HY514100A
Abstract: HY514100ALT HY514100AJ 4Mx1
Text: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY514100A
128ms
HY514100A
HY514100ALT
HY514100AJ
4Mx1
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HY5117400B
Abstract: HY514100A
Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536410B
4Mx36
4Mx36-bit
HY5117400B
HY514100A
HYM536410BM
HYM536410BMG
72-Pin
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PDF
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HY5117400B
Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536810D
8Mx36
8Mx36-bit
HY5117400B
HY514100A
HYM536810DM
HYM536810DMG
72-Pin
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PDF
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HY5117400C
Abstract: HY514100A HYM536810E HYM536810EM1 HYM536810EMG1
Text: HYM536810E M1-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810E M1-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536810E
8Mx36
8Mx36-bit
HY5117400C
HY514100A
HYM536810EM1
HYM536810EMG1
72-Pin
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PDF
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HYM536410AMG
Abstract: hym536410am HY5117400A HY514100A
Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /
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HYM536410A
4Mx36-bit
36-bit
HY5117400A
HY514100A
HYM536410AM
HYM536410AMG
1CE11-10-DEC94
HY5117400A
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HY5117400C
Abstract: HY514100A HYM536810E HYM536810EM HYM536810EMG
Text: HYM536810E M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810E M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536810E
8Mx36
8Mx36-bit
HY5117400C
HY514100A
HYM536810EM
HYM536810EMG
72-Pin
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PDF
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HY5117400A
Abstract: HY514100A HYM536810AM HYM536810AMG
Text: HYM536810A M-Series 8Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The
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HYM536810A
8Mx36-bit
36-bit
HY5117400A
HY514100A
HYM536810AM/ASLM/ATM/ASLTM
HYM536810AMG/ALMG/ATMG/ALTMG
1CE13-10-DEC94
HYM536810AM
HYM536810AMG
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HYM536410MG
Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling
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OCR Scan
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HYM536410
36-blt
36-bit
HY5117400
HY514100A
HYM53641OM/LM
HYM536410MG/LMG
1CE06-20-MAV94
HYM536410MG
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Untitled
Abstract: No abstract text available
Text: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM584000A
HY514100A
22fiF
HYM584000AM/ALM
acce4000A
1BC03-11-FEB94
0-05M
031MIN.
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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14100A
HY514100A
HV514100A
1AC06-20-APR93
4b75DÃ
HY514100AJ
HY514100AU
HY514100AT
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hym536810
Abstract: HYM53
Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.
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OCR Scan
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HYM536810
36-blt
36-bit
HY5117400
HY514100A
22fiF
HYM53681OM/LM/TM/LTM
HYM53681OMG/LMG/TMG/LTMG
HYM53681OT/LT
HYM53
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Untitled
Abstract: No abstract text available
Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin
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OCR Scan
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8Mx36-blt
HYM536810A
36-bit
HY5117400A
HY514100A
HYM53681OAM/ASLM/ATM/ASLTM
HYM53681OAMG/ALMG/ATMG/ALTMG
1CE13-10-DEC94
HYM536810AM
HYM53681
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling
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OCR Scan
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HYM594000B
HY5117400
HY514100A
22jiF
HYM594000BM/BLM
1BC06-11-MAR94
50fifi
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PDF
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U5SB
Abstract: 1621-B AY83
Text: •HYUNDAI SEMICONDUCTOR HYM584000A Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of eight HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM584000A
HY514100A
HYM584000AM/ALM
1BC03-10-M
005f0
061MAX.
U5SB
1621-B
AY83
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY514100A 4M x1, F as t Page m ode DESCRIPTION T h is f a m ily is a 4M b it d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 x 1 -b it c o n f ig u r a t io n w ith F a s t P a g e m o d e C M O S D R A M s. E xte n d e d d a ta o u t m od e is a kind o f pa ge m ode w h ich is u se fu l fo r th e read o p e ra tio n . T h e c irc u it and p ro c e s s
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OCR Scan
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HY514100A
128ms
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PDF
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Untitled
Abstract: No abstract text available
Text: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY514100A
HY514100A
1AC06-30-MAY95
HY514100AJ
HY514100ALJ
HY514100AT
HY514100ALT
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PDF
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Untitled
Abstract: No abstract text available
Text: HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY514100A
Schot0300
1AC06-30-MAY94
D002U0Q
HY514100AJ
HY514100AU
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PDF
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HYM533400
Abstract: No abstract text available
Text: HYM533400 M-Series HYUNDAI 4M x 33-bit CMOS DRAM MODULE DESCRIPTION The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each
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OCR Scan
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HYM533400
33-bit
HY514100A
22juF
HYM533400M/LM
HYM533400MG/LMG
1CE11-11-FEB94
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53681OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOP1I and eight HY514100Ain 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit
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OCR Scan
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HYM536810A
36-bit
HYM53681OA
HY5117400A
HY514100Ain
HYM53681OAM/ALM/ATM/ALTM
HYM53681OAMG/ALMG/ATMG/ALTMG
HYM536810A/AL
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PI-38
Abstract: No abstract text available
Text: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling
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OCR Scan
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HYM594000B
HY5117400
HY514100A
HYM594000BM/BLM
1BC0e-00
MAY93
53-BEFORE-H
1BC06-00
PI-38
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PDF
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I SEMICONDUCTOR H Y M 536400A Series 4M x 36-blt CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each
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OCR Scan
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36400A
36-blt
HYM536400A
36-bit
HY514100A
HYM536400AM/ALM
HYM536400AMG/ALMG
1CE04-00-MATO
1CE04-00-MAY93
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PDF
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bt dof
Abstract: No abstract text available
Text: •HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling
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OCR Scan
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HYM536410
36-bit
HY5117400
HY514100A
HYM536410M/LM
HYM536410MG/LMG
4b750flÃ
1CE06-00-MAY93
bt dof
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PDF
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Untitled
Abstract: No abstract text available
Text: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit
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OCR Scan
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36-bit
HYM536810A
HY5117400A
HY514100A
HYM53681OAM/ALM/ATM/ALTM
HYM53681OAMG/ALMG/ATMG/ALTMG
HYM536810A/AL
HYM536810AT/ALT
4b75DflA
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PDF
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Untitled
Abstract: No abstract text available
Text: •H YU N D AI SEMICONDUCTOR HYM584000A Series 4M xS-blt CMOS DRAM MODULE DESCRIPTION The HYM584Q00A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM584000A
HYM584Q00A
HY514100A
22/xF
HYM584000AM/ALM
1BC03-10-MAY93
4b750flfl
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PDF
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