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    HY5118160 Price and Stock

    SK Hynix Inc HY5118160BTC-60

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    Bristol Electronics HY5118160BTC-60 124
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    Quest Components HY5118160BTC-60 99
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    HY5118160BTC-60 65
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    • 100 $80.6
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    HY5118160 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY5118160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY5118160C Hyundai 1Mx16, Fast Page mode Original PDF

    HY5118160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5118160

    Abstract: HY5118160BTC HY5118160B
    Text: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160B HY5116160B 1Mx16, 16-bit 1Mx16 HY5118160 HY5118160BTC

    HY5118160C

    Abstract: HY5116160C HY5118160CJC
    Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160C HY5116160C 1Mx16, 16-bit 1Mx16 HY5116160C HY5118160CJC

    HY5116160C

    Abstract: HY5118160C
    Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160C HY5116160C 1Mx16, 16-bit 1Mx16 10/Sep HY5116160C

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for


    OCR Scan     		PDF HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 70MIN.

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 4b750flfl

    HY5118160

    Abstract: HY5118160C
    Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5118160C HY5116160C 1Mx16, 16-bit A0-A11) DQ0-DQ15) HY5118160

    odq1

    Abstract: HYM532120
    Text: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM532120 32-bit HY5118160 HYM532120W/SLW/TW/SLTW HYM532120WG/SLWG HYM532120/SL HYM532120T/SLT odq1

    HY5118160BTC

    Abstract: hy5118160b
    Text: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


    OCR Scan     		PDF HY5118160B, HY5116160B 16bit HY5118160BJC HY5118160BSLJC HY5118160BTC HY5118160BSLTC HY5116160BJC HY5116160BSLJC HY5116160BTC hy5118160b

    Untitled

    Abstract: No abstract text available
    Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536120A 36-bit HY5118160B HY531000A 22nFdecoupling HYM536120AW/ALW HYM536120AWG/ALWG DQ0-DQ35)

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM532120A 32-bit HY5118160B HYM532120AW/ASLW/ATW/ASLTW HYM532120AWG/ASLWG 4b750flfl 1CC03-10-DEC94

    HY5118160

    Abstract: No abstract text available
    Text: HYUNDAI HYM536223 X-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536223 is a 2M x 36-bit Fast page m ode CMOS DRAM m odule consisting o f fo u r HY5118160 in 42/42 pin SOJ o r 42/50 pin TSOPII and tw o HY514403B in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM536223 36-bit HY5118160 HY514403B HYM536223X/TX/SLX/SLTX HYM536223XG/TXG/SLXG/SLTXG HYM5J62ZJ/SI. 1DD0210-FEB95

    hy5118160b

    Abstract: No abstract text available
    Text: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536220A 36-bit HY5118160B HY531000Ain 20/26pin 22nFdecoupling HYM536220AW/LW HYM536220AWG/LWG

    HYM532220WG

    Abstract: HYM532220 9 bit SIMM pins
    Text: -HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM532220 32-bit HY5118160 HYM532220W/SLW/TW/SLTW HYM532220WG/SLWG HYM532220/SL HYM532220T/SLT HYM532220WG 9 bit SIMM pins

    HY5118160

    Abstract: No abstract text available
    Text: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit


    OCR Scan     		PDF 36-bit HYM536123 HY5118160 HY514403B HYM536123X/TX/SLX HYM536123XG/TXG/SLXG/SLTXG DQ0-DQ35) 1DC03-10-FEB95

    HYM564220XG

    Abstract: No abstract text available
    Text: HYM564220 X-Series HYUNDAI 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564220 is a 2M x 64-bit Fast page mode CMOS DRAM module consisting ol eight HY5118160 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22|aF


    OCR Scan     		PDF HYM564220 64-bit HY5118160 16-bit HYM564220XG/SLXG DQ0-DQ63) 1ED01-10-APR95 HYM564220XG

    HY5118160JC70

    Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
    Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. 0-629CB1 10-2g2) 016B3 000M750 HY5118160JC70 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 1 8 1 6 0 S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118160 16-bit. HY5118160 75Dfl 1AD15-10-MAY95 HY5118160JC HY5118160SLJC

    hy5118160b

    Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
    Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H Y5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit Y5118160B 16-bit. HY5118160B ia069 1AD54-10-MAY95 HY5118160BJC HY5118160BSLJC WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC

    HY5118160

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 1C006-01-SEP94

    HY5118160B

    Abstract: No abstract text available
    Text: . « y u n p i n " * HY5118160B.HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1 ,0 4 8,57 6 x 16-bit configuration with Fast P age mode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5118160B HY5116160B 1Mx16, 16-bit

    TAA 981

    Abstract: HY5118160 HY5118160JC
    Text: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. 1AD15-10-MAY94 HY5118160JC TAA 981

    HY5118160

    Abstract: IPR12 hy5118160jc AAU27
    Text: HY5118160 Series •HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. Sc5060) 1AD15-10-MAY95 HY5118160JC IPR12 AAU27

    hy5118160b

    Abstract: HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160
    Text: HY5118160B Series •HYUNDAI 1 M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynam ic RAM organized 1,048.576 x 16-bit. The HY5118160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160B 16-bit 16-bit. 4b75GÃ 00047b5 1AD54-10-MAY95 HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160