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    HVL144A Price and Stock

    Rochester Electronics LLC HVL144A3KRF-E

    DIODE PIN SWITCH 30V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HVL144A3KRF-E Bulk 200,000 2,319
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    • 10000 $0.13
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    Rochester Electronics LLC HVL144AKRF-E

    DIODE PIN SWITCH 30V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HVL144AKRF-E Bulk 90,000 2,319
    • 1 -
    • 10 -
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    • 10000 $0.13
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    Renesas Electronics Corporation HVL144A3KRF-E

    HVL144A - Diode PIN Switch 30V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HVL144A3KRF-E 200,000 1
    • 1 $0.1307
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    Renesas Electronics Corporation HVL144AKRF-E

    HVL144A - Diode PIN Switch 30V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HVL144AKRF-E 90,000 1
    • 1 $0.1307
    • 10 $0.1307
    • 100 $0.1229
    • 1000 $0.1111
    • 10000 $0.1111
    Buy Now

    HVL144A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HVL144A Renesas Technology Silicon Epitaxial Planar Pin Diode Original PDF
    HVL144A Renesas Technology Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF
    HVL144A-E Renesas Technology DIODE PIN SWITCH 30V 2EFP Original PDF
    HVL144AKRF Renesas Technology Pin Diode, Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF
    HVL144AKRF-E Renesas Technology DIODE PIN SWITCH 30V 2EFP Original PDF
    HVL144AM Renesas Technology Silicon Epitaxial Planar Pin Diode Original PDF
    HVL144AM Renesas Technology Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF
    HVL144AM-E Renesas Technology Diode: Silicon Epitaxial Trench Pin Diode for Antenna Switching Original PDF

    HVL144A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0200 Rev.2.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144A REJ03G0433-0200 HVL144A PXSF002ZA-A

    Untitled

    Abstract: No abstract text available
    Text: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0300 Rev.3.00 Jul 14, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144A REJ03G0433-0300 HVL144A PXSF0002ZA-A

    HVL144A

    Abstract: No abstract text available
    Text: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0300 Rev.3.00 Jul 14, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144A REJ03G0433-0300 PXSF0002ZA-A HVL144A

    Untitled

    Abstract: No abstract text available
    Text: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0300 Rev.3.00 Jul 14, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144A REJ03G0433-0300 PXSF0002ZA-A

    Untitled

    Abstract: No abstract text available
    Text: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0100 Previous: ADE-208-1594 Rev.1.00 Nov 26, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) Low forward resistance. (rf = 1.8 Ω max)


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    PDF HVL144A REJ03G0433-0100 ADE-208-1594) HVL144A Unit2607

    HVL144AM

    Abstract: No abstract text available
    Text: HVL144AM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0199-0100Z Rev.1.00 Mar.25.2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144AM REJ03G0199-0100Z HVL144AM

    HVL144AM

    Abstract: PUSF0002ZA-A
    Text: HVL144AM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0199-0200 Rev.2.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144AM REJ03G0199-0200 PUSF0002ZA-A HVL144AM PUSF0002ZA-A

    HVL144AM

    Abstract: PUSF0002ZA-A
    Text: HVL144AM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0199-0200 Rev.2.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.


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    PDF HVL144AM REJ03G0199-0200 PUSF0002ZA-A HVL144AM PUSF0002ZA-A

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


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    PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    HVL144A

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    HVL144A

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF D-85622 D-85619 HVL144A

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    Ample Communications

    Abstract: HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF REJ27G0027-0100/Rev Ample Communications HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


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    PDF ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    HVL144AM

    Abstract: PUSF0002ZA-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
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