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    HN3C15F Search Results

    HN3C15F Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C15F Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C15F Toshiba RF 2-in-1 Hybrid Transistors Scan PDF
    HN3C15FU Unknown NPN Transistor Scan PDF
    HN3C15FU Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    HN3C15FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C15FU(TE85L) Toshiba TRANS GP BJT NPN 7V 0.04A 6(2-2J1A) T/R Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C15FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC


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    PDF HN3C15FU

    Untitled

    Abstract: No abstract text available
    Text: HN3C15FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF HN3C15FU

    HN3C15FU

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C15FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    PDF HN3C15FU HN3C15FU

    HN3C15FU

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE HN3C15FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C15FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)


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    PDF HN3C15FU HN3C15FU

    HN3C15F

    Abstract: No abstract text available
    Text: HN3C15F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 15F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING 6 5 4 Fl F» FI- Type Name


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    PDF HN3C15F HN3C15F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF HN3C15FU

    HN3C15FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 i 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


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    PDF HN3C15FU N3C15 HN3C15FU