Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.
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HYM532100A
32-bit
HY514400A
22/iF
HYM5321OOAM/ALM
HYM532100AMG/ALMG
1CC03-00-M
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Untitled
Abstract: No abstract text available
Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.
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32100A
32-blt
HYM532100A
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
compatible004M
750M6
004t1
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
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HYM532100
Abstract: hym532100m
Text: HYUNDAI SEMICONDUCTOR HYM532100 Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100 Is a 1M x 32-blt Fast page mode CMOS DRAM module consisting of eight HY514400 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2i>uF decoupling capacitor is mounted for each DRAM.
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32-bit
HYM532100
32-blt
HY514400
HYM532100M
HYM532100MG
CX5-BEFORE-K55
1CC01-10-MAY93
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HYM532100
Abstract: No abstract text available
Text: HYM532100 N-Series ‘ H YU N D A I 1M X 32-bit CMOS ORAM MODULE DESCRIPTION The HYM532100 is a 1M x 32-bit Fast page m ode CMOS DRAM m odule consisting of eight HY514400A in 20/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22nF decoupling ca p a citor is
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HYM532100
32-bit
HY514400A
HYM532100TNG/LTNG
DQ0-DQ31)
1DC01-10-JAN95
1DC01
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100 Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400 in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2 2pF decoupling capacitor Is mounted for each DRAM.
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HYM532100
32-bit
HY514400
HYM532100M
HYM532100MG
1CC01
-10-MAY93
4b7506B
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G1994
Abstract: HYM532100AM rx-5ca
Text: • HYUNDAI HYM532100A M-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for each DRAM.
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HYM532100A
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
DQ0-DQ31)
1CC03-01-FEB94
HYM5321OOA
G1994
HYM532100AM
rx-5ca
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HYM532100AMG
Abstract: MCS28 HYM532100A hym532100AM
Text: • HSEMICONDUCTOR YUNDAI H Y M 5 3 2 1 0 0 A S e r ie s 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.
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32-bit
HYM532100A
HY514400A
HYM5321OOAM/ALM
HYM53210OAMG/ALMG
1CC03-00-MAY83
1CC03-00-MAY93
HYM532100AMG
MCS28
hym532100AM
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HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
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HYM536100AM
Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
HYM536A414AM
HYM536A414BM
HYM532814AM
HYM532814BM
HYM536100AM
HYM532814
4Mx4 dram simm
HYM532100AM
1MX32
HYM532120W
HYM532224
HYM536410
HYM536410AM
HYM532200AM
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st z7m
Abstract: SO DIMM 72-pin C5401 PI-33
Text: TIMING DIAGRAM INDEX DRAM MODULE 3.3V DIMM TYPE SIZE 8-Byta 8MB DESCRIPTION 1M X 64 EDO, SL DIMM 168 Pin FPM, SL 1M X 72 FPM, SL FPM, SL, ECC 16MB 2M X 64 EDO, SL FPM, SL 2M 32MB X 72 FPM, SL, ECC 4M X 64 EDO, SL FPM, SL 4M X 72 EDO, SL, ECC FPM, SL, ECC
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYMSV64100AN/ATN
HYMSV641OOAX/ATX
1WCHQ11
1CWU351,
st z7m
SO DIMM 72-pin
C5401
PI-33
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling
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36-blt
HYM536100A
36-bit
HY514400A
HY531000A
22fiF
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-01-FEB94
4b75DÃ
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d 100 d
Abstract: Y514100A HYM532220
Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYM5V64100AN/ATN
HYM5V64100AX/ATX
HYM5V64120AX/ATX
HYMSV72103AN/ATN
HYM5V72A100ATN
HYM5V72A120ATX
HY51V16164B
HY51V18164BJ/BT
d 100 d
Y514100A
HYM532220
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