Untitled
Abstract: No abstract text available
Text: HYM594000A M-Series •H Y U N D A I 4M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22«F decoupling capacitor is mounted for each DRAM.
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HYM594000A
HY5114100A
HYM594000AM/ALM
1BC04-1I-FEB94
4L75DÃ
00D3324
25IMAX.
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532214A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532214Ais a 2M x 32-bit EDO mode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jFand 0.01 nF decoupling capacitors are mounted
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HYM532214A
32-bit
532214Ais
HY5117804B
HYM532214AE/ASLE/ATE/ASLTE
HYM532214AEG/ASLEG/ATEG/ASLTEG
12S-/-0
OOS11DI*
25IMAX
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR H Y M 584000 Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 In 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22pF decoupling capacitor Is mounted for each DRAM.
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HYM584000
HY514100
HYM584000M
1BC01-20-M
1BC01-20-MAY93
25iMAX.
1BCOI-20-MAY93
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