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    HP4936DYT Search Results

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    HP4936DYT Price and Stock

    Rochester Electronics LLC HP4936DYT

    MOSFET 2N-CH 30V 5.8A 8SOIC
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    DigiKey HP4936DYT Bulk 2,500 1,110
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    Renesas Electronics Corporation HP4936DYT

    - Tape and Reel (Alt: HP4936DYT)
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    Avnet Americas HP4936DYT Reel 4 Weeks 1,336
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    Harris Semiconductor HP4936DYT

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    Bristol Electronics HP4936DYT 2,337
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    Rochester Electronics HP4936DYT 2,500 1
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    HP4936DYT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HP4936DYT Fairchild Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET Original PDF
    HP4936DYT Intersil MOSFET, Enhancement, N Channel, 30V, 8-Pin Original PDF

    HP4936DYT Datasheets Context Search

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    HP4936DY

    Abstract: HP4936DYT TB334
    Text: HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HP4936DY HP4936DY HP4936DYT TB334

    Untitled

    Abstract: No abstract text available
    Text: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount


    Original     		PDF HP4936DY

    4469 mosfet

    Abstract: HP4936DY HP4936DYT TB334
    Text: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount


    Original     		PDF HP4936DY TB334, 4469 mosfet HP4936DY HP4936DYT TB334

    Untitled

    Abstract: No abstract text available
    Text: HP4936DY Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HP4936DY HP4936DY MS-012AA 330mm EIA-481

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS X HP4936DY Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the


    OCR Scan     		PDF HP4936DY MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: interrii HP4936DY D ata S hee t A u g u st 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET F ile N u m b e r Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the


    OCR Scan     		PDF HP4936DY HP4936DY