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    HSD88 Price and Stock

    Rochester Electronics LLC HSD88KRF-E

    DIODE SCHOTTKY BARRIER
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    DigiKey HSD88KRF-E Bulk 2,704
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    Renesas Electronics Corporation HSD88KRF-E

    - Bulk (Alt: HSD88KRF-E)
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    Avnet Americas HSD88KRF-E Bulk 4 Weeks 3,256
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    Verical HSD88KRF-E 4,215 491
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    Rochester Electronics HSD88KRF-E 6,015 1
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    Chip1Stop HSD88KRF-E Cut Tape 4,215
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    HSD88 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HSD88 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original PDF
    HSD88 Renesas Technology Silicon Schottky Barrier Diode for Various Detector, Mixer Original PDF
    HSD880 Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HSD882 Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    HSD882 Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HSD882S Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HSD882S Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    HSD88KRF Renesas Technology Diode, Silicon Schottky Barrier Diode for Various Detector, Mixer Original PDF
    HSD88KRF-E Renesas Technology Diode: Silicon Schottky Barrier Diode for Various Detector: Mixer Original PDF

    HSD88 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HSD882S

    Abstract: HSD882
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2002.01.25 Page No. : 1/4 HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.


    Original     		PDF HE6544 HSD882S HSD882S HSD882

    HSD88

    Abstract: PUSF0002ZB-A
    Text: HSD88 Silicon Schottky Barrier Diode for Detector, Mixer REJ03G0602-0100 Previous: ADE-208-1386 Rev.1.00 Apr 26, 2005 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Lead Package (SFP) is suitable for surface mount design.


    Original     		PDF HSD88 REJ03G0602-0100 ADE-208-1386) PUSF0002ZB-A Unit2607 HSD88 PUSF0002ZB-A

    HSD88

    Abstract: DSA003640
    Text: HSD88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-1386 Z Rev.0 Jun. 2001 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information


    Original     		PDF HSD88 ADE-208-1386 HSD88 DSA003640

    Untitled

    Abstract: No abstract text available
    Text: HSD88 Silicon Schottky Barrier Diode for Detector, Mixer REJ03G0602-0100 Previous: ADE-208-1386 Rev.1.00 Apr 26, 2005 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Lead Package (SFP) is suitable for surface mount design.


    Original     		PDF HSD88 REJ03G0602-0100 ADE-208-1386) HSD88 PUSF0002ZB-A

    HSD882

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2005.08.15 Page No. : 1/5 MICROELECTRONICS CORP. HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HE6004 HSD882 HSD882 O-126ML 183oC 217oC 260oC

    HSD882S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2005.01.04 Page No. : 1/5 MICROELECTRONICS CORP. HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.


    Original     		PDF HE6544 HSD882S HSD882S 183oC 217oC 260oC

    transistor tl 187

    Abstract: transistor D 882 p HSD882 IC tl 074
    Text: HI-SINCERITY Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2005.01.06 Page No. : 1/5 MICROELECTRONICS CORP. HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HE6004 HSD882 HSD882 O-126ML 183oC 217oC 260oC transistor tl 187 transistor D 882 p IC tl 074

    HSD882S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/5 MICROELECTRONICS CORP. HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay


    Original     		PDF HE6544 HSD882S HSD882S 150oC 200oC 183oC 217oC 260oC 245oC 10sec

    HSD882S

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2003.08.12 Page No. : 1/4 HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.


    Original     		PDF HE6544 HSD882S HSD882S

    HSD880

    Abstract: SD880
    Text: HI-SINCERITY Spec. No. : HE6729 Issued Date : 1992.11.25 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD880 is designed for low frequency power amplifier applications. TO-220 Features


    Original     		PDF HE6729 HSD880 HSD880 O-220 183oC 217oC 260oC SD880

    O125C

    Abstract: HSD882
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2002.01.25 Page No. : 1/4 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HE6004 HSD882 HSD882 O-126ML O125C

    HSD882

    Abstract: O125C
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2003.09.10 Page No. : 1/4 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HE6004 HSD882 HSD882 O-126ML O125C

    HSD880

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6729-B Issued Date : 1992.11.25 Revised Date : 1999.08.01 Page No. : 1/3 HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD880 is designed for low frequency power amplifier applications. Features • High DC Current Gain


    Original     		PDF HE6729-B HSD880 HSD880

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    HSD88

    Abstract: PUSF0002ZB-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d5-900 Unit2607 HSD88 PUSF0002ZB-A

    mn2510

    Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
    Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @


    Original     		PDF OT-223 STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"

    B55QS03

    Abstract: it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600
    Text: 5 D C B 1 Cover Page 2 Block Diagram 3 Clock Generator 4 Power CPU Vcore , Intersil 6566(DCR Sense) 5 Power A(DC to DC) 6 Power B(DC to DC),PWR sequence&good 7 K8 - M2 CPU (HT) D 8 K8 - M2 CPU (MEM) A 9 K8 - M2 CPU (CTRL) B,C 10 K8 - M2 CPU (POWER,GND) E,F,G,H


    Original     		PDF RS485 ITE8282 RT9218 PCIEX16 RS485M-M B55QS03 it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600

    r61505

    Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
    Text: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials


    Original     		PDF REJ13G0001-1900 r61505 R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ

    HSD88

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


    Original     		PDF 2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    Ample Communications

    Abstract: HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0027-0100/Rev Ample Communications HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF