HN3C17FU Search Results

HN3C17FU Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
HN3C17FU		Toshiba	Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications		Scan	PDF
HN3C17FU		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF

HN3C17FU Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	PDF	HN3C17FU 16GHz
HN3C17FU Abstract: No abstract text available Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU HN3C17 16GHz HN3C17FU
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	PDF	HN3C17FU 16GHz
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : \|S2 l e\|2= 9.0dB (f=2GHz) 2.1 +0.1 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU 16GHz S21el2
HN3C17FU Abstract: No abstract text available Text: TO SH IBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU N3C17 16GHz HN3C17FU
Silicon NPN Epitaxial Planar Type Abstract: No abstract text available Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : \|S2l e\|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	HN3C17FU HN3C17 16GHz Silicon NPN Epitaxial Planar Type