Inc HY514400ALJ-60

    Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY514400ALJ-60 330
    • 1 $8.82
    • 10 $8.82
    • 100 $3.822
    • 1000 $3.528
    • 10000 $3.528
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    HY514400ALJ-60 30
    • 1 $8.82
    • 10 $4.41
    • 100 $4.41
    • 1000 $4.41
    • 10000 $4.41
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    Component Electronics, Inc HY514400ALJ-60 15
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    hyn HY514400AJ70

    1M X 4, FAST PAGE MODE Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY514400AJ70 120
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    HY514400 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY514400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY514400 Unknown 1M x 4-bit CMOS DRAM Scan PDF
    HY514400-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY514400-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY514400A Hyundai 1m x 4-bit Cmos DRAM Scan PDF
    HY514400AJ Hynix Semiconductor 1Mx4, Fast Page mode Original PDF
    HY514400AJ Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400AJ50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400AJ60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400AJ70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALJ50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALR Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALR50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALR60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALR70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALT Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALT50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF

    HY514400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY514400A

    Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
    Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    Original     		PDF HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT

    HY514400B

    Abstract: No abstract text available
    Text: HY514400B FUNCTIONAL BLOCK DIAGRAM DQ0 ~ DQ3 4 8 Data Input Buffer WE CAS OE Data Output Buffer 4 4 CAS Clock Generator 4 A0 Cloumn Predecoder 10 A1 10 Column Decoder A3 A4 A5 A6 Address Buffer A2 Sense Amp I/O Gate Refresh Controller Refresh Counter (10)


    Original     		PDF HY514400B HY514400B

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.

    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl

    HYM536100M

    Abstract: No abstract text available
    Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted


    OCR Scan     		PDF HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-bit HY514400A 22/iF HYM5321OOAM/ALM HYM532100AMG/ALMG 1CC03-00-M

    Untitled

    Abstract: No abstract text available
    Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.


    OCR Scan     		PDF 32100A 32-blt HYM532100A 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG compatible004M 750M6 004t1

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 4 4 0 0 S e r ie s 1 M x 4-bit C M O S D R A M • • H Y U N D A I DESCRIPTION Hie HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400 1AC02-30-MAY94 4b750flfl DG0244T 8700M 9060f7 1AC02-30-M

    mr 6710

    Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
    Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HY514400B Series 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400B FEATURE00 1AC11-10-MAY95 HY514400BJ HY514400BLJ HY514400BSU

    HYM532200

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532200A M-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200Ais a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting o f sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iFdecoupling capacitor is mounted for each ORAM.


    OCR Scan     		PDF HYM532200A 32-bit HYM532200Ais HY514400A HYM532200AM/ALM HYM532200AMG/ALMG DQ0-DQ31) 1C003-01-FEB94 HYM532200

    57210

    Abstract: No abstract text available
    Text: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on


    OCR Scan     		PDF HYM572103 72-blt 72-bit HY514400A HY514403B 16-bit HYM572103NG/TNG/LMG/LTMG 121mW 209mW 57210

    HYM5361

    Abstract: HYM536100AMG hym536100
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


    OCR Scan     		PDF 36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 1BB0fr40-M 1BB05-00-M 1BB05-00-MAY93

    HYM532100

    Abstract: hym532100m
    Text: HYUNDAI SEMICONDUCTOR HYM532100 Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100 Is a 1M x 32-blt Fast page mode CMOS DRAM module consisting of eight HY514400 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2i>uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF 32-bit HYM532100 32-blt HY514400 HYM532100M HYM532100MG CX5-BEFORE-K55 1CC01-10-MAY93

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT

    HYM536100A

    Abstract: No abstract text available
    Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 132-OmW DGG20b4

    Untitled

    Abstract: No abstract text available
    Text: HYM532200A M-Series •HYUNDAI 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A Is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22fi? decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532200A 32-bit HY514400A HYM532200AM/ALM HYM532200AMG/ALMG 1CD03-01-FEBM DGD34SD

    Untitled

    Abstract: No abstract text available
    Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)

    Untitled

    Abstract: No abstract text available
    Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400B HY514400B 4b750flfl 1AC11-10-MAY95 HY514400BJ HY514400BLJ HV514400BSLJ

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514400 Series SEMICONDUCTOR 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology a s well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400 ai050 1AC02-30-APR93 HY514400J 00014M0

    HYM540A200MG

    Abstract: No abstract text available
    Text: HYM540A200 M-Series HYUNDAI 2M X 40-bit CMOS DRAM MODULE DESCRIPTION The HYM540A200 is a 2M x 40-bit Fast page mode CMOS DRAM module consisting of twenty HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM540A200 40-bit HY514400A HYM540A200M/LM HYM540A200MG/LMG GG03477 0D0347A HYM540A200MG

    HYM536200AM

    Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
    Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling


    OCR Scan     		PDF HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM